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A curved focal plane detector with electrodes prepared by ion implantation and its preparation method

A focal plane detector and ion implantation technology, applied in electrical radiation detectors and other directions, can solve problems such as poor compatibility of integrated circuit manufacturing processes, affecting yield, contaminating equipment, etc., to save process steps, improve productivity and improve efficiency , the effect of increasing the area

Active Publication Date: 2019-03-19
YANTAI RAYTRON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Vanadium oxide is generally used as the heat-sensitive film now, but the compatibility between the vanadium oxide heat-sensitive film and the integrated circuit manufacturing process is not good. The factory is worried that the vanadium oxide material and the vanadium material will contaminate the equipment, so the equipment after the vanadium oxide process needs to be configured separately and isolated to prevent contamination of other products and process equipment
[0006] In addition, in the prior art, metal electrodes are generally deposited and electrically connected to the heat-sensitive layer film, and the temperature change felt by the heat-sensitive layer is transmitted to the readout circuit of the base. chemical treatment, the process is cumbersome, the production capacity is low, and wastes resources, and no matter whether the heat-sensitive film is deposited first, and then the electrode is deposited, or the electrode is deposited first, and then the heat-sensitive film is deposited, the two are not on the same plane, and there is one more plane. It has more impact on flatness. The more process steps, the more defects may be brought, which will affect the yield.

Method used

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  • A curved focal plane detector with electrodes prepared by ion implantation and its preparation method
  • A curved focal plane detector with electrodes prepared by ion implantation and its preparation method
  • A curved focal plane detector with electrodes prepared by ion implantation and its preparation method

Examples

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Effect test

Embodiment 1

[0066] The preparation method of the curved surface focal plane detector of ion implantation preparation electrode comprises the following steps:

[0067] Step 1: Fabricate a metal reflective layer 2 on a semiconductor base 1 containing a readout circuit, and perform patterning on the metal reflective layer 2, and the patterned metal reflective layer 2 forms several metal blocks 2-1; the metal Block 2-1 is electrically connected to the readout circuit on the semiconductor base 1; then, an insulating dielectric layer 3 is deposited on the patterned metal reflective layer 2, such as figure 1 Shown; the thickness of metal reflective layer 2 is The metal reflective layer 2 has a reflectivity of more than 99% for infrared light with a wavelength of 8-14 μm, and the insulating medium layer 3 is a silicon nitride film or a silicon oxide film with a thickness of

[0068] Step 2: Deposit a sacrificial layer 4 on the insulating dielectric layer 3, and pattern the sacrificial layer...

Embodiment 2

[0077] The difference from Example 1 is that in step 9, the detector is first bent and shaped, and then its structure is released. The specific method is as follows: use a circular ring or cylinder 18 with a uniform force on the detector with a back film Fixed, use a flexible round head rod to squeeze the surface of the detector on the front, such as Figure 15 As shown; the radius of the round head of the round head mandrel 19 can be from 3mm to ∞, so that the detector forms a curved surface; then, the method of baking is used to keep the curved surface with a fixed curvature so that it does not return to a flat state, and finally, carry out Structure release, removing the sacrificial layer to form a microbridge structure, such as Figure 12 as shown, Figure 12 Only the shape of the curved focal plane detector is given in , and the internal structure is also deformed by bending. Figure 12 not shown in.

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Abstract

The invention relates to a curved focal plane detector for electrodes prepared by ion implantation. The detector is a curved surface with a radius of curvature not less than 3 mm and a thickness not exceeding 50 μm, and its electrode layer and thermal sensitive layer are both titanium oxide films. The flatness is high, and it can be applied to a large field of view or a super large field of view, and a super large area array high-resolution imaging; it also involves the preparation method of the above-mentioned detector, preparing a titanium oxide film on the support layer, and covering the area of ​​the bridge surface with photoresist Titanium oxide film, ion implantation is carried out on the titanium oxide film at the bridge leg, the titanium oxide film in the bridge area is a semiconductor titanium oxide film, which is equivalent to a heat-sensitive layer; the titanium oxide film in the bridge leg area is a conductive titanium oxide film; it also includes The steps of thinning the detector to less than 50 μm and bending and shaping it; can always keep the light focus on the focal plane detector, thus ensuring the maximum imaging effect, suitable for large or super large field of view, super large Area array high resolution imaging.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical system process manufacturing in semiconductor technology, and in particular relates to a curved-surface focal plane detector for preparing electrodes by ion implantation and a preparation method thereof. Background technique [0002] With people's research on electromagnetic waves in various bands, since the 21st century, terahertz imaging technology has gradually entered people's sight. Terahertz has a high frequency and a short wavelength. It has a high signal-to-noise ratio in the time-domain spectrum, and has little transmission loss in dense smoke and dust environments. It can scan the interior of the house through walls. Compared with X-ray scanners that are expensive, have a short range of action, and cannot identify specific explosives, terahertz imaging has unique advantages. It has been initially used in security fields such as checking mail, identifying explosives, and non-destru...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/20
CPCG01J5/20
Inventor 王宏臣杨鑫王鹏陈文礼甘先锋董珊孙丰沛
Owner YANTAI RAYTRON TECH