Preparation and application of ferrite magnet/pucherite composite material

A technology of composite materials and precursor films, applied in electrolytic coatings, electrodes, electrophoretic plating, etc., can solve problems such as thickness and uniformity quality influence, film thickness, unevenness, etc.

Active Publication Date: 2017-08-29
NORTHWEST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the prepared film is relatively thick and non-uniform, and the thickness and uniformity are also significant factors affecting the quality of the film

Method used

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  • Preparation and application of ferrite magnet/pucherite composite material
  • Preparation and application of ferrite magnet/pucherite composite material
  • Preparation and application of ferrite magnet/pucherite composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1, NiFe 2 o 4 / BiVO 4 preparation of

[0033] (1) Preparation of Bi precursor film: The electrolyte was composed of 100mL ethylene glycol and 50mL containing 0.01mol Bi(NO 3 ) 3 ·5H 2 O, 0.03mol Zn (NO 3 ) 2 ·6H 2 O's distilled water composition. Using 1 × 2.5 cm F-doped SnO 2 Coated glass (FTO) conductive substance was used as working electrode, Ag / AgCl (3.5M) was used as reference electrode, and platinum sheet was used as counter electrode. After electrodeposition by chronoamperometry (i-t) at a constant potential of −0.6 V at a scan rate of 50 mV / s for 200 s, the Bi precursor film was completely washed with absolute ethanol and dried in ambient air.

[0034] (2) Leaf structure BiVO 4 Preparation of the film: 0.1 mL of 0.2 mol / L VO(acac)2 in DMSO solution was dropped onto the Bi precursor film prepared above using a syringe, and heated to 450 °C in air (heating rate was 2 °C / min) , sintered for 2 hours; naturally cooled to room temperature and ...

Embodiment 2

[0038] Example 2, CoFe 2 o 4 / BiVO 4 preparation of

[0039] (1) Preparation of Bi precursor film: same as Example 1;

[0040] (2) Leaf structure BiVO 4 The preparation of membrane: with embodiment 1;

[0041] (3) CoFe 2 o 4 Preparation: Co(CH 3 COO) 2 4H 2 O and Fe 2 o 3 Mix in a mortar with a molar ratio of 1:2~3:2, add a small amount of absolute ethanol, grind back and forth continuously for 30~40 minutes, package the mixture in porcelain, and heat at 700~800°C for 6~8 Hours, the remaining product was collected and ground into powder to obtain CoFe 2 o 4 ;

[0042] (4) CoFe 2 o 4 / BiVO 4 Preparation: 20~40mg NiFe 2 o 4 Powder added to contain 5~10mgI 2 50mL of acetone solution, ultrasonic dispersion for 40 minutes to obtain a suspension; BiVO 4 The electrode membrane was inserted into the suspension and connected to the negative pole of the DC power supply, with the FTO glass parallel to the BiVO 4 The electrode is inserted into the suspension and conn...

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PUM

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Abstract

The invention provides preparation of an MFe2O4/BiVO4 composite material with good PEC performance. The preparation comprises the steps of firstly adopting Zn<2+> as a structure-directing agent and preparing BiVO4 of a tree leaf structure in a high-concentration electrolyte; successfully loading magnetic NiFe2O4 and CoFe2O4 nano particles into the surface of the BiVO4 of the tree leaf structure through combination of chemical deposition, heating treatment and electrophoretic deposition technologies; and building n-n and p-n junctions through electrophoretic deposition, wherein the formed NiFe2O4/BiVO4 and CoFe2O4/BiVO4 composite material has the tree leaf structure, recombination of photo-induced carriers is effectively inhibited by the structure and separation of electrons and holes is accelerated, so that the MFe2O4/BiVO4 composite material has excellent PEC activity, is used for hydrogen evolution reaction as a photoanode, and has excellent hydrogen generation performance.

Description

technical field [0001] The present invention relates to a BiVO 4 matrix composites, especially a MFe 2 o 4 / BiVO 4 The preparation method of (M = Ni, Co) composite material is mainly used as a photoanode for hydrogen evolution reaction. Background technique [0002] With increasing resource shortages, hydrogen energy is receiving widespread attention. Photoelectrochemical (PEC) cells have been uncovered as one of the highest profile routes to generate hydrogen. Many semiconductor materials as photoanodes have been widely used in PEC hydrogen production, such as TiO 2 , WO 3 , Fe 2 o 3 Wait. Among many semiconductor materials, as an n-type semiconductor with a narrow energy gap (Eg = 2.4~2.5eV), BiVO 4 The photoanode is able to oxidize water due to its strong absorption of visible light, tunable electronic structure, low and good stability, and suitable valence band edge (2.4 V vs. NEH). But since BiVO 4 The conduction band position is closer to 0 V than NHE, whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04C25D13/02
CPCC25B1/04C25D13/02C25B1/55C25B11/091Y02E60/36Y02P20/133
Inventor 王其召李媛和继娟白燕苏碧桃佘厚德牛腾娇
Owner NORTHWEST NORMAL UNIVERSITY
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