A method for preparing flexible and transparent graphene/silicon metal-semiconductor-metal photodetectors

Abstract

The invention discloses a method for fabricating a flexible and transparent graphene / metal silicon-semiconductor-metal photoelectric detector. The method comprises the steps of etching a silicon thin film of an SOI silicon substrate to a silicon strip; photoetching a gold electrode pattern on an upper surface of a silicon dioxide isolation layer of the SOI silicon substrate, and plating gold electrodes; fabricating a single-crystal graphene thin film; covering the single-crystal graphene thin film on the silicon dioxide isolation layer, the silicon strip and the upper surfaces of the gold electrodes; patterning the single-crystal graphene thin film to form an interdigital shape; and covering a PC thin film on an upper surface of the patterned device, scraping the PC film at an edge, and placing the device in a BOE etching liquid to etch the silicon substrate. By the photoelectric detector, board spectrum detection can be performed, the problem of low response of a traditional silicon-based PIN junction on ultraviolet light detection is solved, and a photon-generated carrier and a silicon lattice are collided and ionized to acquire high gain. The photoelectric detector is simple in fabrication process and low in cost, has the characteristics of high responsivity, fast response speed, large internal gain and small switching ratio, and is easy to integrate.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, relates to the structure of a photoelectric detection device, in particular to a method for preparing a flexible and transparent graphene / silicon metal-semiconductor-metal photodetector Background technique [0002] Good electrical conductivity, high optical transparency and good mechanical flexibility make graphene a promising application prospect for the next generation of flexible electronic devices. Among them, graphene is combined with a semiconductor to form a Schottky junction, which can be applied in the fields of electronics and optoelectronics. While organic semiconductors are inherently flexible, graphene-semiconductor Schottky junctions are ideal for flexible electronics. However, major issues such as poor stability, non-repeatable response, and poor device performance, especially compared with silicon-based devices, limit their wider applications. Furthermore, organ...

AI Technical Summary

Problems solved by technology

However, the stiffness of bulk silicon crystals limits its application in the field of flexible photodetectors, especially flexible detection electronics.

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