Unlock instant, AI-driven research and patent intelligence for your innovation.

GeSe two-dimensional layer semiconductor, saturable absorber device formed by GeSe two-dimensional layer semiconductor and application thereof

A two-dimensional layered, semiconductor technology, applied in the field of nonlinear optical materials and devices, can solve problems such as application limitations of multi-atomic layer graphene, and achieve the effect of being suitable for mass production, low saturation absorption threshold, and cost reduction

Inactive Publication Date: 2017-09-26
ZHEJIANG UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the characteristics of graphene saturable absorbers depend on the unique Dirac band structure of single-atom-thick graphene. As the number of atomic layers increases, the carrier mobility decreases sharply, and the properties such as energy band structure and light absorption characteristics change greatly. , so that the application of multi-atomic layer graphene is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GeSe two-dimensional layer semiconductor, saturable absorber device formed by GeSe two-dimensional layer semiconductor and application thereof
  • GeSe two-dimensional layer semiconductor, saturable absorber device formed by GeSe two-dimensional layer semiconductor and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Add 0.04 g of GeSe block into 40 ml of ethanol solution, ultrasonically break it for 1 hour, take the broken dispersion and centrifuge it, wash it twice with deionized water to obtain a GeSe two-dimensional layered semiconductor, and finally disperse it in 0.4 ml of deionized in the water. The GeSe two-dimensional layered semiconductor is detected by atomic force microscopy (AFM), and its layer number is 2-8 layers.

[0037] (2) Disperse 0.05g of polyvinyl alcohol (PVA) powder in 1ml of deionized water, stir at 85°C for 2h until it is colorless and transparent.

[0038] (3) Mix 0.4ml GeSe two-dimensional layered semiconductor aqueous solution with 1ml PVA aqueous solution evenly, pour it into a watch glass with a smooth surface, and place it horizontally in a drying oven to dry for 5 hours to obtain a flat and dry PVA film.

[0039] (4) Select the part with uniform thickness as a saturable absorber device. Using femtosecond laser (130fs, 800nm, 1KHz) to study its ...

Embodiment 2

[0041] (1) Add 0.04 g of GeSe blocks into 40 ml of ethanol solution, ultrasonically crush for 1 h, and centrifuge the broken dispersion to obtain a GeSe two-dimensional layered semiconductor, which is finally dispersed in 0.4 ml of ethanol. The GeSe two-dimensional layered semiconductor is detected by atomic force microscopy (AFM), and its layer number is 2-8 layers.

[0042] (2) Disperse 0.2g of polymethyl methacrylate (PMMA) powder in 4ml of N,N-dimethylformamide (DMF), and stir at 70°C for 2h until colorless and transparent.

[0043] (3) Mix 0.4ml GeSe two-dimensional layered semiconductor ethanol solution with 4ml PMMA DMF solution evenly, pour it into a watch glass with a smooth surface, and place it horizontally in a drying oven to dry for 5h to obtain a flat and dry PMMA film.

[0044] (4) Select the part with uniform thickness as a saturable absorber device. Using femtosecond laser (130fs, 800nm, 1KHz) to study its saturable absorption characteristics by Z-scan techno...

Embodiment 3

[0046] (1) Add 0.04 g of GeSe blocks into 40 ml of N-methylpyrrolidone (NMP) solution, ultrasonically crush for 1 h, take the broken dispersion, centrifuge, and wash twice with deionized water to obtain a GeSe two-dimensional layered semiconductor, Finally dispersed in 0.4ml deionized water. The GeSe two-dimensional layered semiconductor is detected by atomic force microscopy (AFM), and its layer number is 2-8 layers.

[0047] (2) Disperse 0.05g of polyvinyl alcohol (PVA) powder in 1ml of deionized water, stir at 85°C for 2h until it is colorless and transparent.

[0048] (3) Mix 0.4ml GeSe two-dimensional layered semiconductor aqueous solution with 4ml PVA aqueous solution evenly, pour it into a watch glass with a smooth surface, and place it horizontally in a drying oven to dry for 5 hours to obtain a flat and dry PVA film.

[0049] (4) Select the part with uniform thickness as a saturable absorber device. Using femtosecond laser (130fs, 800nm, 1KHz) to study its saturable a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a GeSe two-dimensional layer semiconductor, a saturable absorber device formed by the GeSe two-dimensional layer semiconductor and an application thereof. The saturable absorber device comprises a two-dimensional layer semiconductor packaged in a transparent container and taken as a saturable absorber and a matrix bearing the saturable absorber, and the saturable absorber is a GeSe two-dimensional layer semiconductor. New materials having excellent saturated absorption features are discovered to provide a new idea for development of a novel saturable absorber, the device is simple in preparation, is suitable for large-scale production, is small in size, can form various types of mode-locking devices, and is applied to the fields such as pulse optical fiber laser and the like.

Description

technical field [0001] The invention relates to nonlinear optical materials and devices, in particular to a GeSe two-dimensional layered semiconductor and a saturable absorber device and application thereof, which can be used for mode-locking, Q-switching, and laser beam shaping of fiber lasers. Background technique [0002] Lasers are divided into continuous lasers and pulsed lasers in operation. Pulse laser refers to a laser with a single laser pulse width less than 0.25 seconds and only works once at a certain interval. It has a large output power and is suitable for laser marking, cutting, and distance measurement. Common pulsed lasers include yttrium aluminum garnet (YAG) lasers, ruby ​​lasers, neodymium glass lasers, etc. in solid-state lasers, as well as nitrogen molecular lasers, excimer lasers, etc. Q-switching and mode-locking are the two most common techniques for obtaining pulsed lasers. With the continuous development of Q-switching and mode-locking technology...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/11
CPCH01S3/1118H01S3/1115
Inventor 叶羽婷刘小峰邱建荣
Owner ZHEJIANG UNIV