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Electro-optic modulator with low bias voltage and large bandwidth

An electro-optic modulator and electro-optic modulation technology, which is applied in the field of optical communication, can solve problems such as single performance indicators, and achieve the effects of simple design, small device size, and simple process

Pending Publication Date: 2017-10-10
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there have been some reports on silicon-based electro-optic polymer material modulators, they are still only a breakthrough in a single performance index (modulation rate / bandwidth, operating voltage, device size), and there are still many deficiencies in comprehensive performance. Therefore, silicon-based Electro-optic modulators with large modulation bandwidth, low operating voltage, high modulation efficiency, low operating energy consumption and small device size are still a challenge

Method used

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  • Electro-optic modulator with low bias voltage and large bandwidth
  • Electro-optic modulator with low bias voltage and large bandwidth
  • Electro-optic modulator with low bias voltage and large bandwidth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Such as figure 1 As shown, the high-speed electro-optic phase modulator using electro-optic modulation waveguide, the left side of the input waveguide 1 is used as the input port, the right side of the output waveguide 8 is the output port, and the applied voltage between the first modulation electrode 5a and the second modulation electrode 5b has two kinds of V Off and V on , so that the device in this embodiment corresponds to two working states Off and On.

[0084] In this embodiment, the cladding structure adopts such as Figure 5 As shown, the modulation electrode arrangement is adopted as Figure 14 As shown, the upper cladding adopts an electro-optic material with an electro-optic coefficient of 192pm / V.

[0085] Light is input from the left side of the input waveguide 1, and enters the electro-optic modulation waveguide 4 from the left side:

[0086] When the working state is Off, the voltage between the first modulation electrode 5a and the second modulatio...

Embodiment 2

[0104] Such as figure 2 As shown, the Mach-Zehnder electro-optical intensity modulator using electro-optic modulation waveguides, the left side of the input waveguide 1 is the input port, and the right side of the output waveguide 8 is the output port. There are two kinds of voltages V applied between the first modulation electrode 5a and the second modulation electrode 5b Off1 and V on1 , so that the device in this embodiment corresponds to two working states Off and On. There are two kinds of voltages V applied between the third modulation electrode 5c and the second modulation electrode 5b Off2 and V on2 , so that the device in this embodiment corresponds to two working states Off and On.

[0105] In this embodiment, the cladding structure adopts such as Figure 5 As shown, the modulation electrode arrangement is adopted as Figure 14 As shown, the upper cladding adopts an electro-optic material with an electro-optic coefficient of 192pm / V.

[0106] The light is inp...

Embodiment 3

[0119] Such as image 3 As shown, the electro-optic modulation waveguide microring resonant cavity electro-optic intensity modulator is used, the left side of the input waveguide 1 is the input port, the right side of the output band 5 is the input port, and the input light is single-wavelength light with a wavelength of λ. There are two kinds of voltages V applied between the first modulation electrode 5a and the second modulation electrode 5b Off and V on , so that the device in this embodiment corresponds to two working states Off and On.

[0120] In this embodiment, the cladding structure adopts such as Figure 5 As shown, the modulation electrode arrangement is adopted as Figure 14 As shown, the upper cladding adopts an electro-optic material with an electro-optic coefficient of 192pm / V.

[0121] Light is input from the left side of the input waveguide 1, and passes through the coupling area composed of the first coupling waveguide 9a and the second coupling waveguid...

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Abstract

The invention discloses an electro-optic modulator with low bias voltage and large bandwidth. The electro-optic modulator is a modulator provided with electro-optic modulating waveguides such as a phase modulator, an electro-optic intensity modulator of Mach-Zehnder type and an electro-optic intensity modulator of micro-ring resonator type. Phase modulation or light intensity modulation can be achieved by making an electric field applied to the electro-optic modulating waveguide with a modulating electrode. The modulating electrode is electrically connected with the electro-optic modulating waveguide. The electro-optic modulating waveguide is a waveguide structure which is formed along the transmission direction with the same periodicity or change periods in an alternate arrangement mode. The electro-optic modulator with low bias voltage and large bandwidth can be utilized for the electro-optic phase modulation and the electro-optic intensity modulation in an optical communication system, and has the advantages of being large in modulation bandwidth, low in working voltage, high in modulation efficiency, low in working energy consumption, small in size of devices, simple in structure, simple in design and simple in process.

Description

technical field [0001] The invention belongs to the technical field of optical communication, and in particular relates to an electro-optical modulator with low bias voltage and large bandwidth based on an electro-optical modulation waveguide, which is suitable for modulating the phase and intensity of light in an optical communication system. Background technique [0002] In the 21st century, human society has entered the information age. The rapid development of Internet technology has triggered a new technological revolution, and the demand for communication capacity has grown exponentially. With its advantages of high bandwidth, low crosstalk, anti-interference, and low loss, optical communication technology has become the mainstream technology of current communication. As the core device in optical communication technology, optoelectronic devices have difficulty in meeting the growing demand for ultra-high-speed transmission, and have gradually become the bottleneck for...

Claims

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Application Information

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IPC IPC(8): G02F1/065
CPCG02F1/065
Inventor 戴道锌吴昊
Owner ZHEJIANG UNIV