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Preparation method for hydrogen-contained and aluminum-doped type diamond film

A diamond film and substrate technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as the inability to guarantee the doping content of diamond-like carbon films, the inability to sputter Al atoms, and health hazards.

Inactive Publication Date: 2017-10-20
GUANGDONG INST OF NEW MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a DC power supply is used to control the magnetron sputtering aluminum target combined with the ion source to prepare the aluminum-doped hydrogen-containing diamond-like film, in the conventional DC sputtering mode, the surface of the aluminum target will be generated due to the non-conductive particles attached during the deposition process. However, the magnetron sputtering method using radio frequency power source has low deposition efficiency and radio frequency power source Health hazards of equipment to operators

Method used

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  • Preparation method for hydrogen-contained and aluminum-doped type diamond film

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Effect test

Embodiment 1

[0014] 1. After degreasing and drying the mold steel sheet, fix it on the sample turret in the vacuum chamber, and then pump the background vacuum to 2.5×10 -3 Pa;

[0015] 2. Put argon gas into the ion source, turn on the ion source power supply and adjust its current to 1.0A, keep the pressure in the furnace at 0.3Pa, turn on the substrate pulse bias power supply and gradually increase it to -700V, and perform ion bombardment cleaning on the surface of the sample 20 minutes;

[0016] 3. Turn on the intermediate frequency power supply of the aluminum target, adjust its current to 1.0A, pass methane gas (30sccm) and argon gas (80sccm) into the ion source, keep the ion source current at 1.0A, and keep the substrate bias at -100V, and work The gas pressure was 0.35 Pa, and the hydrogen-containing aluminum-doped diamond-like carbon film was deposited for 60 minutes; after the deposition, the target and bias power were turned off and the vacuum was maintained, and the sample was ...

Embodiment 2

[0018] 1. After the stainless steel sheet is cleaned and dried with ultrasonic assistance in acetone, it is fixed on the sample turntable in the vacuum chamber, and the background vacuum is pumped to 3.0×10 -3 Pa;

[0019] 2. Put argon gas into the ion source, turn on the ion source power supply so that the current is 1.5A, keep the pressure in the furnace at 0.4Pa, turn on the substrate pulse bias power supply and gradually increase it to -800V, and perform ion bombardment cleaning on the surface of the sample for 30 minute;

[0020] 3. Then feed methane gas with a flow rate of 50sccm and argon gas with a flow rate of 100sccm into the ion source, adjust the aluminum target current to 2.0A, the substrate bias voltage to -150V, and the working pressure to 0.44Pa to deposit hydrogen-containing aluminum-doped diamond-like carbon films 120 minutes; after the deposition, turn off the target and bias power supply, keep the vacuum, and after the sample cools down to room temperature...

Embodiment 3

[0022] 1. After cleaning and drying the hard alloy steel sheet with ultrasonic assistance in acetone, fix it on the sample turret in the vacuum chamber, and pump the background vacuum to 3.0×10 -3 Pa;

[0023] 2. Put high-purity argon gas into the ion source, turn on the ion source power supply and adjust its current to 1.5A, keep the pressure in the furnace at 0.4Pa, turn on the substrate pulse bias power supply and gradually increase it to -800V, and perform ionization on the surface of the sample. Activation by bombardment for 30 minutes;

[0024] 3. After ion cleaning, flow 60sccm acetylene gas and 120sccm argon gas into the ion source, and adjust the aluminum target current to 3.0A, the substrate bias voltage to -200V, the ion source current to 1.5A, and the working pressure to 0.5 Pa, deposit hydrogen-containing Al-doped diamond-like carbon film for 240 minutes; after the deposition, turn off the target and bias power, keep the vacuum, and take out the sample after cool...

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Abstract

The invention discloses a preparation method for a hydrogen-contained and aluminum-doped type diamond film. According to the preparation method, a technology for utilizing a twin aluminum target composite anode laminar flow type ion source to ionize methane or acetylene gas by combining intermediate frequency magnetron sputtering is adopted, the hydrogen-contained and aluminum-doped type diamond film is deposited on the surface of a substrate so that low-temperature, large-area and long-time deposition can be realized, and the method has the characteristics of being simple in equipment, low in production cost, high in efficiency and capable of being used for anti-friction and anti-wear protection for the surfaces of various parts. The invention provides the preparation method for the hydrogen-contained and aluminum-doped type diamond film. The method has the advantages that deposition can be realized rapidly and stably, the bonding strength of the film and the substrate is high, the friction coefficient is low, and the wear rate is low.

Description

technical field [0001] The invention relates to a method for preparing a diamond-like film, in particular to a method for preparing a hydrogen-containing aluminum-doped diamond-like film. Background technique [0002] Diamond-like carbon film is a kind of metastable amorphous material mainly composed of carbon atoms. It has high hardness and high elastic modulus, excellent anti-friction and wear resistance, good optical transparency, high thermal conductivity and excellent With a series of excellent properties such as chemical inertness and biocompatibility, it has broad application prospects in many fields such as automobiles, microelectronics, optical films, biomedical protection, and decoration. However, due to the constraints of film deposition technology, diamond-like carbon films generally have defects with extremely large internal stress, and the internal stress can even be as high as 10GPa, which not only leads to poor bonding strength between the film and the substr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
CPCC23C14/0605C23C14/345C23C14/35
Inventor 林松盛许伟代明江周克崧石倩侯惠君韦春贝李洪赵凤丽苏一凡
Owner GUANGDONG INST OF NEW MATERIALS
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