A trench junction barrier Schottky diode and its manufacturing method

Abstract

The present invention provides a trench junction barrier Schottky diode and a manufacturing method thereof. The method comprises: the step 1, providing a substrate configured to manufacture a device, wherein an epitaxial layer is grown at the right side of the substrate; the step 2, manufacturing a field limiting ring area and a preparation main junction area on the epitaxial layer, wherein the preparation main junction area is configured to provide first ion implantation; the step 3, etching a junction barrier groove on the epitaxial layer except the field limiting ring area, wherein the main junction groove is etched at the preparation main junction area, and the junction barrier groove and the junction groove are subjected to second ion implantation; the step 4, manufacturing ohmic contact at the back of the substrate; the step 5, manufacturing a passivation layer and Schottky contact at the right side of the device; and the step 6, manufacturing a metal electrode at the right side of the device and performing passivation. The present invention further provides a trench junction barrier Schottky diode. The trench junction barrier Schottky diode and the manufacturing method thereof can reduce the main junction electric field aggregation effect while effectively shielding the Schottky surface electric field, vertically increase the main junction area and improve the pressure-resisting features.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a trench junction barrier Schottky diode and a manufacturing method thereof. Background technique [0002] Modern technology has continuously put forward higher requirements for the volume, reliability, withstand voltage and power consumption of semiconductor power devices. With the shrinking of the transistor feature size, due to the short channel effect and other physical laws and the limitation of production cost, the mainstream silicon-based materials and CMOS technology are developing to the 10nm process node and it is difficult to continue to improve. Silicon carbide has a larger band gap than silicon, and has a higher doping concentration and a smaller epitaxial layer thickness than silicon power devices of the same withstand voltage level, so the forward conduction resistance can be greatly reduced and the power loss is large At the same time, silicon carbi...

AI Technical Summary

Problems solved by technology

[0006] The trench junction barrier Schottky diode and its manufacturing method provided by the present invention can solve the problem that the traditional main junction structure is easy to cause electric field accumulation in the prior art, and effectively eliminate the problem that the main junction is prone to electric field breakdown

Images