High-purity gallium electrolysis device and method

An electrolysis device and high-purity technology, applied in the field of electrolysis, can solve the problems of ineffective separation of impurities, simplified operation process, low gallium impurity content, etc., and achieve convenient centralized collection and reprocessing purification, high purity, and good removal effect. Effect

Pending Publication Date: 2017-11-10
JIANGXI DEYI SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the following problems still exist in the preparation method of high-purity gallium in this invention patent using electrolysis-crystallization combination: 1. After obtaining electrolytic gallium in the cathode area, it needs to be taken out and placed in a crystallization tank for crystallization, which is not conducive to simplifying the operation process; 2. Electrolytic gallium cannot be effectively separated from raw gallium and impurities, resulting in low gallium impurity content and high product qualification rate

Method used

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  • High-purity gallium electrolysis device and method

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Effect test

Embodiment 1

[0025] Such as figure 1 As shown, a kind of high-purity gallium electrolysis device of the present embodiment comprises an electrolytic cell 1, a cathode plate 2 and an anode plate 3, an anode area and a cathode area are separated by a separator 4 in the electrolytic cell 1, and different The raw material gallium 5 that does not pass through the separator 4, the anode plate 3 is placed in the anode area, and the cathode plate 2 is placed in the cathode area. Circulating cooling device, the electrolytic cell 1 is equipped with an electrolyte 8 that has not crossed the separator 4.

[0026] Wherein, the raw material gallium 5 is 2N gallium. The shape of the cathode plate 2 is circular. The cooling water temperature in the circulating cooling device is 10°C. The electrolyte solution 8 is an aqueous sodium hydroxide solution. The temperature of the electrolytic solution 8 was 30°C.

[0027] A method according to the electrolytic device of the above-mentioned high-purity galli...

Embodiment 2

[0033] Such as figure 1 As shown, a kind of high-purity gallium electrolysis device of the present embodiment comprises an electrolytic cell 1, a cathode plate 2 and an anode plate 3, an anode area and a cathode area are separated by a separator 4 in the electrolytic cell 1, and different The raw material gallium 5 that does not pass through the separator 4, the anode plate 3 is placed in the anode area, and the cathode plate 2 is placed in the cathode area. Circulating cooling device, the electrolytic cell 1 is equipped with an electrolyte 8 that has not crossed the separator 4.

[0034] Wherein, the raw material gallium 5 is 3N gallium. The shape of the cathode plate 2 is square. The cooling water temperature in the circulating cooling device is 25°C. Electrolyte solution 8 is sodium metagallate aqueous solution. The temperature of the electrolytic solution 8 was 30°C.

[0035] A method according to the electrolytic device of the above-mentioned high-purity gallium, com...

Embodiment 3

[0041] Such as figure 1 As shown, a kind of high-purity gallium electrolysis device of the present embodiment comprises an electrolytic cell 1, a cathode plate 2 and an anode plate 3, an anode area and a cathode area are separated by a separator 4 in the electrolytic cell 1, and different The raw material gallium 5 that does not pass through the separator 4, the anode plate 3 is placed in the anode area, and the cathode plate 2 is placed in the cathode area. Circulating cooling device, the electrolytic cell 1 is equipped with an electrolyte 8 that has not crossed the separator 4.

[0042] Wherein, the raw material gallium 5 is 4N gallium. The shape of the cathode plate 2 is circular. The cooling water temperature in the circulating cooling device is 15°C. The electrolyte solution 8 is water. The temperature of the electrolytic solution 8 was 40°C.

[0043] A method according to the electrolytic device of the above-mentioned high-purity gallium, comprising the following st...

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Abstract

Disclosed is a high-purity gallium electrolysis device. The high-purity gallium electrolysis device comprises an electrolytic bath, a cathode plate and an anode plate. The interior of the electrolytic bath is divided by separating plates into an anode region and a cathode region. The anode region is filled with raw material gallium which does not exceed the separating plates. The anode plate is arranged in the anode region, and the cathode plate is arranged in the cathode region. The cathode plate comprises a hollow structure, and is externally connected with a circulating cooling device through a water inlet and a water outlet, wherein the water inlet and the water outlet are communicated with the hollow structure. The electrolytic bath is filled with an electrolyte which exceeds the separating plates. The electrolytic single crystal growth technology used by the high-purity gallium electrolysis device is easy and convenient to operate and low in cost, and the production efficiency is improved. The purity of the obtained single-crystal gallium is high, and the effect of removing impurities is good. Due to the fact that the separating plates are arranged, the raw material gallium and the electrolyte can be effectively separated, and centralized collection and reprocessing purification of electrolysis waste liquid generated by the anode region are facilitated.

Description

technical field [0001] The invention relates to the technical field of electrolysis, in particular to an electrolysis device and method for high-purity gallium. Background technique [0002] High-purity gallium is used to manufacture electronic devices such as gallium arsenide, gallium nitride, gallium phosphide and low-melting alloys, epitaxial wafers and optoelectronic devices, and is widely used in optoelectronic devices such as mobile communications, broadband optical fiber communications, personal computers, and communication satellites. field and microelectronics, the market demand is huge. [0003] The application of high-purity gallium will develop to a high level in depth and breadth. In terms of depth, gallium above 7N and 8N has a large space to display, such as microwave circuits and nanoelectronic devices, etc. are developing rapidly; in terms of breadth, it is mainly the application of 6N-level gallium, such as semiconductor lighting and LED fields, which are ...

Claims

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Application Information

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IPC IPC(8): C25C1/22C25C7/00C30B7/12C30B29/02
CPCC25C1/22C25C7/00C30B7/12C30B29/02Y02P10/20
Inventor 易德福守建川陈佳丽
Owner JIANGXI DEYI SEMICON TECH
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