A kind of manufacturing method of p-type double-sided crystal silicon battery

A technology for crystalline silicon cells and a manufacturing method, which is applied in the directions of circuits, electrical components, and final product manufacturing, etc., can solve the problems that crystalline silicon double-sided solar cells cannot be mass-produced, the double-sided diffusion process is cumbersome, and the production efficiency is low. Uniform sheet resistance, shortened diffusion time, and improved production efficiency

Inactive Publication Date: 2021-06-01
河北兆能新能源科技有限公司
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Problems solved by technology

The preparation of conventional P-type double-sided batteries requires a cumbersome double-sided diffusion process. During the second diffusion process on both sides, the surface of the first diffusion must be protected from contamination, and more operating processes are required to achieve the desired effect.
Due to the limitations of the process itself, crystalline silicon double-sided solar cells cannot be widely used in production
[0003] The Chinese patent application number "201310466393.0" discloses the manufacturing method of P-type double-sided solar cells, but the technical scheme diffusion process in this patent application adopts liquid diffusion source and tubular diffusion, and the production efficiency is low

Method used

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Embodiment Construction

[0023] A clear and complete description will be made below in conjunction with technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with specific embodiments.

[0025] The invention provides a method for manufacturing a P-type double-sided crystalline silicon battery, comprising the following steps:

[0026] A. Alkali texturing is carried out on both sides of the silicon wafer;

[0027] B. Print boron paste containing solid impurity boron oxide on the back...

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Abstract

The invention discloses a method for manufacturing a P-type double-sided crystalline silicon battery. Firstly, the silicon chip is made of double-sided texture by using the traditional texture-making process, and then the slurry printing process and the chain level are adopted with the solid impurity source as the main component. Diffusion process, followed by double-sided coating, double-sided printing of front silver electrodes and sintering. The process of preparing double-sided batteries by the method of the present invention is simpler than that of conventional double-sided batteries, especially the double-sided printing process and chain diffusion process, which ensures that different diffusion sources at the edge are not doped with each other, and at the same time reduces the leakage rate of the finished battery ; The diffusion time of the chain diffusion process is greatly shortened compared with the traditional tubular diffusion process, and the production efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a method for manufacturing a P-type double-sided crystal silicon cell. Background technique [0002] In order to improve the conversion efficiency of batteries, new double-sided batteries have emerged in recent years. The preparation of conventional P-type bifacial cells requires a cumbersome double-sided diffusion process. During the second diffusion process on both sides, the surface of the first diffusion must be protected from contamination, and more operating processes are required to achieve the desired effect. Due to the limitations of the process itself, crystalline silicon double-sided solar cells cannot be widely used in production. [0003] Chinese patent application number "201310466393.0" discloses a method for manufacturing P-type double-sided solar cells, but the diffusion process of the technical solution in this patent application adopts liquid dif...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/225H01L31/18
CPCH01L21/2252H01L31/1804Y02P70/50
Inventor 张东张大雨马立元杨雄磊
Owner 河北兆能新能源科技有限公司
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