Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing crystalline nanostructured Zinc Oxide transparent conductive film

A transparent conductive film and nanostructure technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve rare problems, achieve low turn-on voltage, increase extraction efficiency, and highly reliable performance.

Active Publication Date: 2017-11-24
SUN YAT SEN UNIV +1
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, there are many reports on the development of ZnO and ZnO-doped thin films of Al, Ga and In elements, but it is still relatively rare to apply to LEDs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing crystalline nanostructured Zinc Oxide transparent conductive film
  • Method for preparing crystalline nanostructured Zinc Oxide transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] Specifically, such as figure 1 As shown, the embodiment of the present invention provides a method for preparing a crystallized nanostructured zinc oxide transparent conductive film, which includes the following steps:

[0025] S1, growth substrate pretreatment

[0026] The growth substrate is cleaned by acid-base chemical surface to realize the pretreatment of the growth substrate to prepare for the subsequent growth of zinc oxide. However, if the growth substrate is clean, it can be directly transferred to ZnO without surface pollution in the growth reaction chamber.

[0027] Preferably, the growth substrate pretreatment process is to clean the surface with an organic solution of acetone or isopropanol, then clean the surface with a mixture of hydrochloric acid and hydrogen peroxide, and finally rinse with pure water, and use high-purity N 2 .

[0028] Preferably, the growth substrate is an AlInGaP or AlInGaN-based epitaxial material.

[0029] S2, growing ZnO seed...

Embodiment

[0073] Clean the surface of the GaN-LED epitaxial wafer with acetone, then wash the surface with a mixture of hydrochloric acid and hydrogen peroxide, and finally rinse with pure water, and use high-purity N 2 blow dry.

[0074] Then put it into the MOCVD growth furnace under the Ar atmosphere, and adjust the temperature in the MOCVD growth furnace to 500 ° C, while controlling the pressure at 10 torr, and then pass DEZn, O 2 and TMAl, where the flow rate of DEZn is 1.0×10 -4 mol / min, O 2 The flow rate is 2.5×10 -2 mol / min, the flow rate of TMAl is 2.18×10 -5 mol / min until Al-doped ZnO with a thickness of 20 nm grows on the surface.

[0075] Then stop feeding DEZn, O 2 and TMAl, and adjust the temperature in the MOCVD growth furnace to 600° C., while still controlling the pressure at 10 torr, and keep it for 10 minutes to complete the first crystallization treatment in the MOCVD growth furnace.

[0076] Then the temperature in the MOCVD growth furnace was adjusted to 500...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a crystalline nanostructured Zinc Oxide transparent conductive film. The method comprises the steps of growth substrate pretreatment, Zinc Oxide seed layer growth, first crystallization treatment, Zinc Oxide current spreading layer growth, second crystallization treatment, nanostructured Zinc Oxide surface layer growth, and third crystallization treatment. According to the preparation method of the invention, through growing three layers of Zinc Oxide on a growth substrate and carrying out separate crystallization treatment, the crystalline nanostructured Zinc Oxide transparent conductive film is prepared, and a problem that TCL performance and structure are insufficient in the existing LED technology and application field requirements of high brightness, high power and high reliability can not be satisfied is solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for preparing a crystallized nanostructured zinc oxide transparent conductive film, and also relates to the crystallized nanostructured zinc oxide transparent conductive film prepared by the preparation method. Background technique [0002] With the development of the social concept of energy saving and environmental protection, people's demand for high-brightness and high-power LED products is increasing day by day. The technical requirements for light emitting diodes (light emitting diode, LED for short) are getting higher and higher. However, the lack of current LED P-type material technology relatively limits the development of high-brightness and high-power LED products, such as the LED structure of AlGaInP-based materials. In order to improve the LED external quantum efficiency of this structure, it is necessary to grow a thickness of 8um on the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/42H01L21/02
Inventor 王钢陈梓敏范冰丰马学进
Owner SUN YAT SEN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com