Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of X-ray neutral attenuator and preparation method thereof

An X-ray and attenuating sheet technology, applied in the field of X-ray neutral attenuating sheet and its preparation, can solve the problems of short ablation time at the bottom, reduced production efficiency, poor surface uniformity, etc., so as to solve the phenomenon of cone holes and improve production efficiency , Improve the effect of punching efficiency

Active Publication Date: 2019-12-13
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The traditional neutral attenuator uses laser drilling to achieve a uniform hole array, so as to attenuate the X-rays, but it has the following disadvantages: (1) Poor surface uniformity: the method of laser drilling is to pass the laser on the tantalum sheet The hole is drilled by ablation. Due to the limitation of the spot and the instability of thermal ablation, the hole diameter prepared by laser drilling is uneven, and the surface uniformity of the attenuation sheet is poor. (2) Taper hole phenomenon: through micro-laser drilling The hole prepared by the method of hole, because the surface ablation time is long and the bottom ablation time is short, the prepared hole presents a tapered hole, which leads to a certain slope of the X-ray transmittance curve, which is not a fixed value, and cannot be regarded as a medium. sex attenuator
(3) Low production efficiency: The efficiency of laser drilling is low. As the effective area increases, the number of holes increases sharply, resulting in increased drilling time and reduced production efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of X-ray neutral attenuator and preparation method thereof
  • A kind of X-ray neutral attenuator and preparation method thereof
  • A kind of X-ray neutral attenuator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0024] see figure 1 , a preparation method of an X-ray neutral attenuator, comprising:

[0025] a) Forming a first conductive metal layer on one side of the substrate.

[0026] b) Form a photoresist layer on the surface of the first conductive metal layer away from the substrate, after exposure and development, form a hole array on the photoresist layer, and form a second conductive metal by electroplating on the photoresist layer with the hole array layer, and remove the remaining photoresist to obtain a sample with an array of holes.

[0027] c) removing the substrate and the first conductive metal layer in the sample.

[0028] Specifically, in step a), the substrate is a silicon oxide wafer, which is convenient for subsequent removal.

[0029] The first conductive metal layer is deposited on the substrate by a magnetron sputtering process as an electroplating seed layer, wherein the magnetron sputtering process can effectively improve the efficiency of coating, and at th...

Embodiment 1

[0049] A kind of X-ray neutral attenuator, it is made by following method:

[0050] 1) Deposit a 40nm first conductive metal layer on a 2-inch silicon oxide wafer by a magnetron sputtering process.

[0051] 2) After spin-coating SU-8 photoresist with a thickness of 35 μm on the surface of the first conductive metal layer far away from the substrate, bake at 60°C for 15 minutes, then bake at 90°C for 35 minutes, and expose to ultraviolet rays for 24s, then bake at 65°C Bake at ℃ for 15 minutes, then bake at 90℃ for 50 minutes, and then develop with SU-8 special developer for 3 minutes, and form a hole array composed of cylinders in the photoresist layer.

[0052] 3) After the photoresist layer with the hole array is plated with a 20 μm second conductive metal layer at a rate of 3 μm / h by a pulse microplating process, the residual photoresist is removed by soaking in NMP solution, and the hole array is obtained. sample.

[0053] Wherein, the diameter of each hole in the hole a...

Embodiment 2

[0057] A kind of X-ray neutral attenuator, it is made by following method:

[0058] 1) Deposit a 50nm first conductive metal layer on a 2-inch silicon oxide wafer by a magnetron sputtering process.

[0059] 2) After spin-coating SU-8 photoresist with a thickness of 25 μm on the surface of the first conductive metal layer away from the substrate, bake at 55°C for 13 minutes, then bake at 85°C for 30 minutes, and expose to ultraviolet rays for 26s, then bake at 65°C Bake at ℃ for 16 minutes, then bake at 85℃ for 40 minutes, then develop with SU-8 special developer for 2.7 minutes, and form a hole array composed of cylinders in the photoresist layer.

[0060] 3) After the photoresist layer with the hole array is plated with a 25 μm second conductive metal layer at a rate of 2.5 μm / h using a pulse microplating process, the remaining photoresist is removed by soaking in NMP solution to obtain a hole. array of samples.

[0061] Wherein, the diameter of each hole in the hole array ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an X-ray neutral attenuator and a preparation method thereof, and relates to the field of quantitative measurement of soft X-ray radiation flows. The preparation method comprises the following steps: forming a first conductive metal layer on the surface at one side of a substrate; forming a photoresist layer on the surface at one side of the first conductive metal layer away from the substrate, and performing exposure and development to form a pore array on the photoresist layer; forming a second conductive metal layer on the photoresist layer having the pore array through electroplating, and removing the residual photoresist to obtain a sample having the pore array; and removing the substrate and the first conductive metal layer. The preparation method effectively improves the surface uniformity, attenuation characteristic and production efficiency of the X-ray neutral attenuator. For the X-ray neutral attenuator prepared by the preparation method, each pore in the pore array is uniform in pore diameter, and the side wall of each pore is steep; and the X-ray neutral attenuator is favorable in surface uniformity, so that the X-ray transmittance has high consistency, thereby realizing quantitative and accurate measurement of soft X-ray radiation flows.

Description

technical field [0001] The invention relates to the field of quantitative measurement of soft X-ray radiation flow, and in particular to an X-ray neutral attenuator and a preparation method thereof. Background technique [0002] In the field of inertial confinement fusion, black cavity physics, radiation transport, radiation ablation, radiation opacity, and implosion dynamics all require quantitative measurements of soft X-ray radiation flux. Radiation flow is generally measured using X-ray flat-response X-ray diode (XRD) detectors. During the measurement process, the debris generated by laser targeting may adhere to the composite filter or penetrate the filter, thereby affecting the measurement accuracy of the radiation flow; on the other hand, as the laser energy increases, the increase of the radiation flow leads to a flat response detection The detector works in the non-linear region, beyond the working range of the detector. Therefore, neutral attenuators are used to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G21K1/10
CPCG21K1/10
Inventor 车兴森侯立飞张颖娟刘慎业杜华冰杨轶濛
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS