Method for alkali metal ions to assist transitional metal chalcogenides in growth

A technology of alkali metal ions and chalcogen compounds, applied in the field of materials, can solve the problems of long growth time, poor quality, small sample size, etc., and achieve the effect of efficient growth

Active Publication Date: 2017-12-08
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the current process of preparing transition metal chalcogenides on different substrates using

Method used

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  • Method for alkali metal ions to assist transitional metal chalcogenides in growth
  • Method for alkali metal ions to assist transitional metal chalcogenides in growth
  • Method for alkali metal ions to assist transitional metal chalcogenides in growth

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Clean the purchased quartz glass (1cm×1cm, thickness 2mm). The cleaning method is: place the quartz glass in deionized water (18.2MΩ cm), acetone (analytical pure) and isopropanol (analytical pure) in sequence. Ultrasonic cleaning was performed for 10 minutes, followed by drying with high-purity nitrogen to complete the cleaning. Put the cleaned quartz glass on the graphite boat, place a molybdenum foil with the same size as the substrate 10mm above the graphite boat, place them together in a high-temperature tubular reactor, and place 100g of elemental sulfur powder at 15cm upstream of the airflow relative to the substrate , and feed high-purity argon (50 sccm) to flush the reaction chamber for 10 minutes to remove residual air in the chamber. Then start the heating program to heat the reaction chamber. The final temperatures of the sulfur powder and the substrate are 100°C and 730°C respectively, the heating time is 35 minutes, and the temperature is kept constant for...

Embodiment 2

[0044]Clean the purchased quartz glass (1cm×1cm, thickness 2mm) by placing the glass in deionized water (18.2MΩ·cm), acetone (analytical grade) and isopropanol (analytical grade) in turn. Ultrasonic cleaning for 10 minutes, followed by drying with high-purity nitrogen to complete the cleaning. The purchased soda-lime glass (1 cm×1 cm) was placed on a graphite boat together with the cleaned quartz glass, and the soda-lime glass was placed upstream of the gas flow of the quartz glass. Place a molybdenum foil with the same size as the substrate at 10mm above the graphite boat, place them together in a high-temperature tubular reactor, place 100g of elemental sulfur powder at 15cm upstream of the airflow relative to the substrate, and feed high-purity argon (50sccm) Flush the reaction chamber for 10 minutes to remove residual air in the chamber. Then start the heating program to heat the reaction chamber, the final temperatures of the sulfur powder and the substrate are 100°C and...

Embodiment 3

[0047] Clean the purchased quartz glass (1cm×1cm, thickness 2mm) by placing the glass in deionized water (18.2MΩ·cm), acetone (analytical grade) and isopropanol (analytical grade) in turn. Ultrasonic cleaning for 10 minutes, followed by drying with high-purity nitrogen to complete the cleaning. Prepare a sodium chloride solution with a solution mass fraction of 0.01g / ml, spin-coat 0.1ml of the sodium chloride solution on the surface of quartz glass with a rubber dropper, and place it on a graphite boat. Place a molybdenum foil with the same size as the substrate at 10mm above the graphite boat, place them together in a high-temperature tubular reactor, place 100g of elemental sulfur powder at 15cm upstream of the airflow relative to the substrate, and feed high-purity argon (50sccm) Flush the reaction chamber for 10 minutes to remove residual air in the chamber. Then start the heating program to heat the reaction chamber, the final temperatures of the sulfur powder and the su...

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Abstract

The invention discloses a method for alkali metal ions to assist transitional metal chalcogenides in growth. The method comprises the following steps: firstly, cleaning a substrate; secondly, laying a material containing alkali metal ions on a graphite boat containing the substrate and on the upstream or above the substrate; thirdly, laying a molybdenum foil or tungsten foil having the same size with that of the substrate above the graphite boat containing the substrate, and laying chalcogen simple substance on the upstream of an air flow relative to the substrate; fourthly, removing residual air in a reaction chamber, leading argon into the reaction chamber, heating the chalcogen simple substance and the substrate respectively to different temperatures after air flow is stable, then ensuring that the temperature is constant, and growing large-sized transitional metal chalcogenides on the substrate a few minutes later. According to the method, the transitional metal chalcogenides are grown by utilizing the alkali metal ions for assisting, samples with large sizes can be obtained within a short time, and the method realizes efficient preparation of high-quality transitional metal chalcogenides.

Description

technical field [0001] The invention belongs to the field of materials. Specifically, the invention relates to the efficient preparation of transition metal chalcogen compounds such as large-sized single-layer molybdenum disulfide and tungsten disulfide by using a low-pressure chemical vapor deposition method with the assistance of alkali metal ions. Background technique [0002] Two-dimensional transition metal chalcogenides (MX 2 ,M=Mo,W; X=S,Se,Te), as a class of graphene-like materials, has attracted widespread attention due to its unique physical and chemical properties, such as the transformation from bulk to monolayer from direct to indirect Bandgap transitions, strong light-matter interactions, superconductivity, charge density waves, valley inequalities, etc. These novel properties make it have very broad application prospects in photocatalysis, electrocatalysis, field effect transistors, photodetectors, etc., and also provide a good platform for the study of basic...

Claims

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Application Information

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IPC IPC(8): C01G39/06C01G41/00C01B19/00
CPCC01B19/007C01G39/06C01G41/00C01P2002/82C01P2004/02C01P2004/22C01P2004/51C01P2004/61
Inventor 张艳锋杨鹏飞张哲朋
Owner PEKING UNIV
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