Preparation method of composite anti-electroplating mask

Abstract

The invention provides a preparation method of a composite anti-electroplating mask. A TiO2 and photoresist composite film is used as an anti-electroplating film. A composite film is prepared by using the photoresist by means of sputtering, photoetching and etching. The method is simple and does not require additional process equipment. The composite film retains the high graphics resolution and high line precision of the photoresist as the anti-electroplating film, and overcomes the unfavorable characteristics of the photoresist unresisting to the corrosion of an electroplating solution. The method solves a problem that a photoresist mask is liable to be dissolved and eroded in the electroplating solution, introduces a TiO2 film to form the composite anti-electroplating mask with the photoresist, and determines the thickness of the TiO2 film and the photoresist and a preparation process and process parameters.

Description

technical field [0001] The invention relates to a thin film circuit preparation process. Background technique [0002] Thin-film circuits are made of overlapping conductors, passive devices and insulating dielectric films on a polished substrate by using film-forming processes such as vacuum coating and electroplating, and patterning technologies such as ultraviolet lithography, wet etching, and dry etching. Multilayer interconnection circuit structure. Compared with other types of circuits, thin-film circuits have high interconnection density and high line precision, can realize small hole metallization, integrate passive components such as resistors, capacitors and inductors, and manufacture high-power circuits. The entire package structure has system-level functions It has a wide range of applications in microwave and millimeter wave circuits in airborne, spaceborne and aerospace fields, and is a very potential microwave circuit substrate technology. [0003] Usually, t...

AI Technical Summary

Problems solved by technology

The mature photoresist products on the market have high viscosity and are suitable for spin coating. If spray coating is required, the photoresist must be diluted. There are a lot of solvents in the diluted photoresist, and the chemical stability and physical stability are poor.

Diluted photoresist is used as the anti-electroplating film. In the subsequent electroplating process, the corrosion resistance of the electroplating solution is poor, and the photoresist is easy to dissolve and degumming occurs, resulting in fuzzy circuit graphics and production failure.

[0004] At present, there are two types of methods to solve this problem. One is to use photoresist resistant to electroplating solution, but the photoresist resistant to electroplating solution needs to be sprayed when coating complex surfaces, and the photoresist needs to be diluted. After the resist is diluted, there is still the problem of poor corrosion resistance to the plating solution; another method is to etch the seed layer first, pattern the seed layer and then electroplate without an anti-electroplating film, but the electroplating of isolated patterns needs to introduce a process line, high density It is not easy to remove complex circuit process lines in the later stage. In addition, there is no electroplating film plating, and there is no restriction of electroplating film. When the circuit is electroplated, metal ions will expand around the pattern, resulting in poor pattern accuracy and low bonding force with the substrate.

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