Method for prolonging lifetime of carriers of silicon carbide epitaxial layer

A technology of carrier lifetime and epitaxial layer, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of SiC epitaxial wafer production capacity decline, etc., to eliminate carbon vacancies, increase growth rate, and improve The effect of carrier lifetime

Active Publication Date: 2017-12-19
李哲洋
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Problems solved by technology

If the epitaxy rate below 10μm/h is used to ensure the carrier lifetime of SiC ep

Method used

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  • Method for prolonging lifetime of carriers of silicon carbide epitaxial layer
  • Method for prolonging lifetime of carriers of silicon carbide epitaxial layer
  • Method for prolonging lifetime of carriers of silicon carbide epitaxial layer

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Experimental program
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Embodiment

[0044] to grow image 3 The specific method of the silicon carbide epitaxial structure shown:

[0045] (1) Select a silicon carbide substrate with a silicon surface that is 4° to the direction and place the substrate in the graphite base of the reaction chamber;

[0046] (2) Use argon to replace the gas in the reaction chamber several times, then introduce hydrogen into the reaction chamber, gradually increase the flow rate of hydrogen to 100L / min, set the pressure of the reaction chamber to 100mbar, and gradually raise the temperature of the reaction chamber to 1600°C ;

[0047] (3) After reaching the set temperature, open the intake valves of silane, propane and nitrogen, and put all kinds of sources into the exhaust gas path, set the flow rate of silane to 25 sccm, propane flow rate to 7.5 sccm, nitrogen flow rate to 500 sccm, and keep the other The parameters remain unchanged, and the silicon carbide substrate is subjected to in-situ hydrogen etching for 10 minutes;

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Abstract

The invention discloses a method for prolonging lifetime of carriers of a silicon carbide epitaxial layer. By mainly adoption of a combination of a low-speed high-carbon-silicon ratio process and a high-speed low-carbon-silicon-ratio process, a required thick layer silicon carbide epitaxial layer is grown periodically; compared with the single low-speed high-carbon-silicon ratio process, the growth rate of the epitaxial layer is improved effectively by the method disclosed in the invention; and meanwhile, by combination with high-temperature annealing treatment, carbon vacancy is eliminated by carbon element migration in a chemical vapor deposition thermodynamic equilibrium condition, so that carbon vacancy effective restoration in the in-situ growth process is realized, and the lifetime of the carriers of the silicon carbide epitaxial layer is prolonged. The epitaxial material grown by the epitaxial method provided by the invention does not need ion implantation or high-temperature oxidization post treatment after epitaxy completeness, and the method is compatible with the existing commercial silicon carbide epitaxial furnace base process, so that the method has extremely high popularization value.

Description

technical field [0001] The invention relates to a silicon carbide epitaxial growth method, in particular to a method for improving the carrier lifetime of the silicon carbide epitaxial layer. Background technique [0002] Among different wide-bandgap semiconductor materials, silicon carbide (SiC) is a very potential epitaxial material, which has the characteristics of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and radiation resistance. 4H-SiC is the material with the best performance among SiC polytypes. It has a larger band gap, bulk electron mobility, and smaller anisotropy. It is the material of choice for the development of power electronic devices. [0003] Compared with traditional silicon devices, the biggest advantage of 4H-SiC power electronic devices is that they can work at high voltage and ultra-high voltage. Therefore, epitaxial materials suitable for 4H-SiC power electronic devices have been developing towards...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/324C23C16/44
CPCC23C16/44H01L21/02529H01L21/0262H01L21/324
Inventor 李哲洋
Owner 李哲洋
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