Nuclear-shell alloy quantum dots and preparation method thereof

A technology of quantum dots and alloys, which is applied in the field of core-shell alloy quantum dots and its preparation, can solve the problems of cumbersome operation, affecting quantum yield and stability, and limiting the application research of quantum dots to carry out large-scale production of products, etc., to achieve operational Simple, improve quantum yield and stability, reduce the effect of defect generation

Inactive Publication Date: 2018-01-12
HENAN UNIVERSITY
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  • Abstract
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  • Application Information

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Problems solved by technology

Although the encapsulation operation of the continuous ion layer adsorption reaction method is well controllable and suitable for many types of objects, the operation is cumbersome, and steps such as precipitation and purification will change the surface of the quantum dots, resulting in defects between the core body and the shell material. Thus affecting the quantum yield and stability, to a certain extent, restricting the development of quantum dot-related application research and the mass production of products

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  • Nuclear-shell alloy quantum dots and preparation method thereof
  • Nuclear-shell alloy quantum dots and preparation method thereof
  • Nuclear-shell alloy quantum dots and preparation method thereof

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[0030] The invention provides a method for preparing a core-shell alloy quantum dot, comprising the following steps:

[0031] (1) Mixing the source of nucleating cations, the source of nucleating anions and a hydrocarbon organic solvent, keeping warm at the nucleation temperature to obtain the quantum dot nuclei; the nucleation temperature is 220-280°C;

[0032] (2) mix the quantum dot core body that described step (1) obtains with shell-forming cation source, shell-forming anion source and hydrocarbon organic solvent at the shell-forming temperature, carry out shell-forming reaction, obtain core-shell alloy quantum dot; The shell forming temperature is 300-318°C;

[0033] The source of nucleating cations and the source of shell-forming cations are independently a source of zinc and / or a source of cadmium;

[0034] The source of nucleating anions and the source of nucleating anions are independently a source of sulfur and / or a source of selenium.

[0035] In the present inve...

Embodiment 1

[0063] Mix 0.16g of Se powder and 20mL of octadecene into a 50mL three-neck flask, heat at 220°C to obtain a light yellow solution, which is used as a Se precursor for later use; dissolve 9mmol (5.643g) of zinc oleate in 30mL of liquid paraffin, Standby as Zn precursor;

[0064] Take 2mL of Se precursor and 8mL of liquid paraffin and mix them into a 100mL three-necked bottle. When heated to 280°C under nitrogen protection, inject 1.3mL of Zn precursor into the above mixed solution, and react at 280°C for 10 minutes to obtain ZnSe Quantum dot nuclei.

[0065] After the solution after the above reaction for 10 minutes was heated to 318°C, the mixture of 2mL of octane mercaptan and 20mL of Zn precursor was added dropwise to the solution at 318°C obtained above, and the dropping rate was 6mL / h. After the dropwise addition was completed, the temperature was continued to rise and the temperature was kept at 340° C. for 4 hours to grow the shell layer to obtain ZnSe / ZnS core-shell q...

Embodiment 2

[0072] Dissolve 7.294g of cadmium oleate in 30mL of liquid paraffin at 100°C, and use it as a nucleating cation source Cd precursor for later use;

[0073] Take 1mmol Se powder and 20mL liquid paraffin, mix them into a 100mL three-neck flask, raise the temperature to 240°C, inject 5mL of Cd precursor, and react at 240°C for 30min to obtain CdSe quantum dot cores.

[0074] After heating up to 310°C, add dropwise 10mL of a mixture of Cd precursor obtained by dissolving 1.351g of cadmium oleate in 10mL of liquid paraffin and 0.5mL of dodecyl mercaptan, at a rate of 10mL / h. Reaction 4h. Finally, CdSe / CdS core-shell quantum dots are obtained.

[0075] The quantum yield test was carried out on the prepared CdSe / CdS core-shell quantum dots, and the quantum yield was 90%.

[0076] Fluorescence tests were performed on the quantum nuclei with different growth times and the inner-shell quantum dots with different growth times. The fluorescence spectrum changes are shown in Figure 5 A...

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Abstract

The invention provides core-shell alloy quantum dots and a preparation method of the core-shell alloy quantum dots. The preparation method comprises the following steps: mixing a nucleation cation source, a nucleation anion source and a hydrocarbon organic solvent, and carrying out heat preservation at the nucleation temperature of 220-280 DEG C, thereby obtaining quantum dot nuclear bodies; mixing the obtained quantum dot nuclear bodies with a crusting cation source, a crusting anion source and a hydrocarbon organic solvent at the crusting temperature of 300 to 318 DEG C to obtain core-shellalloy quantum dots. By adopting the preparation method of the core-shell alloy quantum dots, quantum dot crystal nuclei are synthesized at lower temperature and a shell layer is grown at higher temperature later to obtain the core-shell alloy quantum dots with high quantum yield and good stability.

Description

technical field [0001] The invention relates to the technical field of nano functional materials, in particular to a core-shell alloy quantum dot and a preparation method thereof. Background technique [0002] Fluorescent quantum dots, especially II-VI semiconductor nano-fluorescent quantum dots are research hotspots in recent years. Fluorescence with different wavelengths can be produced by adjusting the size of quantum dots, which has attracted extensive attention for its potential applications in biomolecular labeling and immunodetection, light-emitting diodes, lasers, and solar cells. [0003] In the prior art, the quantum dot encapsulation method is often used to further improve the optical stability of quantum dot materials, so as to expand the application range of quantum dots. The existing quantum dot encapsulation methods mainly include the continuous ion layer adsorption reaction method of high temperature nucleation and relatively low temperature growth shell lay...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00
Inventor 申怀彬吴瑞丽王阿强王洪哲李林松
Owner HENAN UNIVERSITY
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