Epitaxial wafer of light-emitting diode and preparation method thereof

A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effects of promoting plane spreading, increasing doping concentration, and improving uniformity

Inactive Publication Date: 2018-01-16
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low luminous efficiency of light-emitting diodes in the prior art, an embodiment of the present invention provides an epitaxial wafer of a light-emitting diode and a preparation method thereof

Method used

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  • Epitaxial wafer of light-emitting diode and preparation method thereof
  • Epitaxial wafer of light-emitting diode and preparation method thereof
  • Epitaxial wafer of light-emitting diode and preparation method thereof

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Embodiment 1

[0029] An embodiment of the present invention provides an epitaxial wafer of a light emitting diode, see figure 1 , the epitaxial wafer includes a substrate 1 and a buffer layer 2, an undoped gallium nitride layer 3, an N-type gallium nitride layer 4, a multi-quantum well layer 5, a hole supply layer 6 and P-type contact layer 7 .

[0030] In this example, see figure 2 , the hole supply layer 6 includes at least one sublayer 60, the sublayer 60 includes a P-type doped InGaN layer 61 and an aluminum nitride layer 62 stacked on the P-type doped InGaN layer 61 ( figure 2 It is only taken as an example that the number of sub-layers is 3, and the present invention is not limited thereto).

[0031] In the implementation of the present invention, the hole-providing layer is changed from a P-type gallium nitride layer to an alternately stacked P-type doped indium gallium nitride layer and an aluminum nitride layer, and the P-type doped indium gallium nitride layer can provide hole...

Embodiment 2

[0047] The embodiment of the present invention provides a method for preparing an epitaxial wafer of a light-emitting diode, which is suitable for preparing the epitaxial wafer provided in Example 1, see image 3 , the preparation method comprises:

[0048] Step 101: Provide a substrate.

[0049] Step 102: sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, a hole supply layer and a P-type contact layer on the substrate.

[0050] In this embodiment, the hole supply layer includes at least one sublayer, and the sublayer includes a P-type doped InGaN layer and an AlN layer laminated on the P-type doped InGaN layer.

[0051] In the implementation of the present invention, the hole-providing layer is changed from a P-type gallium nitride layer to an alternately stacked P-type doped indium gallium nitride layer and an aluminum nitride layer, and the P-type doped indium gallium nitride layer can provide holes. The aluminum ni...

Embodiment 3

[0056] An embodiment of the present invention provides a method for manufacturing an epitaxial wafer of a light emitting diode, and the epitaxial wafer provided in this embodiment is a specific implementation of the manufacturing method provided in Embodiment 2. When it is realized, trimethylgallium or trimethylethyl is used as the gallium source, high-purity nitrogen is used as the nitrogen source, trimethylindium is used as the indium source, trimethylaluminum is used as the aluminum source, the N-type dopant is silane, and the P-type dopant is silane. Miscellaneous agent selects dichloromagnesium for use.

[0057] Specifically, see Figure 4 , the preparation method comprises:

[0058] Step 200: Control the temperature to 1000° C. to 1200° C., anneal the sapphire substrate in a hydrogen atmosphere for 8 minutes, and perform nitriding treatment.

[0059] Understandably, step 200 may serve to clean the surface of the sapphire substrate.

[0060] In this embodiment, control...

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Abstract

The invention, which belongs to the technical field of the semiconductors, discloses an epitaxial wafer of a light-emitting diode and a preparation method thereof. The epitaxial wafer comprises a substrate, a buffer layer, an un-doped gallium nitride layer, an N type gallium nitride layer, a multi-quantum-well layer, a hole supply layer and a P type contact layer, wherein the buffer layer, the un-doped gallium nitride layer, the N type gallium nitride layer, the multi-quantum-well layer, the hole supply layer and the P type contact layer are laminated on the substrate successively. The hole supply layer includes at least one sub layer including a P type doped indium gallium nitride layer and an aluminum nitride layer stacked on the P type doped indium gallium nitride layer. According to the invention, because the P type doped indium gallium nitride layer is used for providing a hole and the aluminum nitride layer is used for replacing an electron barrier layer to suppress over flowingof electrons in at the hole supply layer, the distance between the hole supply layer and the multi-quantum-well layer is reduced, the electrons provided by the hole supply layer are injected into themulti-quantum-well layer, the number of holes of the multi-quantum-well layer is increased, so that the light emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The epitaxial wafer is the primary product in the process of manufacturing light-emitting diodes. [0003] The existing epitaxial wafer includes a sapphire substrate and a buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer and a p-type gallium nitride layer stacked on the sapphire substrate in sequence. layer. Wherein, the multi-quantum well layer includes multiple quantum wells and multiple quantum barriers, the multiple quantum wells and multiple quantum barriers are alternately stacked, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00
Inventor 郭炳磊葛永晖吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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