Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Tunneling Magnetoresistance Device Driven by Magnetic Phase Transition

A technology of tunneling magnetoresistance and devices, applied in the field of magnetoelectricity, can solve problems such as limiting the practical process and generating magnetoresistance effects

Active Publication Date: 2020-01-31
TSINGHUA UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, tunneling magnetoresistance devices with a single ferromagnetic layer induce changes in the density of states through changes in the direction of the magnetic moment, thereby producing magnetoresistance effects; and the corresponding magnetoresistance effects can only be realized at low temperatures, which limits its practicality. process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Tunneling Magnetoresistance Device Driven by Magnetic Phase Transition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Example 1. Preparation of magnetic tunnel junction with MgO / α-FeRh / MgO / γ-FeRh structure

[0028] Deposit α-FeRh (bottom electrode) / MgO (tunneling layer) / γ-FeRh (top electrode) multilayer film structure by magnetron sputtering on the single crystal MgO (100) substrate, that is, the present invention has ferromagnetic Fabrication of Tunneling Magneto-Resistance Devices with Phase-Change Metals. In the multilayer film structure, α-FeRh is antiferromagnetic at room temperature, the thickness of the α-FeRh layer is 30nm, the thickness of the tunneling layer MgO is 2.7nm, and the thickness of γ-FeRh is 10nm. Such as figure 1 From the electron microscope photos shown, it can be seen that the interface of the prepared multilayer film is clear and smooth, and it is epitaxial growth. Subsequently, the multilayer film was processed into a size of 5 × 3 μm by UV exposure, argon ion etching combined with metal lift-off method 2 ~100×60μm 2 (20×10μm 2 ) tunnel junction, two wire...

Embodiment 2

[0031] Example 2. Preparation of magnetic tunnel junction with MgO / α-FeRh / γ-FeRh / MgO / γ-FeRh structure

[0032] Deposition of α-FeRh (bottom electrode) / γ-FeRh (insertion layer) / MgO (tunneling layer) / γ-FeRh (top electrode) multilayer film structure on a single crystal MgO(100) sheet by magnetron sputtering , that is, the metal with ferromagnetic phase transition of the present invention prepares tunnel magnetoresistance devices. In the multilayer film structure, α-FeRh is antiferromagnetic at room temperature, the thickness of the α-FeRh layer is 30nm, the thickness of the insertion layer γ-FeRh is 0.2-1.2nm, the thickness of the tunneling layer MgO is 2.7nm, and the top electrode The thickness of γ-FeRh is 10 nm. The interface of the prepared multilayer film is clear and smooth, and it is epitaxial growth. Subsequently, the multilayer film was processed into a size of 20×10 μm by UV exposure, argon ion etching combined with metal lift-off method 2 Tunnel junction, lead two w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a tunnel magnetoresistance device driven by magnetic phase transition. The tunnel magnetoresistance device includes a substrate, a bottom electrode, a tunneling layer and a top electrode that are stacked in sequence; the bottom electrode has a ferromagnetic phase change; the material of the bottom electrode is Fe-Rh alloy or Fe-Ga alloy; The thickness of the bottom electrode is greater than 3 nm; an insertion layer is provided between the bottom electrode and the tunneling layer; the material of the insertion layer is paramagnetic metal. The present invention uses metal with ferromagnetic phase change on one side of the tunnel layer to prepare a tunnel magnetoresistance device. By utilizing the large changes in the density of metal states in the ferromagnetic phase change, the tunnel magnetoresistance device can achieve more than 10% of the energy at room temperature. Magnetoresistance effect; and the polarity and size of the device's magnetoresistance value can be controlled through the thickness of the interface insertion layer.

Description

technical field [0001] The invention relates to a tunnel magnetoresistance device driven by magnetic phase transition, belonging to the field of magnetoelectric technology. Background technique [0002] Tunnel anisotropic magnetoresistance effect is a very important physical phenomenon in spintronics, which mainly describes the magnetoresistance effect produced in the tunneling structure of a single magnetic layer. Different from the traditional tunnel junction composed of two layers of ferromagnetic semiconductors inserted into the tunneling barrier layer, this kind of device that relies on the strong orbital coupling in the single magnetic layer to realize the injection and detection of spin-polarized current is more conducive to the device The simplification and control of spintronics, as well as the rich physical phenomena and potential application value it exhibits, have opened up a new branch of spintronics research. Since this phenomenon was discovered in the (Ga,Mn)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H10N50/10
Inventor 宋成陈贤哲潘峰
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com