A Tunneling Magnetoresistance Device Driven by Magnetic Phase Transition

A technology of tunneling magnetoresistance and devices, applied in the field of magnetoelectricity, can solve problems such as limiting the practical process and generating magnetoresistance effects

Active Publication Date: 2020-01-31
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far, tunneling magnetoresistance devices with a single ferromagnetic layer induce changes in the density of states through changes in the direction of the magnetic moment, thereby producing magnetoresistance effects; and the corresponding magnetoresistance effects can only be realized at low temperatures, which limits its practicality. process

Method used

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  • A Tunneling Magnetoresistance Device Driven by Magnetic Phase Transition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Example 1. Preparation of magnetic tunnel junction with MgO / α-FeRh / MgO / γ-FeRh structure

[0028] Deposit α-FeRh (bottom electrode) / MgO (tunneling layer) / γ-FeRh (top electrode) multilayer film structure by magnetron sputtering on the single crystal MgO (100) substrate, that is, the present invention has ferromagnetic Fabrication of Tunneling Magneto-Resistance Devices with Phase-Change Metals. In the multilayer film structure, α-FeRh is antiferromagnetic at room temperature, the thickness of the α-FeRh layer is 30nm, the thickness of the tunneling layer MgO is 2.7nm, and the thickness of γ-FeRh is 10nm. Such as figure 1 From the electron microscope photos shown, it can be seen that the interface of the prepared multilayer film is clear and smooth, and it is epitaxial growth. Subsequently, the multilayer film was processed into a size of 5 × 3 μm by UV exposure, argon ion etching combined with metal lift-off method 2 ~100×60μm 2 (20×10μm 2 ) tunnel junction, two wire...

Embodiment 2

[0031] Example 2. Preparation of magnetic tunnel junction with MgO / α-FeRh / γ-FeRh / MgO / γ-FeRh structure

[0032] Deposition of α-FeRh (bottom electrode) / γ-FeRh (insertion layer) / MgO (tunneling layer) / γ-FeRh (top electrode) multilayer film structure on a single crystal MgO(100) sheet by magnetron sputtering , that is, the metal with ferromagnetic phase transition of the present invention prepares tunnel magnetoresistance devices. In the multilayer film structure, α-FeRh is antiferromagnetic at room temperature, the thickness of the α-FeRh layer is 30nm, the thickness of the insertion layer γ-FeRh is 0.2-1.2nm, the thickness of the tunneling layer MgO is 2.7nm, and the top electrode The thickness of γ-FeRh is 10 nm. The interface of the prepared multilayer film is clear and smooth, and it is epitaxial growth. Subsequently, the multilayer film was processed into a size of 20×10 μm by UV exposure, argon ion etching combined with metal lift-off method 2 Tunnel junction, lead two w...

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Abstract

The invention discloses a tunneling magnetoresistance device driven by magnetic phase transformation. The tunnel magnetoresistance device comprises a substrate, a bottom electrode, a tunneling layer and a top electrode which are sequentially superposed, wherein the bottom electrode has ferromagnetic phase transformation; the bottom plate is made of an Fe-Rh alloy or an Fe-Ga alloy; the thickness of the bottom electrode is greater than 3nm; the bottom electrode and the tunneling layer are further provided with an insertion layer therebetween; the insertion layer is made of paramagnetic metal. According to the invention, the tunneling magnetoresistance device is prepared by using metal with ferromagnetic phase transformation at one side of the tunneling layer, and the tunneling magnetoresistance device is enabled to realize more than 10% of a magnetoresistance effect at a room temperature through using great changes of the metallic state density in ferromagnetic phase transformation; andthe polarity and the magnitude of the magnetoresistance of the device can be controlled through the thickness of the interface insertion layer.

Description

technical field [0001] The invention relates to a tunnel magnetoresistance device driven by magnetic phase transition, belonging to the field of magnetoelectric technology. Background technique [0002] Tunnel anisotropic magnetoresistance effect is a very important physical phenomenon in spintronics, which mainly describes the magnetoresistance effect produced in the tunneling structure of a single magnetic layer. Different from the traditional tunnel junction composed of two layers of ferromagnetic semiconductors inserted into the tunneling barrier layer, this kind of device that relies on the strong orbital coupling in the single magnetic layer to realize the injection and detection of spin-polarized current is more conducive to the device The simplification and control of spintronics, as well as the rich physical phenomena and potential application value it exhibits, have opened up a new branch of spintronics research. Since this phenomenon was discovered in the (Ga,Mn)...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10
Inventor 宋成陈贤哲潘峰
Owner TSINGHUA UNIV
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