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Structure design of active region of a multi-wavelength gan-based vertical cavity surface emitting laser

A technology of vertical cavity surface emission and structure design, which is applied to the structure of the active region, the device for controlling the output parameters of the laser, the laser and other directions, which can solve the problems such as the difficulty in realizing the p-type ohmic contact and the difficulty in growing the nitride distributed Bragg mirror. , to achieve the effect of large gain and broad application prospects

Active Publication Date: 2020-02-18
EAST CHINA NORMAL UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

For GaN-based vertical-cavity surface-emitting lasers, it is difficult to grow nitride distributed Bragg reflectors (DBRs), p-type ohmic contacts are difficult to achieve, and the dielectric film DBR is not conductive, so it is impossible to use similar coupled resonators to obtain multi-wavelength lasers. output

Method used

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  • Structure design of active region of a multi-wavelength gan-based vertical cavity surface emitting laser
  • Structure design of active region of a multi-wavelength gan-based vertical cavity surface emitting laser
  • Structure design of active region of a multi-wavelength gan-based vertical cavity surface emitting laser

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Embodiment 1

[0045] Embodiment 1: Multilayer stacked quantum dot active region structure design.

[0046] Such as figure 1 As shown, the multilayer stacked quantum dot active region is located between the n-type contact region and the p-type contact region, and is composed of quantum dots of different sizes; quantum dots of the same size can be one layer or more than two layers, the present invention figure 1 The active region shown consists of three groups of monolayer quantum dots of different sizes. Among them, the photon energy emitted by small quantum dots is large, that is, the emission wavelength is short; the photon energy emitted by large quantum dots is small, and the emission wavelength is long; the central wavelength of emission of quantum dots of different sizes must be consistent with the wavelength of the emitted laser.

[0047] Assume that the wavelength of the laser to be emitted is λ 1 and lambda 2 . First, according to the laser wavelength λ 1 and lambda 2 Determin...

Embodiment 2

[0051] Embodiment 2: A multi-wavelength GaN-based vertical cavity surface emitting laser structure fabricated by using the multi-layer stacked quantum dot active region.

[0052] Such as Figure 4 As shown, the device structure is as follows:

[0053] Substrate, can adopt sapphire substrate, silicon carbide substrate, gallium nitride substrate and silicon substrate etc., the present invention selects sapphire substrate;

[0054] The bottom reflector can use nitride DBR or dielectric film DBR. Nitride DBR includes AlN / GaN DBR, AlGaN / GaN DBR, AlInN / GaN DBR and Al x Ga 1-x N / Al y Ga 1-y N DBR, etc., where x≠y; dielectric film DBR includes TiO 2 / SiO 2 DBR, ZrO 2 / SiO 2 DBR, Ta 2 o 5 / SiO 2 DBR, Si 3 N 4 / SiO 2 DBR and HfO 2 / SiO 2 DBR, etc., the present invention chooses AlN / GaN DBR as an example;

[0055] The n-type contact region is an n-type GaN layer doped with Si;

[0056] The n-type metal electrode is CrAu (20 / 200 nanometers);

[0057] The active region ...

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Abstract

The invention relates to the field of nitride semiconductor vertical-cavity surface-emitting lasers, and discloses an active region structural design method of a multi-wavelength GaN-based vertical-cavity surface-emitting laser. The active region structural design method comprises the step of designing laser cavity length, quantum dot positions and quantum dot sizes. Through the precise design ofthe sizes of multi-layer quantum dots and spatial positions thereof in a resonant cavity, the maximum coupling between light emitting of the quantum dots of different sizes and corresponding cavity modes and a standing wave optical field in the cavity is realized, thus a plurality of laser modes can obtain large enough gain simultaneously and stable multi-wavelength laser output is realized finally. Meanwhile, the invention further provides a specific device structure of the multi-wavelength GaN-based vertical-cavity surface-emitting laser manufactured by adopting the active region, and application thereof.

Description

technical field [0001] The invention provides an active region structure design of a multi-wavelength GaN-based vertical cavity surface emitting laser, and specifically relates to the field of nitride semiconductor vertical cavity surface emitting lasers. Background technique [0002] As a third-generation semiconductor material, GaN-based materials have a direct band gap and a very high radiative recombination rate. Its luminescent wavelength can cover the entire visible light band by changing the alloy composition, so it has broad application prospects in the fields of solid-state lighting, optical storage, optical communication, and full-color display. [0003] Multi-wavelength vertical cavity surface-emitting lasers can coaxially output multiple wavelengths of laser light at the same time, and can be used in space ranging, terahertz signal generators, optical mixing and nonlinear optics and other fields. The current reports are mainly GaAs-based multi-wavelength vertica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/30H01S5/323H01S5/06H01S5/183
Inventor 翁国恩陈少强胡小波梅洋
Owner EAST CHINA NORMAL UNIV
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