30results about How to "Gain Spectral Width" patented technology

The invention belongs to the technical field of lasers, and in particular relates to a quantum wire laser and a preparation method thereof. The quantum wire laser of the present invention includes: a substrate, a buffer layer disposed on the substrate, an active region disposed on the buffer layer, and a top electrode disposed on the active region; wherein, the active region includes N+1 layer intervals layer and N layers of indium arsenide quantum wire layers, and the spacer layer and the indium arsenide quantum wire layer are arranged alternately; N is an integer greater than or equal to 1. Since the size distribution of the indium arsenide quantum wires arranged in the active region of the present invention is uneven, the energy level distribution of the indium arsenide quantum wires is also uneven, and the excited state of the larger size indium arsenide quantum wires is different from that of the smaller size ones. The ground state of the indium arsenide quantum wire overlaps, so that the obtained quantum wire laser has a very wide gain spectrum, and the simultaneous lasing effect of multiple wavelengths can be realized under the current injection drive.

The present invention is a passive wavelength division multiplexing network optical fiber fault detection system and a detection method thereof, belonging to the technical field of passive wavelength division multiplexing network optical fiber fault detection systems; the technical problem to be solved is: to provide a passive wavelength division multiplexing network optical fiber fault detection system. The improvement of the structure of the optical fiber fault detection system and the detection method using the network; the technical scheme adopted to solve the technical problem is: including a chaotic laser generator, the signal output end of the chaotic laser generator is connected with the second input end of the first optical circulator The signal output end of the first optical circulator is connected in series with the optical isolator and then connected with the input end of the first fiber coupler; The input end of the modulator is connected, the output end of the phase modulator is connected with the first input end of the first optical circulator; the modulation interface of the phase modulator is also connected with a random signal generator; the invention is applied to optical fiber fault detection.

The present invention relates to a semiconductor film internal cladding amplification optical fibre and its perform manufacture method. Said perform is formed from core rod, internal cladding and external cladding, the internal cladding is sandwiched between core rod and external cladding, the core rod is made up by using GeO2 doped quartz material, its refractive index is greater than that of pure quartz material of external cladding; the internal cladding is a film cladding and is made up by using active semiconductor direct band-gap material with amplification function, and the external cladding is made up by using pure quartz material. The manufacture method of perform includes the following steps: (a) adopting improved chemical gas-phase deposition process to make core rod; (b) making external cladding; (c) making film internal cladding; (d) adopting rod-inserting technique to make assembly and (e) reducing rod.

The invention discloses a broadband chaotic laser-based distributed optical fiber dynamic strain sensing device, which comprises a broadband chaotic laser source (1), a 1*2 optical fiber coupler (2),a first polarization controller (3), a high-speed electro-optic modulator (4), a programmable optical delay generator (5), a first optical amplifier (6), an optical polarizer (7), an optical isolator(8), a sensing optical fiber (9), an optical circulator (10), a second optical amplifier (11), a semiconductor optical amplifier (12), a second polarization controller (13), a pulse signal generator (14), a broadband microwave signal source (15), a high speed data acquisition and analysis system (16), a photoelectric detector (17), and a tunable optical filter (18). The pulse signal generator is used to generate high speed pulse signals, synchronous control on the broadband microwave signal source, the semiconductor optical amplifier and the high speed data acquisition and analysis system is realized, and the measurement accuracy and the real-time performance of the sensing system are ensured.

The invention discloses a dissipative soliton laser in 2 micron wave band, including pumping sources, wavelength division multiplexer, isolator, spectral filter, gain fiber, optical fiber polarizationcontroller, fiber polarization beam splitter and micro-nano fiber, the wavelength division multiplexer, isolator, spectral filter, gain fiber, optical fiber polarization controller, A lase resonant cavity is formed by connecte that optical fiber polarization beam splitter and the micro-nano optical fib in series, wherein the micro-nano optical fiber in the loop is more than one section, the diameter of the waist section of at least one section of the micro-nano optical fiber is 800 nm to 1600 nm, the length is 5 mm to 1 m, and the length of the waist section of the at least one section of themicro-nano optical fiber satisfies L1: (L-L1) = 1: 3.5 to 50. Where L1 denotes the length of the waist portion of the micro-nano optical fiber and L denotes the sum of the lengths of all the opticalfibers in the loop. The output spectrum of the invention has a wide spectrum of tens of nanometers and a flat spectrum, and solves the technical problem that the prior art has not solved for a long time.

The invention relates to the field of nitride semiconductor vertical-cavity surface-emitting lasers, and discloses an active region structural design method of a multi-wavelength GaN-based vertical-cavity surface-emitting laser. The active region structural design method comprises the step of designing laser cavity length, quantum dot positions and quantum dot sizes. Through the precise design ofthe sizes of multi-layer quantum dots and spatial positions thereof in a resonant cavity, the maximum coupling between light emitting of the quantum dots of different sizes and corresponding cavity modes and a standing wave optical field in the cavity is realized, thus a plurality of laser modes can obtain large enough gain simultaneously and stable multi-wavelength laser output is realized finally. Meanwhile, the invention further provides a specific device structure of the multi-wavelength GaN-based vertical-cavity surface-emitting laser manufactured by adopting the active region, and application thereof.

The invention discloses a structure of a wide gain spectrum quantum dot material for a semiconductor optical amplifier. The structure comprises an N-type gallium arsenide substrate, an N-type gallium arsenide buffer layer which grows on the N-type gallium arsenide substrate and is used for isolating defects on the substrate, an N-type gallium aluminum arsenide optical lower limiting layer which grows on the N-type gallium arsenide buffer layer and is used for limiting optical modes and current carriers, a self-organizing quantum dot active layer with multiple layers and different periods which grows on the N-type gallium aluminum arsenide optical lower limiting layer, a P-type gallium aluminum arsenide optical upper limiting layer which grows on the quantum dot active layer and is used for limiting the optical modes and current carriers, and a P-type gallium arsenide cap layer which grows on the P-type gallium aluminum arsenide optical upper limiting layer and is used for contacting an electrode. The wide gain spectrum is obtained by using inhomogeneous broadening characteristic of quantum dots with multiple layers and different sizes in the structure.

The invention discloses a precise length matching method in optical fiber interference optical paths. The method is suitable for a Michelson type interference optical path and an M-Z type interference optical path. The Michelson type interference optical path or the M-Z type interference optical path is connected with light sources with filters with different spectral widths, interference fringes are observed through a charge coupled device (CCD), preliminary judgment is carried out, differences of optical lengths of the two optical paths are reduced, the interference contrast ratios of the two optical paths are detected through a photoelectric detector, by means of comparison of the contrast ratios, the relative length of the optical lengths of the two optical paths is precisely judged, and the optical lengths of the two optical paths are matched in the method of abrading the tail ends of optical fibers of the optical paths. According to the method, the two optical paths are precisely matched with each other in a micron-sized mode, the spectral widths of usable light sources in the interference optical paths are widened, phase noise of the light sources and influences of the noise in the optical paths on the whole interference system are reduced, and the signal-to-noise ration and sensitivity of an interference-type optical sensing system are significantly improved.

Techniques are provided for scaling the average power of high-energy solid-state lasers to high values of average output power while maintaining high efficiency. An exemplary technique combines a gas-cooled-slab amplifier architecture with a pattern of amplifier pumping and extraction in which pumping is continuous and in which only a small fraction of the energy stored in the amplifier is extracted on any one pulse. Efficient operation is achieved by propagating many pulses through the amplifier during each period equal to the fluorescence decay time of the gain medium, so that the preponderance of the energy cycled through the upper laser level decays through extraction by the amplified pulses rather than through fluorescence decay.