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Embedded type TiO2 hollow sphere/GaN/Ga2O3 heterojunction photocatalytic thin film and preparation method thereof

A photocatalytic film and hollow sphere technology, which is applied in catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc. separation effect

Active Publication Date: 2018-02-09
东营睿港招商服务有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the wide bandgap and high photogenerated carrier recombination rate limit the β-Ga 2 o 3 photocatalytic activity

Method used

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  • Embedded type TiO2 hollow sphere/GaN/Ga2O3 heterojunction photocatalytic thin film and preparation method thereof
  • Embedded type TiO2 hollow sphere/GaN/Ga2O3 heterojunction photocatalytic thin film and preparation method thereof
  • Embedded type TiO2 hollow sphere/GaN/Ga2O3 heterojunction photocatalytic thin film and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0037] Embedded TiO 2 Hollow sphere / GaN / Ga 2 o 3 A method for preparing a heterojunction photocatalytic thin film, comprising the following steps:

[0038] Step 1, ITO transparent conductive glass pretreatment: ultrasonic cleaning with acetone, absolute ethanol, and deionized water respectively, and vacuum drying;

[0039] Step 2, SiO 2 Preparation of microspheres: Measure 1mL tetraethyl orthosilicate and 10mL absolute ethanol and stir evenly at room temperature; measure 2mL deionized water, 8mL absolute ethanol and 1mL ammonia water and stir evenly at room temperature; Mix and stir at 40°C for 2 hours to obtain SiO 2 Microsphere sol, cleaned with anhydrous ethanol and deionized water ultrasonic circulation to obtain SiO with a particle size of 300-500nm 2 Microspheres;

[0040] Step 3, SiO 2 @TiO 2 Preparation of core-shell microspheres: Measure 1mL tetrabutyl titanate and 80mL absolute ethanol, seal and stir evenly at room temperature; take the SiO prepared in step 2...

Embodiment 2

[0047] An embedded TiO 2 Hollow sphere / GaN / Ga 2 o 3 A method for preparing a heterojunction photocatalytic thin film, comprising the following steps:

[0048] Step 1, ITO transparent conductive glass pretreatment: ultrasonic cleaning with acetone, absolute ethanol, and deionized water respectively, and vacuum drying;

[0049] Step 2, SiO 2 Preparation of microspheres: Measure 1mL tetraethyl orthosilicate and 10mL absolute ethanol and stir evenly at room temperature; measure 2mL deionized water, 8mL absolute ethanol and 1mL ammonia water and stir evenly at room temperature; Mix and stir at 40°C for 2 hours to obtain SiO 2 Microsphere sol, cleaned with anhydrous ethanol and deionized water ultrasonic circulation to obtain SiO with a particle size of 300-500nm 2 Microspheres;

[0050] Step 3, SiO 2 @TiO 2 Preparation of core-shell microspheres: Measure 1mL tetrabutyl titanate and 80mL absolute ethanol, seal and stir evenly at room temperature; take the SiO prepared in ste...

Embodiment 3

[0055] An embedded TiO 2 Hollow sphere / GaN / Ga 2 o 3 A method for preparing a heterojunction photocatalytic thin film, comprising the following steps:

[0056] Step 1, ITO transparent conductive glass pretreatment: ultrasonic cleaning with acetone, absolute ethanol, and deionized water respectively, and vacuum drying;

[0057] Step 2, SiO 2 Preparation of microspheres: Measure 1mL tetraethyl orthosilicate and 10mL absolute ethanol and stir evenly at room temperature; measure 2mL deionized water, 8mL absolute ethanol and 1mL ammonia water and stir evenly at room temperature; Mix and stir at 40°C for 2 hours to obtain SiO 2 Microsphere sol, cleaned with anhydrous ethanol and deionized water ultrasonic circulation to obtain SiO with a particle size of 300-500nm 2 Microspheres;

[0058] Step 3, SiO 2 @TiO 2 Preparation of core-shell microspheres: Measure 1mL tetrabutyl titanate and 80mL absolute ethanol, seal and stir evenly at room temperature; take the SiO prepared in ste...

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Abstract

The invention belongs to the field of photocatalytic thin films and in particular relates to an embedded type TiO2 hollow sphere / GaN / Ga2O3 heterojunction photocatalytic thin film and a preparation method thereof. The embedded type TiO2 hollow sphere / GaN / Ga2O3 heterojunction photocatalytic thin film is prepared from ITO (Indium Tin Oxide) transparent conducing glass, a beta-Ga2O3 thin film locatedon the ITO transparent conducing glass, a GaN thin film located on the beta-Ga2O3 thin film, a beta-Ga2O3 / GaN heterojunction thin film located between the beta-Ga2O3 thin film and the GaN thin film and a TiO2 hollow sphere embedded in the beta-Ga2O3 / GaN heterojunction thin film. The photocatalytic thin film provided by the invention has a three-dimensional space multi-phase heterojunction interface structure and comprises a TiO2 / Ga2O3 heterojunction interface, a TiO2 / GaN heterojunction interface, a GaN / Ga2O3 heterojunction interface and a TiO2 / GaN / Ga2O3 heterojunction interface; the heterojunction interfaces have a mutual synergistic effect and photon-generated carriers can be effectively separated so that the photocatalytic performance of the material is greatly improved; the photocatalytic efficiency of degrading Rhodamine B is high and the photocatalytic efficiency keeps constant after a plurality of times of circulation; the embedded type TiO2 hollow sphere / GaN / Ga2O3 heterojunctionphotocatalytic thin film provided by the invention has stable performance and has a very great application prospect in the field of photocatalytic degradation of organic pollutants.

Description

technical field [0001] The invention belongs to the field of photocatalytic thin films, in particular to an embedded TiO 2 Hollow sphere / GaN / Ga 2 o 3 Heterojunction photocatalytic thin film and its preparation method. technical background [0002] With the rapid development of modern industry, the problem of water environment pollution is becoming more and more serious, which poses a serious threat to the growth and reproduction of animals and plants, as well as human health and living environment. Especially in areas where textile printing and dyeing enterprises are densely populated, the situation of high consumption, high emissions, and low efficiency has not been fundamentally improved, and textile printing and dyeing wastewater is the main source of pollution. Therefore, it is an important task in the field of environmental protection to establish efficient, environmentally friendly and low-cost treatment methods for organic dye wastewater. At present, the methods o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/06B01J37/02B01J37/34B01J37/10B01J37/08C02F1/30C02F103/30
CPCC02F1/30B01J27/24B01J37/0215B01J37/0238B01J37/088B01J37/10B01J37/343C02F2103/30C02F2305/10B01J35/59B01J35/39
Inventor 张香丽
Owner 东营睿港招商服务有限责任公司
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