A kind of sapphire crystal brick polishing method

Abstract

The invention provides a sapphire crystal brick polishing method. According to the sapphire crystal brick polishing method, firstly, polishing is conducted at a low pressure, low rotating speed and large flow in the first polishing step, so that sharp parts on the surface of a crystal brick are removed, and broken edges of the crystal brick and scratches of a polishing disc are reduced; secondly,removal polishing is conducted at a high pressure, medium rotating speed and properly-lowered flow in the second polishing step, so that the probability of incomplete polishing is lowered, and accordingly the surface of the sapphire crystal brick polished in the first step is smoother; and finally, the third polishing step is conducted at a low pressure and high rotating speed, and thus the smoothness of the polished surface of the crystal brick is ensured. Through the sapphire crystal brick polishing method, the surface of the sapphire crystal brick can be made transparent and has the effectof a mirror surface, a platform is provided for defect detection of the crystal brick, and the machining cost of the subsequent section is reduced; and defective material flow is effectively preventedcirculating to the subsequent procedure, and waste of machines, labor and auxiliary materials is reduced. In addition, in the polishing process, scratches, broken edges and cracks of the polishing disc are avoided; and the polishing method is also suitable for polishing nonmetal bricks made of aluminum oxide, zirconium oxide ceramic and the like.

Description

technical field [0001] The invention relates to the technical field of sapphire polishing, in particular to a method for polishing sapphire crystal bricks. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms in the form of covalent bonds. Its crystal structure is a hexagonal lattice structure. It is often used in A-Plane, C-Plane, M-Plane and R-Plane. Due to the wide optical penetration band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared, so it is widely used in optical components, infrared devices, high-strength laser lens materials and As for the mask material, it has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045°C), etc. It is a very difficult material to process. [0003] Artificially grown sapphire has good wear r...

AI Technical Summary

Problems solved by technology

However, artificially grown sapphire crystal ingots have many bad defects such as air bubbles, impurities, and grain boundaries. The processed sapphire crystal bricks have a frosted surface after being formed by a grinder. It is difficult to see the internal defects directly with the naked eye. After the crystal tiles are cut into wafers, the wafers can only be screened after polishing. Due to the high cost of sapphire processing auxiliary materials, the processing of defective parts causes a lot of cost waste

[0004] In the prior art, there are few polishing solutions for sapphire crystal tiles. Chinese patent 201310605267.9 discloses a method for polishing both sides of a sapphire touch panel. The solution mainly involves polishing the sapphire panel, and the polishing steps are mainly divided into two steps. Firstly, polish with high pressure, high speed, large particle size, and high flow, and then use low pressure, low speed, small particle size, and low flow for fine polishing. In this plan, the first step uses high speed, large Particle size, large flow rate for polishing, in the case of high speed and large particle size, the sharp part of the surface of the sapphire touch panel blank is easy to scratch the polishing disc, and the sapphire touch panel is relatively thin (thickness within 5mm, mass within 50g) ), it is prone to chipping and cracks and scrapped

In addition, in the two polishing steps of this scheme, the abrasive particle sizes in the polishing liquid are different. During the polishing process, the polishing liquid needs to be replaced once. The polishing process is discontinuous, and the polishing efficiency is difficult to guarantee.

Images