Manufacturing and epitaxial method for semiconductor pattern substrate

Abstract

The invention belongs to the field of a semiconductor, and discloses a manufacturing and epitaxial method for a semiconductor pattern substrate. A layer of zinc oxide ZnO is grown on a sapphire substrate and the like; next, a mongolian yurt-shaped ZnO pattern is manufactured to expose the sapphire; then, an AlN protection layer is grown by a physical vapor deposition (PVD) method and the like; andthe ZnO below the protection layer is removed or partially removed through a reaction via high-temperature hydrogen or ammonia gas, and the reserved AlN is a hollow mongolian yurt. By virtue of the method, the thermal stress between AlGaInN and the sapphire can be greatly buffered, so that stress caused by expansion coefficient difference between the sapphire and AlGaInN can be lowered, and malposition of AlGaInN can be greatly lowered, thereby improving crystal quality; a GaN monocrystal substrate can be replaced and the manufacturing cost of the chip can be lowered; and civil application ofAlGaInN-based LED, electronic and microwave devices can be facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a method for manufacturing and epitaxy of a semiconductor pattern substrate. Background technique [0002] Wide bandgap semiconductor materials such as aluminum gallium indium nitride (AlGaInN) have been widely used in the field of semiconductor lighting. For example, AlGaInN-based semiconductor light-emitting diodes can be applied to instrument working status indication, traffic lights, large-screen display, lighting and so on. Recently, AlGaInN-based ultraviolet has been initially applied, and power electronics and microwave devices have been initially applied in military radar, but there are some problems. [0003] In summary, the problems in the prior art are: [0004] There is a collapse effect in existing electronic devices, and there is no suitable low-cost substrate that can epitaxially grow high-quality AlGaInN, and GaN single crystal substrates are expensive, which is di...

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Problems solved by technology

[0004] There is a collapse effect in existing electronic devices, and there is no suitable low-cost substrate that can epitaxially grow high-quality AlGaInN, and GaN single crystal substrates are expensive, which is difficult to accept in the civilian market; current sapphire, silicon substrates and silicon carbide substrates It is the most widely used substrate for epitaxial growth of AlGaInN thin films. However, due to the differences in lattice constants and thermal expansion coefficients between substrates such as sapphire and epitaxial layers such as AlGaInN, problems such as lattice mismatch and thermal adaptation, resulting in dislocations and cracks, are very difficult. It is difficult to obtain high-quality AlGaInN single crystal thin films

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