PERC polysilicon solar cell and preparation method thereof
A technology of solar cells and polycrystalline silicon, applied in the field of solar cells, can solve the problems of high surface recombination, rough surface, inability to effectively improve cell efficiency, etc.
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specific Embodiment approach
[0059] The specific implementation includes the following three parts: a silicon wafer containing an inverted quadrangular pyramid suede structure and a texturing method, a PERC solar cell containing the aforementioned suede structure silicon wafer and a preparation method thereof, and a performance test of the PERC solar cell. Among them, the use of silicon wafers with inverted quadrangular pyramid group suede structure as the substrate to prepare PERC cells is the most important contribution of the present invention to the prior art, which breaks through the prior art using only coating, printing and other processes. Modification of the limitations of solar cell structure.
[0060] (1) Silicon wafer texture structure of PERC solar cell of the present invention and its texture making method
[0061] In the current prior art, the typical suede structure of polycrystalline silicon wafers used in PERC solar cells is an inverted pyramid structure, which is an inverted quadrangular pyr...
Embodiment 1
[0092] Polycrystalline silicon wafers are used as the base material for cleaning and texturing, so that the surface of the silicon wafer contains the suede structure of the inverted quadrangular pyramid group, diffuses to form PN junctions, etches and removes the edge junctions, and polishes the back side; prepare a passivation film on the front side of the silicon wafer; The back side of the wafer is first deposited with a 5nm thick aluminum oxide passivation film at 180°C by atomic layer deposition (ALD); after annealing at 400°C for 20 minutes, a silicon nitride film is deposited; a laser is used to open the back film to make aluminum The layer corrodes the back thin film, and the aluminum layer contacts the silicon wafer through the opening to obtain the PERC1 solar cell.
[0093] Among them, the texturing process is as follows:
[0094] 1) Treat with HF and HNO3 mixed solution at 8±1℃ for 3min.
[0095] 2) Place the polycrystalline silicon wafer in an acid texturing solution, p...
Embodiment 2
[0098] Polycrystalline silicon wafers are used as the base material for cleaning and texturing, so that the surface of the silicon wafer contains the suede structure of the inverted quadrangular pyramid group, diffuses to form PN junctions, etches and removes the edge junctions, and polishes the back side; prepare a passivation film on the front side of the silicon wafer; The back side of the wafer is first deposited with a 5nm thick aluminum oxide passivation film at 190°C by atomic layer deposition (ALD); after annealing at 400°C for 30 minutes, a silicon nitride film is deposited; the back side film is opened with a laser to make aluminum The layer corrodes the back film, and the aluminum layer contacts the silicon wafer through the opening to obtain the PERC2 solar cell.
[0099] Among them, the texturing process is as follows:
[0100] 1) Use 10wt% KOH solution to treat at 85°C for 150s.
[0101] 2) Place the polycrystalline silicon wafer in an acid texturing liquid, perform on...
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