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PERC polysilicon solar cell and preparation method thereof

A technology of solar cells and polycrystalline silicon, applied in the field of solar cells, can solve the problems of high surface recombination, rough surface, inability to effectively improve cell efficiency, etc.

Active Publication Date: 2018-02-23
北京普扬科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The porous suede structure can form a graded refractive index layer between the air and the silicon matrix, thereby improving the antireflection performance. However, due to the large surface area and rough surface, many defects are unnecessarily introduced, and the surface recombination is relatively high. , can not effectively improve the battery efficiency

Method used

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  • PERC polysilicon solar cell and preparation method thereof
  • PERC polysilicon solar cell and preparation method thereof
  • PERC polysilicon solar cell and preparation method thereof

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specific Embodiment approach

[0059] The specific implementation includes the following three parts: a silicon wafer containing an inverted quadrangular pyramid suede structure and a texturing method, a PERC solar cell containing the aforementioned suede structure silicon wafer and a preparation method thereof, and a performance test of the PERC solar cell. Among them, the use of silicon wafers with inverted quadrangular pyramid group suede structure as the substrate to prepare PERC cells is the most important contribution of the present invention to the prior art, which breaks through the prior art using only coating, printing and other processes. Modification of the limitations of solar cell structure.

[0060] (1) Silicon wafer texture structure of PERC solar cell of the present invention and its texture making method

[0061] In the current prior art, the typical suede structure of polycrystalline silicon wafers used in PERC solar cells is an inverted pyramid structure, which is an inverted quadrangular pyr...

Embodiment 1

[0092] Polycrystalline silicon wafers are used as the base material for cleaning and texturing, so that the surface of the silicon wafer contains the suede structure of the inverted quadrangular pyramid group, diffuses to form PN junctions, etches and removes the edge junctions, and polishes the back side; prepare a passivation film on the front side of the silicon wafer; The back side of the wafer is first deposited with a 5nm thick aluminum oxide passivation film at 180°C by atomic layer deposition (ALD); after annealing at 400°C for 20 minutes, a silicon nitride film is deposited; a laser is used to open the back film to make aluminum The layer corrodes the back thin film, and the aluminum layer contacts the silicon wafer through the opening to obtain the PERC1 solar cell.

[0093] Among them, the texturing process is as follows:

[0094] 1) Treat with HF and HNO3 mixed solution at 8±1℃ for 3min.

[0095] 2) Place the polycrystalline silicon wafer in an acid texturing solution, p...

Embodiment 2

[0098] Polycrystalline silicon wafers are used as the base material for cleaning and texturing, so that the surface of the silicon wafer contains the suede structure of the inverted quadrangular pyramid group, diffuses to form PN junctions, etches and removes the edge junctions, and polishes the back side; prepare a passivation film on the front side of the silicon wafer; The back side of the wafer is first deposited with a 5nm thick aluminum oxide passivation film at 190°C by atomic layer deposition (ALD); after annealing at 400°C for 30 minutes, a silicon nitride film is deposited; the back side film is opened with a laser to make aluminum The layer corrodes the back film, and the aluminum layer contacts the silicon wafer through the opening to obtain the PERC2 solar cell.

[0099] Among them, the texturing process is as follows:

[0100] 1) Use 10wt% KOH solution to treat at 85°C for 150s.

[0101] 2) Place the polycrystalline silicon wafer in an acid texturing liquid, perform on...

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Abstract

The invention relates to a PERC polysilicon solar cell, which relates to a PERC solar cell with polysilicon sheets having a superposing inverted rectangular pyramid textured structure as base material. The invention also relates to a preparation method of the PERC polysilicon solar cell, which belongs to the technical field of solar cells. The invention provides a PERC polysilicon solar cell. Thesurface of a silicon chip is randomly distributed with an inverted rectangular pyramid set, which includes two or a plurality of inverted rectangular pyramids, at least partially and mutually superposing. The inverted rectangular pyramid set also comprises a combination of partially-superposing inverted rectangular pyramids and cuboids, wherein the cuboids are superposing along the direction parallel with the center line of the inverted rectangular pyramid. With the silicon chips having textured structures as the base material, the transition efficiency of the PERC cells can be improved.

Description

Technical field [0001] The invention relates to a polycrystalline silicon solar cell and a preparation method thereof, in particular to a PERC polycrystalline silicon solar cell using a polycrystalline silicon sheet containing a superimposed inverted quadrangular pyramid texture structure as a substrate and a preparation thereof, and belongs to the technical field of solar cells. Background technique [0002] Solar cell, also known as photovoltaic cell, is a device that can directly convert solar energy into electrical energy. Its power generation principle is based on the photovoltaic effect of semiconductor PN junction. Since the direct conversion of solar energy will not cause environmental pollution, and the use of renewable energy sources, solar cells are a kind of clean energy with broad development prospects in today's energy shortage situation. [0003] Partial contact back passivation (PERC) solar cell is a newly developed high-efficiency solar cell, which was first develo...

Claims

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Application Information

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IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 陈伟吴俊桃陈全胜赵燕王燕刘尧平徐鑫杜小龙
Owner 北京普扬科技有限公司