Composite-window-layer cadmium-telluride film solar cell and preparing method thereof

A solar cell and window layer technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as the reduction of photoelectric conversion efficiency, the loss of electrons or carriers between the cadmium sulfide window layer and the substrate, and the impact on current density.

Inactive Publication Date: 2018-02-27
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, one of the main problems in the current cadmium telluride thin film battery is that the cross section between the cadmium sulfide window layer and the substrate will cause the loss of electrons or carriers, which will affect its current density and reduce its photoelectric conversion efficiency.

Method used

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  • Composite-window-layer cadmium-telluride film solar cell and preparing method thereof
  • Composite-window-layer cadmium-telluride film solar cell and preparing method thereof

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preparation example Construction

[0030] Its preparation method comprises the following steps:

[0031] (1) AZO glass doped with aluminum zinc oxide is used as the substrate layer, and a layer of indium-doped zinc oxide is deposited as a window transition layer on the substrate layer, and then annealed, and the deposition method is magnetron sputtering or sol-gel glue method; (2) adopt space sublimation method to deposit cadmium sulfide window layer on described window transition layer; (3) adopt space sublimation method to deposit cadmium telluride light absorbing layer on described cadmium sulfide window layer, use CdCl 2 Carry out activation treatment, then annealing treatment; (4) adopt magnetron sputtering method to deposit back contact layer on described cadmium telluride light absorbing layer; (5) adopt magnetron sputtering method to deposit back contact layer on described back contact layer electrode layer.

Embodiment 1

[0034] like figure 1As shown, a cadmium telluride thin-film battery with a composite window layer is sequentially provided with an aluminum-doped zinc oxide AZO glass substrate layer, an indium-doped zinc oxide window transition layer, a cadmium sulfide window layer, a cadmium telluride light-absorbing layer, and a telluride Zinc and copper-doped zinc telluride composite thin film back contact layer, nickel molybdenum thin film back electrode layer.

[0035] Among them, the thickness of the substrate layer is 50nm, the thickness of the indium-doped zinc oxide transition layer is 50nm, the thickness of the cadmium sulfide layer is 100nm, the thickness of the cadmium telluride thin film layer is 2μm, the thickness of the back contact layer is 20nm, and the thickness of the back electrode layer The thickness is 100nm.

[0036] The preparation method of the above-mentioned cadmium telluride thin film battery comprises the following steps:

[0037] (1) Use aluminum-zinc oxide-dop...

Embodiment 2

[0046] like figure 1 As shown, a cadmium telluride thin-film battery with a composite window layer is sequentially provided with an aluminum-doped zinc oxide AZO glass substrate layer, an indium-doped zinc oxide window transition layer, a cadmium sulfide window layer, a cadmium telluride light-absorbing layer, and a telluride Zinc and copper-doped zinc telluride composite thin film back contact layer, nickel molybdenum thin film back electrode layer.

[0047] Among them, the thickness of the substrate layer is 100nm, the thickness of the indium-doped zinc oxide transition layer is 100nm, the thickness of the cadmium sulfide layer is 200nm, the thickness of the cadmium telluride thin film layer is 3μm, the thickness of the back contact layer is 50nm, and the thickness of the back electrode layer The thickness is 200nm.

[0048] The preparation method of the above-mentioned cadmium telluride thin film battery comprises the following steps:

[0049] (1) Use AZO glass doped with...

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Abstract

The invention discloses a composite-window-layer cadmium-telluride film solar cell and a preparing method thereof. The solar cell is sequentially provided with a substrate layer, a composite window layer, a light absorption layer, a back contact layer and a back electrode layer, wherein the composite window layer comprises an indium-doped zinc-oxide window transition layer and a cadmium-sulfide window layer; in the cell, AZO glass of aluminum-doped zinc oxide serves as a substrate, and indium-doped zinc oxide serves as the window transition layer, so that combination between the cadmium-sulfide window layer and the aluminum-doped zinc oxide substrate is enhanced; interface carrier loss is reduced, the high current density is obtained, the thickness and the dosage of the cadmium sulfide layer are decreased, the light transmittance rate is enhanced, and the capturing rate of light is improved.

Description

technical field [0001] The invention relates to the field of thin-film solar cells, in particular to a cadmium telluride thin-film solar cell with a composite window layer and a preparation method thereof. Background technique [0002] With the development of solar cells, the second-generation compound thin-film solar cells have long been a research hotspot, and it is believed that thin-film solar cell technology can reduce manufacturing costs and prolong battery life. As one of the typical representatives, cadmium telluride thin film battery has attracted the interest of many enterprises and research institutions. Cadmium telluride thin film battery has many advantages: ideal band gap (1.45eV), and its spectral response range is very matched with solar spectrum; high light absorption rate, 1μm thick absorption layer can absorb 99% of photons; high Photoelectric conversion efficiency, theoretically, the conversion efficiency of the battery can reach about 30%; the battery p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/068H01L31/18
CPCH01L31/022441H01L31/022483H01L31/035272H01L31/0682H01L31/1836Y02E10/547Y02P70/50
Inventor 彭寿马立云潘锦功殷新建文秋香
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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