Modified g-C3N4 based visible light catalyst, and preparation method and application thereof

A photocatalyst and visible light technology, applied in the field of photocatalytic materials, can solve the problems of high cost, low utilization rate of visible light, increase of visible light response range, etc., and achieve the effect of large output, increased visible light response range and excellent performance

Active Publication Date: 2018-03-02
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the above defects or improvement needs of the prior art, the present invention provides a modified g-C 3 N 4 Based visible light photocatalyst, its preparation method and application, its purpose is to adopt NaBH 4 Reduction method for g-C 3 N 4 Modification of the base to change its band gap width and position, thereby increasing its response range to visible light, and by changing its valence band and conduction band position, so that it can photocatalytically oxidize water and reduce dissolved oxygen in water to produce hydrogen peroxide , thereby solving the prior art on g-C 3 N 4 Although modification can improve its photocatalytic performance, the cost is high, and the technical problem of low utilization rate of visible light cannot be fundamentally changed.

Method used

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  • Modified g-C3N4 based visible light catalyst, and preparation method and application thereof
  • Modified g-C3N4 based visible light catalyst, and preparation method and application thereof
  • Modified g-C3N4 based visible light catalyst, and preparation method and application thereof

Examples

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Embodiment 1

[0045] A modified g-C 3 N 4 A preparation method for a visible light-based photocatalyst, comprising the steps of: the photocatalyst is a visible light-responsive g-C 3 N 4 base photocatalyst.

[0046] (1) Preparation of precursor

[0047] Put melamine into a muffle furnace, heat up at a rate of 3°C / min, and burn at 450°C for 4 hours to polymerize melamine at high temperature to form a semiconductor material g-C with a wide band gap tris-triazine structure 3 N 4 , and then washed and dried to remove other substances in the system.

[0048] (2) Preparation of reducing materials

[0049] The material obtained in (1) was mixed with NaBH 4 According to the mass ratio of 1:5, it is mixed and ground into a tube furnace, reduced for 30 minutes under nitrogen at 370°C, washed with water for 3 times, and dried to obtain the modified g-C 3 N 4 base photocatalyst.

[0050] Carry out result analysis to the photocatalyst prepared in this embodiment: the g-C mentioned below 3 N ...

Embodiment 2

[0065] A modified g-C 3 N 4 A preparation method for a visible light-based photocatalyst, comprising the steps of: the photocatalyst is a visible light-responsive g-C 3 N 4 base photocatalyst.

[0066] (1) Preparation of precursor

[0067] Put melamine into a muffle furnace, heat up at a rate of 15°C / min, and burn at 400°C for 4 hours to polymerize melamine at high temperature to form a semiconductor material with a wide band gap g-C 3 N 4 , and then washed and dried to remove other substances in the system.

[0068] (2) Preparation of reducing materials

[0069] The material obtained in (1) was mixed with NaBH 4 According to the mass ratio of 1:2, put it into a tube furnace after mixing and grinding, and reduce it under nitrogen at 400°C for 40 minutes, then wash the reduced material for 3 times, and dry it to obtain the modified g-C 3 N 4 base photocatalyst.

Embodiment 3

[0071] A modified g-C 3 N 4 A preparation method for a visible light-based photocatalyst, comprising the steps of: the photocatalyst is a visible light-responsive g-C 3 N 4 base photocatalyst.

[0072] (1) Preparation of precursor

[0073] Put melamine into a muffle furnace, heat up at a rate of 5°C / min, and burn at 500°C for 4 hours to polymerize melamine at high temperature to form a semiconductor material with a wide band gap g-C 3 N 4 , and then washed and dried to remove other substances in the system.

[0074] (2) Preparation of reducing materials

[0075] The material obtained in (1) was mixed with NaBH 4 Mix and grind according to the mass ratio of 1:6, put it into a tube furnace, reduce it under nitrogen at 300°C for 20 minutes, wash the reduced material three times, and dry it to obtain the modified g-C 3 N 4 base photocatalyst.

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Abstract

The invention discloses a modified g-C3N4 based visible light catalyst, and a preparation method and an application thereof; a purpose comprises that a g-C3N4 base is modified by using a NaBH4 reduction method, and a band gap width and position are changed, so the response range to visible light is increased, and through changing of positions of a valence band and a conduction band, the catalyst can perform photocatalytic oxidation of water and reduces dissolved oxygen in the water to produce hydrogen peroxide; therefore, the technical problems in the prior art that modification of g-C3N4 canimprove the photocatalytic performance but has high cost, and low visible light utilization rate cannot be fundamentally changed are solved.

Description

technical field [0001] The invention relates to the field of photocatalytic materials, in particular to g-C 3 N 4 Modified g-C 3 N 4 Based photocatalysts and preparation methods. Background technique [0002] Since 1989, Liu and Cohen of the University of California theoretically proposed β-C 3 N 4 Since covalent crystals, nitrogen carbides have therefore received extensive attention from scientists in the field of photocatalysis. In 1989, A.Y.Liu and M.L.Cohen based on the β-Si 3 N 4 The crystal structure of β-C is theoretically predicted by the first-order pseudopotential band method under the local density of state approximation by replacing Si with C 3 N 4 (That is, carbon nitride) This hardness is comparable to that of diamond and is a new covalent compound that has not been found in nature. In 1996, Teter and Hemley calculated that C 3 N 4 There may be five structures, namely α phase, β phase, cubic phase, quasi-cubic phase and graphite-like phase, among whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J37/16C07C407/00C07C409/26
CPCC07C407/00B01J27/24B01J37/16B01J35/39C07C409/26
Inventor 张延荣朱泽东
Owner HUAZHONG UNIV OF SCI & TECH
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