Preparation method of single crystal indium nanowire and its products and applications

A crystalline indium nanometer and indium nanometer technology, which is applied in the field of nanomaterial preparation, can solve the problems of complex process, poor quality of indium nanowires and high cost, and achieve the effects of simple preparation process, good repeatability and low price.

Active Publication Date: 2020-02-21
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

(Synthesis of Indium Nanowires by Galvanic Displacement and Their Optical Properties. Nanoscale Research Letters 4, 47-53, 2009) However, these preparation schemes all have the following problems: the process is complicated, the cost is high, and the quality of the generated indium nanowires is poor, which cannot be carried out. mass production

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  • Preparation method of single crystal indium nanowire and its products and applications
  • Preparation method of single crystal indium nanowire and its products and applications

Examples

Experimental program
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Effect test

Embodiment 1

[0029] A method for preparing single crystal indium nanowires, comprising the following steps:

[0030] (1) First polish the cut zinc sheet with 3000 mesh sandpaper to remove the oxide layer on the surface; then wash it with acetone, absolute ethanol, and deionized water for 10 minutes, dry it with an air gun, and then put it into the reaction substrate as a base in the tank;

[0031] (2) Mix thioacetamide and indium chloride into the reaction kettle according to the molar ratio of 4:2, then add ethylene glycol, and then stir or ultrasonically dissolve to form a uniform solution with an indium salt concentration of 0.2M ;

[0032] (3) Seal the reactor, control the temperature at 200°C, and react for 30 minutes; after the reaction, the reactor is naturally cooled to room temperature, and the samples are taken out and washed and dried to obtain single crystal indium nanowires grown uniformly on the zinc sheet.

[0033] figure 1 It is the XRD pattern of the single crystal indi...

Embodiment 2

[0036] A method for preparing single crystal indium nanowires, comprising the following steps:

[0037] (1) First polish the cut zinc sheet with 3000 mesh sandpaper to remove the oxide layer on the surface; then wash it with acetone, absolute ethanol, and deionized water for 10 minutes, dry it with an air gun, and then put it into the reaction substrate as a base in the tank;

[0038] (2) Mix thiourea and indium chloride into the reaction kettle according to the molar ratio of 2:2, then add ethylene glycol, and then stir or ultrasonically dissolve to form a uniform solution with an indium salt concentration of 0.4M;

[0039] (3) Seal the reactor, control the temperature at 160°C, and react for 40 minutes; after the reaction, the reactor is naturally cooled to room temperature, and the samples are taken out and washed and dried to obtain single crystal indium nanowires grown uniformly on the zinc sheet.

Embodiment 3

[0041] A method for preparing single crystal indium nanowires, comprising the following steps:

[0042] (1) First polish the cut zinc sheet with 3000 mesh sandpaper to remove the oxide layer on the surface; then wash it with acetone, absolute ethanol, and deionized water for 10 minutes, dry it with an air gun, and then put it into the reaction substrate as a base in the tank;

[0043] (2) Mix thioacetamide and indium acetate into the reaction kettle according to the molar ratio of 6:2, then add ethylene glycol, and then stir or ultrasonically dissolve to form a uniform solution with an indium salt concentration of 0.6M;

[0044](3) Seal the reactor, control the temperature at 220°C, and react for 20 minutes; after the reaction, the reactor is naturally cooled to room temperature, and the samples are taken out and washed and dried to obtain single crystal indium nanowires grown uniformly on the zinc sheet.

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Abstract

The invention relates to a preparation method of a single crystal indium nanowire as well as a product and application thereof. According to the preparation method, a zinc sheet and an indium source are taken as precursors, a sulfur source is taken as an adjuvant, and a single crystal indium nanowire wrapped by a sulfide layer can be prepared by controlling temperature and time of solvothermal. The preparation method provided by the invention has the advantages that the length of single crystal indium nanowires prepared in a large scale by virtue of a solvothermal method is 100-300 mum, the average diameter is about 200nm, and length-diameter ratio is extremely high; meanwhile, the preparation process has the advantages of simplicity, safety, reliability, no toxicity, no pollution, relatively low cost and good repeatability; and the generated indium nanowire can be further synthesized into semiconductors such as In2O3, In2S3, InP and InAs after sulfide on the surface is removed throughcorrosion by virtue of hydrochloric acid, and the compounds have a broad application prospect in the fields of manufacturing of various alloys, synthesis of semiconductor materials and infrared detectors.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and relates to a method for preparing single crystal indium nanowires and its products and applications, in particular to a method for preparing single crystal indium nanowires through solvothermal mass synthesis. Background technique [0002] In recent years, the study of nanoscale (1-100 nm in size) materials has aroused great interest. Due to the reduction of the size of the material, the structure of the nanomaterial changes, resulting in a quantum size effect, which changes the energy band structure, and increases the specific surface area of ​​the material, resulting in changes in its melting point, magnetic properties, and chemical catalytic activity. Because of their special properties different from their macroscopic materials, nanoscale materials have a wide range of potential applications in the fields of electronic devices, photonic devices, and biomedicine. As one-d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/60C30B29/02C30B7/14
CPCC30B7/14C30B29/02C30B29/60
Inventor 何丹农卢静涂兴龙金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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