Particles, connecting material and connection structure

A technology for connecting materials and particles, applied in the direction of connection, welding/cutting media/materials, conductive materials, etc., can solve the problems of increased surface area, lower melting point or sintering temperature, etc., to suppress uneven thickness, improve connection strength, The effect of suppressing cracks or peeling

Active Publication Date: 2018-03-27
SEKISUI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In addition, it is known that when the particle size of metal particles is as small as 100nm or less, and the number of constituent atoms decreases, the surface area ratio to the particle volume increases sharply, and the melting point or sintering temperature decreases significantly compared to the bulk state.

Method used

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  • Particles, connecting material and connection structure
  • Particles, connecting material and connection structure
  • Particles, connecting material and connection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0187] (1) Production of silicone oligomers

[0188] Put 1 part by weight of 1,3-divinyltetramethyldisiloxane (the amount to be the weight % in the table) and 0.5% by weight of p-toluenesulfonic acid into a 100 ml separate flask set in a warm bath 20 parts by weight of aqueous solution. After stirring at 40° C. for 1 hour, 0.05 parts by weight of sodium bicarbonate was added. Then, 30 parts by weight of dimethyldimethoxysilane (the amount to be the weight % in the table) and 30 parts by weight of methylvinyldimethoxysilane (the amount to be the weight % in the table) were added, and 1 Stir for an hour. Then, 1.9 parts by weight of a 10% by weight potassium hydroxide aqueous solution was added, the temperature was raised to 85° C., and the mixture was stirred for 10 hours while decompressing with an aspirator to perform a reaction. After the reaction, return to normal pressure and cool to 40° C., add 0.2 parts by weight of acetic acid, and place still in the separatory funne...

Embodiment 2～9、15～21、24

[0197] (Examples 2 to 9, 15 to 21, 24 and Comparative Examples 1 and 2)

[0198] In addition to changing the silicone monomer used in the preparation of silicone oligomers as shown in Tables 1 and 2, changing the pore size of SPG as shown in Tables 1 and 2, and changing the particles and linking materials as shown in Tables 1 and 2 Except for the configuration, in the same manner as in Example 1, particles X, a connecting material, and a bonded structure were produced.

[0199] In addition, in Examples 20 and 21, the particle|grains which have a conductive part shown in Table 2 were produced.

Embodiment 25

[0201] Dispersion C of Example 1 was prepared.

[0202] With respect to 100 parts by weight of the particles in the dispersion C, 1 part by weight of methyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd. "KBM-13") was added so that the concentration of ammonia after the addition became 1% by weight. Aqueous ammonia solution was added in a small amount, stirred at room temperature for 24 hours, and washed with water to obtain substrate particles. The obtained substrate particles were subjected to a classification operation to obtain Particle X.

[0203] Except having used the obtained particle|grains X, it carried out similarly to Example 1, and produced the connection material and connection structure.

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Abstract

Particles are provided which, in a connection portion that connects two members to be connected, can suppress the occurrence of cracking and peeling during a hot-cold cycle, can further suppress thickness variation in the connection portion, and can improve connection strength. These particles are particles used to obtain a connecting material for forming the connection portion that connects two members to be connected. The particles are used in order to form a connection portion such that the thickness of the connection portion after connection is less than or equal to twice the average particle diameter of the particles before connection, or, the particles have an average particle diameter of 1-300[mu]m, the particles have a 10% K value of 30-3000 N / mm2 and the particles have a particlediameter CV value of 10% or less.

Description

technical field [0001] The present invention relates to particles for obtaining a connecting material used to form a connecting portion connecting two members to be connected. The present invention also relates to a connection material and a connection structure using the above particles. Background technique [0002] In a non-insulated semiconductor device that is one of power semiconductor devices used in an inverter (inverter) or the like, the member that fixes the semiconductor element is also one of the electrodes of the semiconductor device. For example, in a semiconductor device in which a power transistor is mounted on a fixed member using a Sn—Pb-based solder material, the fixed member (substrate) connecting two connection target members becomes a collector of the power transistor. [0003] In addition, it is known that when the particle size of metal particles is as small as 100 nm or less and the number of constituent atoms decreases, the surface area ratio to th...

Claims

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Application Information

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IPC IPC(8): C09J201/00B22F7/08B23K35/24C08F12/36C08F16/32C08F30/08C08F36/08C09J9/02C09J11/00C09J11/08H01B1/00H01B1/22H01B5/00H01R11/01B22F1/05B22F1/10B22F1/17
CPCB22F7/08C08F16/32C08F30/08C08F36/08C09J201/00H01B5/00H01R11/01B23K35/0244B22F7/064B23K35/262B23K35/3006B23K35/3013B23K35/302B23K35/3033H01B1/22B23K35/025B23K35/3613B22F1/05B22F1/17B22F1/10B23K35/24C08F12/36C09J9/02C09J11/08B22F2301/10B22F2301/15B22F2301/255B22F2301/30B22F2304/10C08F16/20C08G61/02C08G2261/3142C08G2261/3321H01L24/29H01L2224/29391H01L2224/29411H01L2224/29439H01L2224/29444H01L2224/29447H01L2224/29455H01L2224/29499H01L2924/0635H01L2924/35121
Inventor 山上舞羽根田聪胁屋武司山田恭幸上田沙织笹平昌男
Owner SEKISUI CHEM CO LTD
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