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Preparation method of Sn mono-atom modified NiO nanometer material for formaldehyde sensor as well as product and application thereof

A formaldehyde sensor and nanomaterial technology, which is applied in the field of single-atom modification to improve the gas-sensing performance of p-type semiconductor nanomaterials, can solve the problems of long response time and poor sensitivity, and achieves low preparation cost, simple preparation process, and improved gas sensitivity. performance effect

Active Publication Date: 2018-04-06
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, p-type semiconductors, where NiO plays an important role, have very important potential application value in the field of gas sensors, but compared with n-type semiconductors, p-type semiconductors generally have the problems of poor sensitivity and long response time. Through metal oxide surface modification, doping Other processes can improve the gas-sensing performance of materials

Method used

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  • Preparation method of Sn mono-atom modified NiO nanometer material for formaldehyde sensor as well as product and application thereof
  • Preparation method of Sn mono-atom modified NiO nanometer material for formaldehyde sensor as well as product and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Take 0.8mmol of Ni(NO 3 ) 2 ·6H 2 O, be dissolved in the mixed solution of 13mL deionized water and 87mL ethylene glycol, obtain solution A;

[0023] Premix 4 mmol of 2-methylimidazole with 40 mL of methanol and stir until 2-methylimidazole is completely dissolved; add 3.2 mmol of ammonium bicarbonate to obtain solution B;

[0024] Mix solution A and solution B, move the solution to a water bath at 50 °C, then stir for 2-5 h, then place it in a reaction kettle, react at 150 °C for 12 h, wait until the temperature drops to room temperature, centrifuge the sample, and use After repeated washing with deionized water and absolute ethanol for 3 times, the sample was dried in a drying oven to obtain a powder;

[0025] Take 10mL of ethanol and 10mL of ethylene glycol, add 1 drop of nitric acid, reduce the temperature of the solvent to zero, and then add 0.1mmol of anhydrous SnCl 4 After stirring for 10 min, 0.1 g of the above powder was added, placed in a muffle furnace, a...

Embodiment 2

[0028] Take 0.8mmol of Ni(NO 3 ) 2 ·6H 2 O, be dissolved in the mixed solution of 13mL deionized water and 87mL ethylene glycol, obtain solution A;

[0029] Premix 4 mmol of 2-methylimidazole with 40 mL of methanol and stir until 2-methylimidazole is completely dissolved; add 3.2 mmol of ammonium bicarbonate to obtain solution B;

[0030] Mix solution A and solution B, move the solution to a water bath at 50 °C, then stir for 2-5 h, then place it in a reaction kettle, react at 150 °C for 12 h, wait until the temperature drops to room temperature, centrifuge the sample, and use After repeated washing with deionized water and absolute ethanol for 3 times, the sample was dried in a drying oven to obtain NiO powder for later use;

[0031] Take 10mL of ethanol and 10mL of ethylene glycol, add 1 drop of nitric acid, reduce the temperature of the solvent to zero, and then add 0.1mmol of anhydrous SnCl 4 After stirring for 10 minutes, add 0.1g of NiO powder, stir for 30 minutes, p...

Embodiment 3

[0035] Take 0.5mmol of nickel chloride and dissolve it in a mixed solution of 10mL deionized water and 90mL ethylene glycol to obtain solution A;

[0036] Premix 4mmol of 1-methylimidazole with 20mL of methanol, stir until 1-methylimidazole is completely dissolved; add 1.5mmol of ammonium bicarbonate to obtain solution B;

[0037] Mix solution A and solution B, move the solution to a water bath at 30 °C, then stir for 2 h, then place it in a reaction kettle, react at 140 °C for 14 h, wait until the temperature drops to room temperature, centrifuge the sample, and use deionized After repeated washing with water and absolute ethanol twice, the sample was dried in a drying oven to obtain Ni(OH) 2 powder spare;

[0038] Take 16mL of ethanol and 4mL of ethylene glycol premixed, add 2 drops of nitric acid, reduce the temperature of the solvent to zero, and then add 0.2mmol of anhydrous SnCl 4 , after stirring for 20min, add 0.1g of Ni(OH) 2 The powder was stirred for 30 minutes, ...

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Abstract

The invention discloses a preparation method of Sn mono-atom modified NiO nanometer material for formaldehyde sensor as well as a product and application thereof. According to the preparation method,a hydrothermal method is utilized to synthesize the NiO nanometer material; then anhydrous SnCl4 is adsorbed on the surface of the NiO nanometer material in an organic solvent with addition of 1-2 drops of nitric acid to prevent the hydrolysis of SnCl4; the obtained mixture is premixed with a NiO powder at 0 DEG C to obtain a solution, then the solution is placed at 18 DEG C, and pretreated with alow temperature, making the system to have a large amount of vacancies; and then the solution is calcined at a high temperature of 450-550 DEG C, so that the Sn mono-atom modified NiO nanometer material is obtained. The method has the advantages that the preparation process is simple, the preparation cost is low; and the obtained Sn mono-atom modified NiO nanometer material has stable performance, can greatly improve gas sensitivity of p-type semiconductors, and has a broad application prospect.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a method for preparing a Sn single-atom modified NiO nanomaterial used in a formaldehyde sensor and its product and application, specifically to a single-atom modified NiO nanomaterial gas Sensitivity method. Background technique [0002] Metal oxides such as NiO, SnO 2 , ZnO, etc. are widely studied gas-sensing materials because of their excellent performance, environmental friendliness, abundant resources, and low price. Among them, p-type semiconductors, where NiO plays an important role, have very important potential application value in the field of gas sensors, but compared with n-type semiconductors, p-type semiconductors generally have the problems of poor sensitivity and long response time. Through metal oxide surface modification, doping And other processes can improve the gas-sensing performance of the material. [0003] The key factors that determine the sensit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G53/04G01N27/00
Inventor 何丹农葛美英孙健武尹桂林张芳金彩虹
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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