Carbon sphere-carbon nitride (C3N4) nanomaterial and preparation and application thereof

A nanomaterial, carbon nitride technology, applied in the field of environmental catalysis and nanomaterials, can solve the problems of narrow-band semiconductors prone to photocorrosion, unstable organic dye photosensitization, low absorption coefficient, etc. The effect of improved utilization and low cost of raw materials

Active Publication Date: 2018-04-10
ZHEJIANG GONGSHANG UNIVERSITY
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently on C 3 N 4 The modification methods mainly focus on the following three aspects: noble metal compounding, non-metal element doping and surface photosensitization, but the cost of noble metal compounding is high, and non-metal doped C 3 N 4 In the visible region, the absorption coefficient i

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon sphere-carbon nitride (C3N4) nanomaterial and preparation and application thereof
  • Carbon sphere-carbon nitride (C3N4) nanomaterial and preparation and application thereof
  • Carbon sphere-carbon nitride (C3N4) nanomaterial and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (1) Weigh 20 g of urea, place it in an alumina crucible, and cover it for calcination in an air atmosphere. Raise the temperature from room temperature to 550 °C at a heating rate of 4 °C / min, maintain at 550 °C for 2 hours, and cool down to room temperature naturally.

[0060] (2) Grinding and dissolving the cooled sample in 100 ml of water, and putting it into an ultrasonic pool for 12 hours of ultrasonication.

[0061] (3) Place the sample in a centrifuge with a rotating speed of 10000r / min, centrifuge for 5 minutes, and separate the supernatant.

[0062] (4) Repeat this step until the supernatant appears colorless (or slightly yellow), and repeat the centrifugation for a total of 4 times in this experiment.

[0063] (5) Preserve the precipitate for later use, freeze-dry for 13 hours to obtain sample C3N4.

[0064] (6) Dissolve 2g of C3N4 in 10ml of ethylenediamine, mix and stir evenly, and number it as solution 1.

[0065] (7) Dissolve 50mg of citric acid in 2ml ...

Embodiment 2

[0079] Slowly add 0.05g of glucose into 2ml of ethylene glycol solution, stir at room temperature and ultrasonically make it fully mixed; 3 N 4 Slowly add 10ml of ethylene glycol, stir at room temperature and sonicate to make it evenly mixed. The two mixed solutions were stirred at room temperature to fully mix to form a homogeneous solution. Add the mixed solution into a hydrothermal kettle, heat it to 200°C for 30min, and keep it at 200°C for 24h. After the reaction is completed, cool, centrifuge, and dry to obtain a powder sample.

[0080] figure 1 Pure C prepared for Example 1 3 N 4 and carbon sphere-C 3 N 4 The X-ray powder diffraction pattern; due to the carbon sphere loading in C 3 N 4 Surface, carbon sphere modified C 3 N 4 Due to the low carbon sphere content and high dispersion, no diffraction peak changes can be seen, indicating that the introduction of carbon photons will not change the C 3 N 4 chemical structure.

[0081] figure 2 Pure C prepared for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a carbon sphere-carbon nitride nanomaterial and preparation and application thereof. The spheres are loaded on the surface of the C3N4 in situ to form a composite two-dimensional layered structure, the mole ratio of the carbon spheres to the C3N4 is 0.025-0.1, and the preparation method includes the steps of 1, dissolving the C3N4 into an organic solvent, and evenly mixingto obtain a solution A; dissolving citric acid or glucose into a same organic solvent, and evenly mixing to obtain a solution B; 2, fully mixing the solution A and the solution B to form a homogeneoussolution for a hydrothermal reaction, after the hydrothermal reaction is completed, conducting centrifugation to collect precipitate, and conducting freeze drying to obtain the C3N4 material loaded with the carbon sphere in situ. The carbon sphere-carbon nitride nanomaterial is used for photocatalytic reduction of CO2.

Description

technical field [0001] The invention relates to a carbon sphere (carbon sphere) in-situ loaded C 3 N 4 The invention relates to a new type of organic semiconductor material, specifically relates to the preparation and application of this new type of nanometer material, and belongs to the field of environmental catalysis and nanometer material technology. Background technique [0002] Currently, photocatalytic materials produce hydrogen by decomposing water and reducing CO by light. 2 The formation of C-H fuels and other pathways can directly convert solar energy into chemical energy. Due to its convenience, cleanliness, and continuous generation of renewable and "carbon neutral" fuels, it is considered to be one of the best ways to convert and utilize solar energy in the future. , has attracted the attention of countless scientists all over the world and has been widely studied. Among them, C 3 N 4 As a new type of cheap, non-toxic and stable photocatalytic material, wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01J27/24B01J35/02B01J37/10C10G2/00
CPCB01J27/24B01J35/004B01J35/023B01J37/10C10G2/00Y02P30/40
Inventor 徐颖峰郭乔琪冯华军沈东升黄晶晶陈书鑫汤晨怡
Owner ZHEJIANG GONGSHANG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap