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Method for preparing tungsten ditelluride nanotubes

A tungsten ditelluride and nanotube technology, which is applied in the directions of binary selenium/tellurium compounds, nanotechnology, metal selenide/telluride, etc. The effect of uniform appearance, improved comprehensive performance and wide applicability

Active Publication Date: 2018-04-20
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But currently most of the information about WTe 2 The preparation of materials mainly focuses on bulk crystal materials or thin film materials, and there are few studies on the preparation of materials with one-dimensional nanostructures.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A preparation method of tungsten ditelluride nanotubes includes the following process steps:

[0018] 1) Pave 5g of tungsten hexacarbonyl on the bottom of the ceramic crucible, place a porous anodic aluminum oxide template with a pore size of 100nm on top of the tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and pass in 100SCCM of argon Purge the air in the furnace tube. Under the protection of 100SCCM of argon, heat up to 100°C and keep for 60min, then continue to heat up to 300°C and keep for 40min to obtain metal tungsten nanotube material, stop heating;

[0019] 2) After the tube furnace of step 1) is lowered to room temperature, take out the porous anodized alumina template and place its opening downward in a ceramic crucible containing tellurium powder. After sealing the crucible, place it in the tube furnace. Under the protection of 100SCCM of argon, heat up to 400℃ and keep for 120min, continue to heat up to 450℃ and keep for 150min, stop h...

Embodiment 2

[0022] A method for preparing tungsten ditelluride nanotubes includes the following process steps:

[0023] 1) Pave 5g of tungsten hexacarbonyl on the bottom of the ceramic crucible, place a porous anodic aluminum oxide template with a pore size of 100nm on top of the tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and pass in 100SCCM of argon Purge the air in the furnace tube. Under the protection of 100SCCM of argon, heat up to 50°C and keep for 200min, then continue to heat up to 300°C and keep for 40min to obtain metal tungsten nanotube material, stop heating;

[0024] 2) After the tube furnace of step 1) is lowered to room temperature, take out the porous anodized alumina template and place its opening downwards in a ceramic crucible containing tellurium powder. After sealing the crucible, place it in the tube furnace. Under the protection of 100SCCM of argon, heat up to 400℃ and keep for 120min, continue to heat up to 450℃ and keep for 150min, stop h...

Embodiment 3

[0027] A method for preparing tungsten ditelluride nanotubes includes the following process steps:

[0028] 1) Pave 5g of tungsten hexacarbonyl on the bottom of the ceramic crucible, place a porous anodic aluminum oxide template with a pore size of 200nm on top of tungsten hexacarbonyl, seal the crucible and place it in a tube furnace, and pass 10 SCCM of argon Purge the air in the furnace tube. Under the protection of 10SCCM of argon, heat up to 150°C and keep for 30min, then continue to heat up to 300°C and keep for 40min to obtain metal tungsten nanotube material, stop heating;

[0029] 2) After the tube furnace of step 1) is lowered to room temperature, take out the porous anodized alumina template and place its opening downwards in a ceramic crucible containing tellurium powder. After sealing the crucible, place it in the tube furnace. Under the protection of 10SCCM, the temperature is increased to 400°C and kept for 120min, then the temperature is increased to 450°C and kept...

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Abstract

The invention discloses a method for preparing tungsten ditelluride nanotubes. The method comprises the following steps: 1) laying tungsten hexacarbonyl to the bottom of a ceramic crucible, laying a porous anodic aluminum oxide mold plate with an opening facing downwards on the tungsten hexacarbonyl, sealing the ceramic crucible, putting into a tubular furnace, performing low-temperature sublimation deposition in the presence of a gas, and continuously performing heating pyrolysis; 2) cooling the vacuum tubular furnace to the room temperature, putting the mold plate with the opening facing downwards into a ceramic crucible with tellurium powder, sealing the ceramic crucible, heating in the presence of the gas, and enabling a single substance, namely tellurium, to react with a metal, namelytungsten, directly; 3) removing the excessive aluminum oxide mold plate and excessive tellurium by using a diluted acid solution, performing suction filtration treatment, and drying, thereby obtaining a finished product. The method disclosed by the invention is simple in step, free of environment pollution and free of complex equipment, a tungsten ditelluride nanotube powder material prepared byusing the method is good in size controllability, good in crystallinity and uniform in nanotube wall and morphology, and thus the comprehensive properties of a finished product of the tungsten ditelluride nanotube powder material are greatly improved. The method is wide in applicability and beneficial to large-scale industrial production.

Description

Technical field [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing semiconductor nanotubes. Background technique [0002] Tungsten Two Telluride (WTe 2 ) Is a transition metal chalcogenide compound with a layered structure. In its orthogonal unit cell, tungsten chains are distributed one-dimensionally along the a-axis direction of the tellurium layer. It is a non-magnetic semi-metallic material. In 2014, Princeton University professor Cava's research group discovered WTe 2 Under normal pressure, it has unsaturated large magnetoresistance (LMR) characteristics (Nature, 514 (2014) 205), that is, this material exhibits an abnormally large positive resistance effect under a magnetic field, and it does not have a very high magnetic field. saturation. This characteristic not only provides potential for its application in electronic devices, but also opens up a new direction for the research of large magnetoresistance mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2004/13
Inventor 胡柱东林海敏
Owner FOSHAN UNIVERSITY
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