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A kind of polishing liquid and its preparation method and application

A technology of polishing liquid and additives, which is applied in the field of solar cells, can solve the problems of unsatisfactory polishing effect, polishing speed, lower battery efficiency, and hinder the large-scale promotion of diamond wire-cut polysilicon wafers, so as to improve photoelectric conversion efficiency and reduce surface reflectance Effect

Active Publication Date: 2020-09-15
SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when polysilicon wafers are cut by diamond wire, after polishing, the surface reflectivity is higher and there are obvious appearance defects such as line marks, which seriously reduces the efficiency of cells and hinders the large-scale promotion of diamond wire cut polysilicon wafers.
[0003] Conventional silicon wafer surface polishing or texturing mainly adopts NaOH / isopropanol (IPA) system. Although it has a certain effect, isopropanol is harmful to the human body and will cause environmental pollution, and the polishing effect is not ideal ( For example, the polishing speed is fast, and the reflectivity of the polysilicon after polishing is still high), therefore, those skilled in the art need to seek a kind of polishing liquid that can be environmentally friendly and can achieve a better polishing effect.

Method used

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  • A kind of polishing liquid and its preparation method and application
  • A kind of polishing liquid and its preparation method and application
  • A kind of polishing liquid and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The raw materials of each component in the additive are prepared by the following mass percentages:

[0031] Isooctyl alcohol polyoxyethylene ether phosphate 0.067%

[0032] Alkyl polyglucoside 0.67%

[0033] Deionized water balance;

[0034] Accurately weigh the above-mentioned raw materials and put them into a reaction kettle. After stirring and mixing for 1 hour at room temperature, a light yellow transparent liquid is obtained, which is the additive provided by the present invention. The measured pH value is 3.06.

[0035] Then, additive, Potassium Hydroxide, deionized water are formulated into polishing liquid by following mass percentage:

[0036] Potassium Hydroxide 8%

[0037] Additive 0.11%

[0038] Deionized water balance;

[0039] Potassium hydroxide is dropped into deionized water earlier, then is dropped in the polishing tank together with additive, circulates and mixes evenly, promptly obtains the polishing liquid of the present invention, then is hea...

Embodiment 2

[0041] The raw materials of each component in the additive are prepared by the following mass percentages:

[0042] Isooctyl alcohol polyoxyethylene ether phosphate 0.02%

[0043] Alkyl Polyglucoside 1%

[0044] Deionized water balance;

[0045] Accurately weigh the above-mentioned raw materials and put them into a reaction kettle. After stirring and mixing for 1 hour at room temperature, a light yellow transparent liquid is obtained, which is the additive provided by the present invention. The measured pH value is 3.96.

[0046] Then, additive, Potassium Hydroxide, deionized water are formulated into polishing liquid by following mass percentage:

[0047] Potassium Hydroxide 10%

[0048] Additive 0.22%

[0049] Deionized water balance;

[0050] Potassium hydroxide is dropped into deionized water earlier, then is dropped in the polishing groove together with additive, circulates and mixes evenly, obtains the polishing liquid of the present invention, then is heated up to ...

Embodiment 3

[0052] The raw materials of each component in the additive are prepared by the following mass percentages:

[0053] Isooctanyl Polyoxyethylene Ether Phosphate 0.1%

[0054] Alkyl Polyglucoside 3%

[0055] Deionized water balance;

[0056] Accurately weigh the above-mentioned raw materials and put them into a reaction kettle. After stirring and mixing for 1 hour at room temperature, a light yellow transparent liquid is obtained, which is the additive provided by the present invention. The measured pH value is 2.92.

[0057] Then, the additive, sodium hydroxide, and deionized water are formulated into a polishing liquid in the following mass percentages:

[0058] Sodium Hydroxide 15%

[0059] Additive 0.5%

[0060] Deionized water balance;

[0061] Sodium hydroxide is dropped into deionized water earlier, then drops into the polishing tank together with the additive, and the circulation is mixed evenly to obtain the polishing liquid of the present invention, and then the temp...

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Abstract

The invention discloses a polishing solution, a preparation method and application thereof. The polishing solution comprises the following components by mass percentage: 1-20% of an inorganic alkalinecompound, 0.1-1% of an additive, and the balance deionized water. The additive is composed of the following components: 0.01-0.5% of isooctanol polyoxyethylene ether phosphate, 0.5-5% of alkyl polyglucoside, and the balance deionized water. The preparation method includes: 1) weighing the components according to the mass ratio in the additive, and then mixing the components to obtain the additive; and 2) weighing the raw materials according to the mass ratio in the polishing solution, firstly adding the inorganic alkaline compound into the deionized water, then performing mixing the additiveprepared by step (1), thus obtaining the polishing solution. The polishing solution can be applied in a post-polishing process of a diamond wire sawn polycrystalline silicon wafer. The polishing solution provided by the invention can achieve little thickness reduction of polycrystalline silicon after treatment, and also can indirectly enhance the photoelectric conversion rate.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to polishing treatment after diamond wire cutting polysilicon wafers, in particular to a polishing liquid and its preparation method and application. Background technique [0002] Reducing costs and improving efficiency is the tireless pursuit of photovoltaic practitioners. On the silicon wafer side, diamond wire slicing technology has shown great advantages. With the large-scale application of diamond wire slicing technology, the manufacturing cost of monocrystalline silicon wafers has been greatly reduced, and the multi-crystalline market has been squeezed, which has reduced the cost of multi-crystalline silicon wafers. The pressure increased further. However, when polysilicon wafers are cut by diamond wire, after polishing, the surface reflectivity is higher and there are obvious appearance defects such as line marks, which seriously reduces cell efficiency and hinders the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/04
CPCC09G1/04
Inventor 金炳生高小云刘兵
Owner SUZHOU CRYSTAL CLEAR CHEMICAL CO LTD
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