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Chemical impurity-removing method and equipment for graphene thin film during transfer

A graphene film and graphene technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve problems such as difficult cleaning, limited output, increased time cost, etc., to improve cleaning effect and improve corrosion Speed, achieve the effect of recycling

Active Publication Date: 2018-05-15
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this method are as follows: 1. Due to the foaming agent in production, a large amount of foam will be generated, and some residual charcoal will float on the foam. When the product comes out of the tank, the residual charcoal will adhere to the surface of the product, resulting in poor appearance or poor function of impurities. ; 2. Insufficient circulation of liquid medicine in the tank will cause uneven distribution of liquid medicine concentration in the tank during mass production, poor removal effect, and long reaction time, limiting output; 3. Extensive use of foaming agent, waste Cost, cleaning difficulties and impact on post-process product assembly
Due to the large amount of impurities in the potion that has completed the etching operation, it cannot be reused directly
Some of the liquid medicines that have completed the etching work are used in other fields; Liquid recovery rate is low

Method used

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  • Chemical impurity-removing method and equipment for graphene thin film during transfer
  • Chemical impurity-removing method and equipment for graphene thin film during transfer
  • Chemical impurity-removing method and equipment for graphene thin film during transfer

Examples

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Embodiment 1

[0064] Such as figure 1 As shown, the present embodiment provides a continuous impurity removal device for graphene film transfer, including: transmission device 100, two continuous chemical corrosion sections 200, four continuous water washing sections 300, a water reducing section 400, and the drying section 500, the transmission device 100 runs through the chemical corrosion section 200, the water washing section 300, the water reduction section 400, and the drying section 500, and the chemical corrosion from the upstream to the downstream of the driving direction of the transmission device 100 is sequentially Section 200, washing section 300, water reducing section 400, and drying section 500.

[0065] The base of this embodiment takes copper foil as an example. After graphene is prepared by CVD, a layer of dense graphene with regular arrangement of C atoms will be deposited on one surface of the copper foil, and graphene will be deposited or adsorbed on the other surface....

Embodiment 2

[0086] Embodiment 2 is a further improvement to Embodiment 1. The main improvement is that a temperature control system is also provided in the chemical corrosion section 200, and the temperature control system includes a heating rod and a heat dissipation pipe. The heating rod and the heat dissipation pipe are arranged on In the medicine tank, it is used to control the temperature of the medicine in the medicine tank.

Embodiment 3

[0088] A chemical impurity removal method for a graphene film in transfer, comprising:

[0089] First cover the side of the graphene-grown substrate with the graphene film that needs to be retained with a protective film;

[0090] Then add the impurity-removing potion for chemical corrosion;

[0091] After the chemical corrosion is completed, the liquid medicine is filtered and recycled;

[0092] The substrate after impurity removal is washed with water and dried.

[0093] The chemical etching is carried out by spraying impurity-removing potion on the surface of the substrate on which the graphene grows.

[0094] The substrate is a metal substrate, preferably a copper substrate or a nickel substrate.

[0095] The impurities-removing potion is a mixed system of hydrochloric acid plus hydrogen peroxide, a mixed system of sulfuric acid plus hydrogen peroxide, a mixed system of sulfuric acid plus sodium persulfate or a nitric acid system. The HCL content in the mixed system of...

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Abstract

The invention relates to a continuous impurity-removing method and equipment for a graphene thin film during transfer and a graphene transfer method. The equipment comprises a transmission device, a chemical corrosion section, a washing section, a water reducing section and a drying section, wherein the transmission device penetrates the chemical corrosion section, the washing section, the water reducing section and the drying section which are sequentially arranged from upstream to downstream along the traveling direction of the transmission device.

Description

technical field [0001] The invention relates to a graphene transfer and a method for removing a graphene growth substrate by a chemical corrosion method, as well as equipment for etching the substrate by a chemical corrosion method and cleaning equipment, and belongs to the field of graphene transfer after graphene is prepared by a CVD method. Background technique [0002] The CVD method is considered to be the most promising method for preparing high-quality, large-area graphene, and is the most promising method for industrial production of graphene films. The specific process of the chemical vapor deposition CVD method is: the hydrocarbon methane, ethanol, etc. are introduced into the surface of the metal substrate Cu and Ni which are heated at high temperature, and the reaction is continued for a certain period of time before cooling. During the cooling process, several layers will be formed on the surface of the substrate. Or single-layer graphene, this process includes ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/196C01B32/194
Inventor 李涛张洪涛
Owner WUXI GRAPHENE FILM
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