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Preparation method of high-purity gallium oxide

A gallium oxide, high-purity technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problems of low purity of gallium oxide, unsatisfactory use, high equipment investment, etc., to achieve high purity and production The effect of high efficiency and less production equipment

Inactive Publication Date: 2018-05-18
清远先导材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is simple in process, relatively high in production efficiency, and can realize continuous production, but unreacted gallium is likely to remain in the product, and the purity of gallium oxide is relatively low, with a purity of 99% to 99.9%, which cannot meet the requirements in the semiconductor field and scintillation. The use of the crystal field, but there are also problems such as high equipment investment

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  • Preparation method of high-purity gallium oxide
  • Preparation method of high-purity gallium oxide
  • Preparation method of high-purity gallium oxide

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preparation example Construction

[0015] The preparation method of high-purity gallium oxide according to the present application includes steps: S1, adding solvent water into the reaction kettle, raising the temperature to above 30°C, then adding metal gallium, turning on the stirring device to disperse the metal gallium evenly, and then adding React with nitric acid, filter to remove unreacted solid impurities after the reaction, and obtain gallium nitrate solution; S2, place the filtered gallium nitrate solution in the reaction kettle, start the stirring device, and then add ammonia water to react until the pH value of the reaction system Stable and unchanged, end the reaction, stop stirring or start periodic stirring to age the reacted material at 40°C to 110°C; S3, restart the stirring device after aging to continue stirring to make the material disperse evenly, and then use a centrifuge Centrifuge, wash, dry, discharge, and then calcined under non-reducing gas atmosphere to obtain high-purity gallium oxid...

Embodiment 1

[0038] Add 400L of purified water into the nitric acid corrosion-resistant Ti reaction kettle, raise the temperature to 40°C, then add 69.72kg (1000mol) of liquid metal gallium with a purity of 4N, then start stirring to make the metal gallium evenly distributed in the water, and then use a more uniform The speed of the reaction is to add an aqueous solution of nitric acid with a purity of chemical purity, wherein the molar ratio of metal gallium to nitric acid is 1:4, and the reaction is continued for 24 hours until the solution is clear and transparent. At this time, the pH of the solution is about 2.0, and then filtered through a precision filter. A solution of gallium nitrate was obtained.

[0039] Place the gallium nitrate solution in an interlayered Ti reaction kettle resistant to nitric acid corrosion, dilute it with purified water until the content of gallium in the solution is 20g / L, then add chemically pure ammonia water for reaction, when the pH of the solution is st...

Embodiment 2

[0044] Add 400L of purified water into the nitric acid corrosion-resistant Ti reaction kettle, raise the temperature to 40°C, then add 69.72kg (1000mol) of liquid metal gallium with a purity of 5N, then start stirring to make the metal gallium evenly distributed in the water, and then use a more uniform The rate of adding purity is chemically pure nitric acid aqueous solution to react, wherein the molar ratio of metal gallium and nitric acid is 1:4.5, continue to react for 16h until the solution is clear and transparent, the pH of the solution at this time is about 1.0, and then filtered through a precision filter, A solution of gallium nitrate was obtained.

[0045] Place the gallium nitrate solution in an interlayered Ti reaction kettle resistant to nitric acid corrosion, add purified water to dilute it until the content of gallium in the solution is 150g / L, then add chemically pure ammonia water for reaction, when the pH of the solution is stable End the reaction after 9.0,...

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Abstract

The application provides a preparation method of high-purity gallium oxide, comprising the steps of adding solvent water into a reactor, heating to 30 DEG C and above, adding metallic gallium, starting a stirring device to evenly disperse the metallic gallium, adding nitric acid into the reactor to allow reaction, and filtering after reaction to remove non-reacted solid impurities to obtain gallium nitrate solution; adding the filtered gallium nitrate solution into the reactor, starting the stirring device, adding ammonia water to allow reaction until pH of the reaction system remains stable and unchanged, stopping stirring or starting phased stirring so that the reacted material ages at 40-110 DEG C, restarting the stirring device after ageing to continuously stir the material until evendispersion, centrifuging with a centrifuge, washing, spin-drying, discharging, and calcining in a non-reducing gas atmosphere to obtain high-purity gallium oxide. The preparation method herein uses few production equipment and has low production cost and high production efficiency, and the produced gallium oxide has high purity.

Description

technical field [0001] The present application relates to the field of semiconductor materials, in particular to a method for preparing high-purity gallium oxide. Background technique [0002] Gallium oxide (Ga 2 o 3 ) is a broadband N-type semiconductor oxide with a forbidden band width of about 4.2eV-4.9eV. Gallium trioxide is the most stable among gallium oxides, and it has five isomer structures, namely α-Ga 2 o 3 , β-Ga 2 o 3 , γ-Ga 2 o 3 , ε-Ga 2 o 3 and δ-Ga 2 o 3 , where β-Ga with a monoclinic structure 2 o 3 The most stable performance. β-Ga 2 o 3 The unit cell consists of two edge-sharing GaO 6 octahedron and two GaO 4 Composed of tetrahedrons, there are oxygen ion vacancies on the surface, showing N-type semiconductor behavior, and can interconvert with several other isomers. The basic properties of β-gallium oxide crystals are: the lattice constants are The reflection coefficient is 1.8; the dielectric constant is 9.9~10.2. These excellent p...

Claims

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Application Information

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IPC IPC(8): C01G15/00
CPCC01G15/00C01P2002/72C01P2006/80
Inventor 王波陈应红张佳朱刘
Owner 清远先导材料有限公司
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