The invention provides
silicon dioxide-based CMP (Chemical Mechanical
Polishing) solution which is applied to global planarization of a
very large scale integrated circuit
silicon substrate and an interlayer medium and a preparation method of the
silicon dioxide-based CMP solution. The
polishing solution contains the following components in percentage by weight: 10-50 percent of
nano silicon dioxide
grinding material, 0.1-10 percent of dispersant, 0.1-10 percent of
wetting agent, 0.1-10 percent of chelating agent, 0.01-1 percent of pH (Potential of
Hydrogen)
regulator and the balance of de-ionized water. The
polishing solution is prepared through the means of: modifying with a surfactant, strongly and mechanically stirring, performing high-shear
grinding, performing
ultrasonic dispersion and the like, and the problem of extreme easiness in
flocculation and agglomeration of nano-scale
grinding material particles is solved. Since the
particle size distribution of the grinding material is narrow, the range is selectable, the
polishing rate is easy to adjust and control and the polishing solution is alkaline, equipment is not corroded, less damage is caused, cleaning is easy and the environment is not polluted. The
silicon dioxide-based CMP solution can be used for chemical mechanical polishing of the
very large scale integrated circuit silicon substrate, the interlayer medium, a
shallow trench isolation isolator, conductor and damascene
metal.