Method for preparing thin film solar cell from multi-element alloy single target material

A solar cell and multi-element technology, applied in metal material coating technology, circuits, electrical components, etc., can solve problems such as increased risk factors, high energy consumption, and highly toxic steam, so as to avoid environmental pollution and simplify process steps , the effect of shortening the production cycle

Active Publication Date: 2011-05-11
PIONEER MATERIALS INC CHENGDU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] 1. Long production cycle and low production efficiency;
[0010] 2. High energy consumption: the boiling point of Se is 685°C, and the temperature of selenization is higher than 685°C;
[0011] 3. High consumption of Se: only part of Se vapor can contact with Cu-In-Ga layer;
[0012] 4. The vapor of Se is highly toxic, which is likely to cause safety accidents: when gaseous Se meets water (including water in the air), it will form gaseous H 2 Se (is a poisonous gas); in addition, gaseous Se is highly corrosive to other metals and easily leaks Se vapor, even with the best selenium source H 2 Se is also because it is toxic and volatile, and it needs to be stored in a high-pressure container, which increases the risk factor;
In addition, cadmium-contaminated water sources can also cause poisoning

Method used

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  • Method for preparing thin film solar cell from multi-element alloy single target material
  • Method for preparing thin film solar cell from multi-element alloy single target material
  • Method for preparing thin film solar cell from multi-element alloy single target material

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Experimental program
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Effect test

Embodiment 1

[0038] On the 0.3mm thick 304 stainless steel sheet, use magnetron sputtering to deposit 0.8 micron thick molybdenum Mo metal, and then use the vacuum magnetron sputtering method to sputter the CIGS alloy single target prepared by the vacuum melting method described in patent 200810044210.5 on the molybdenum film material to form the solar cell absorber layer. Sputter the first time with a copper-rich CIGS alloy single target, and then sputter with a copper-poor CIGS alloy single target for the second time. The copper-rich CIGS alloy single target material has a mass ratio of copper atoms of 28%, and the mass ratio of selenium atoms is 45%; the copper-poor CIGS single target material has a mass ratio of copper atoms of 20%, and the mass ratio of selenium atoms The mass ratio of atoms is 53%. The parameter of magnetron sputtering is 3x10 -3 Torr, and doped with 5% O 2 The Ar gas is used, and the temperature of the molybdenum substrate is kept at 350°C to 450°C during the spu...

Embodiment 2

[0046] Magnetron sputtering is used to deposit 0.8 micron thick molybdenum Mo metal on a 3mm thick soda lime glass sheet, and then vacuum magnetron sputtering is used to sputter CIS (CuInS) prepared by the vacuum melting method described in patent 200810044210. 2 ) alloy single target to form the solar cell absorber layer. Sputter the first time with a copper-rich CIS alloy single target, and then sputter with a copper-poor CIS alloy single target for the second time. The copper-rich CIS alloy single target material has a mass ratio of copper atoms of 28%, and the mass ratio of selenium atoms is 45%; the copper-poor CIS single target material has a mass ratio of copper atoms of 20%, and the mass ratio of selenium atoms The mass ratio of atoms is 53%. The parameter of magnetron sputtering is 3x10 -3 Torr, and doped with 5% O 2 Ar gas was used, and the temperature of the molybdenum substrate was kept at 350 °C during the sputtering process. The deposition thickness of the co...

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Abstract

The invention discloses a method capable of preparing a I-III-VI2 multi-element thin film solar cell with a chalcopyrite structure. The method comprises the following steps of: preparing a solar cell absorption layer from the single target material of a multi-element alloy by a vacuum magnetron sputtering method on a soda glass Mo substrate or a stainless steel plate Mo substrate; annealing the solar cell absorption layer to grow grains of an alloy metal prefabricated layer; and preparing a buffer layer, an i-ZnO high-impedance layer and a ZnO low-impedance layer. Each layer of thin film is prepared by a dry technique completely, and the thin film solar cell with the chalcopyrite structure is obtained finally without selenizing the main absorption layer of the chalcopyrite structure, so the manufacturing cost is saved, the time is shortened, and the hazard of the hypertoxicity of H2Se or Se in a selenizing process is avoided. The buffer layer does not contain cadmium, so the thin film solar cell is environmentally-friendly. The preparation technical equipment is simple and the energy consumption is low, so the method is suitable for industrial production and has economic benefit.

Description

technical field [0001] The present invention relates to a kind of preparation I-III-VI 2 The invention relates to a thin-film solar battery method with a chalcopyrite structure, which belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] The available energy on the earth is becoming increasingly scarce, and it is an indisputable fact that the use of petrochemical energy will emit carbon and sulfur oxides, cause air pollution and aggravate the earth's greenhouse effect, deteriorating the earth's environment and abnormal climate. Therefore, the development of pollution-free renewable energy is one of the most important scientific research projects in the world. The utilization of solar energy is the best choice for non-polluting and renewable energy. renewable energy. The most important thing in the development and utilization of solar energy is to develop materials that can generate and convert solar energy with hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C14/06C23C14/35
CPCY02P70/50
Inventor 林刘毓丘立安
Owner PIONEER MATERIALS INC CHENGDU
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