Field effect transistor based on vertical tunneling, biosensor and preparation methods thereof

Abstract

The invention provides a field effect transistor based on vertical tunneling, a biosensor and preparation methods thereof. The preparation method of the field effect transistor comprises the followingsteps: providing an SOI substrate; thinning top silicon, and defining a silicon nanowire channel pattern and a source region pattern and a drain region pattern connected at the two ends; transferringthe patterns above to the top silicon, and carrying out ion implantation to form a silicon nanowire channel, a source region and a drain region; thinning the source region, and forming a dielectric layer on a part of source region surface and nanowire channel surface; and preparing a source electrode on the surface of the source region, preparing a drain electrode on the surface of the drain region, and preparing a gate electrode on bottom silicon or a buried oxide layer. Through the scheme above, the transistor based on vertical tunneling comprises point tunneling and line tunneling, has lower sub-threshold slope, can be used for high-sensitivity biochemical molecular detection, has bipolar characteristics, can carry out comparison on bidirectional detection results and ensures detectionaccuracy; and through the high-K dielectric layer material, detection stability is enhanced and response capability for biomolecule is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a field effect transistor, a biosensor and their respective preparation methods. Background technique [0002] Semiconductor biosensors are sensors composed of biomolecular recognition devices (biosensitive films) and semiconductor devices. Biosensors based on semiconductor field effect transistors (FET) are simple in structure, low in cost, and convenient for mass production; good mechanical properties , good seismic performance, long life; low output impedance, easy to match with subsequent circuits; multiple sensors can be integrated on the same chip, which can achieve multi-function, multi-parameter detection and other advantages, semiconductor field effect transistor biosensors are considered to be the most One of the devices with application potential. [0003] Among them, the semiconductor field effect transistor sensor based on sili...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a field effect transistor, a biosensor and their respective preparation methods, which are used to solve the problems of low device structure sensitivity, high power consumption, poor reliability and detection problems in the prior art. poor accuracy

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