Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A light-emitting diode based on cesium lead halide perovskite thin film material and its preparation method

A light-emitting diode, cesium-lead-halide technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of quantum dot life, carrier injection, performance and life of light-emitting diodes, etc., to achieve good crystal quality and Effects of optical quality, high injection current and brightness

Active Publication Date: 2020-10-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in light-emitting diodes, quantum dots need to be spin-coated into a thin film structure. Due to the existence of ligands on the surface of quantum dots, even after repeated cleaning, the organic ligands on the surface will still affect the injection of carriers.
In addition, due to the cleaning of surface ligands, the lifespan of quantum dots will be affected, and they can easily transform into non-perovskite phases that do not emit light, which seriously affects the performance and lifespan of light-emitting diodes.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode based on cesium lead halide perovskite thin film material and its preparation method
  • A light-emitting diode based on cesium lead halide perovskite thin film material and its preparation method
  • A light-emitting diode based on cesium lead halide perovskite thin film material and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] The invention provides a method for preparing a cesium lead halide perovskite thin film material, comprising the following steps:

[0036] A) Mix cesium halide and lead halide containing the same halogen elements and grind to obtain mixed powder;

[0037] B) Put the mixed powder in a CVD tube furnace, feed the carrier gas, place the substrate in the downstream direction of the carrier gas, under the condition of 100~200Pa, at a speed of 10~30°C / min The temperature in the furnace cavity of the tube furnace is raised to 500-700° C., kept for 5-30 minutes, and then lowered, and a cesium lead halide perovskite thin film material grows on the surface of the substrate.

[0038] In the invention, cesium halide and lead halide containing the same halogen element are firstly mixed and then ground to obtain mixed powder.

[0039] Wherein, the cesium halide (CsX) is selected from cesium chloride, cesium bromide or cesium iodide; the lead halide (PbX 2 ) is selected from lead chl...

Embodiment 1

[0079] cesium bromide and lead bromide (CsBr and PbBr 2 ) were mixed together in a molar ratio of 2:1 and ground to a homogeneous powder. The mixed powder was loaded into a ceramic boat and placed in a CVD tube furnace. Place the glass substrate in the downstream direction of the gas flow of the ceramic boat carrying the raw powder in the tube furnace. First, the air pressure in the tube furnace was pumped to 30 Pa with a mechanical pump, and then 250 sccm of high-purity argon (99.99%) was introduced into the furnace cavity as the protective gas and carrier gas. After feeding argon, the air pressure in the furnace chamber was maintained at 140 Pa. The temperature in the tube furnace chamber was raised to 600° C. at a speed of 20° C. / min and kept for 15 minutes. After the growth is completed, stop the heating, let the furnace chamber cool down naturally, and maintain the growth airflow and air pressure until the temperature in the furnace chamber drops below 150°C. The thic...

Embodiment 2

[0082] cesium chloride and lead chloride (CsCl and PbCl 2 ) were mixed together in a molar ratio of 2:1 and ground to a homogeneous powder. The mixed powder was loaded into a ceramic boat and placed in a CVD tube furnace. Place the glass substrate in the downstream direction of the gas flow of the ceramic boat carrying the raw powder in the tube furnace. First, the air pressure in the tube furnace was pumped to 40 Pa with a mechanical pump, and then 300 sccm of high-purity argon (99.99%) was introduced into the furnace cavity as a protective gas and carrier gas. After feeding argon, the air pressure in the furnace chamber was maintained at 150 Pa. The temperature in the tube furnace chamber was raised to 600° C. at a speed of 20° C. / min and kept for 15 minutes. After the growth is completed, stop the heating, let the furnace chamber cool down naturally, and maintain the growth airflow and air pressure until the temperature in the furnace chamber drops below 150°C. The thic...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
emission peakaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a cesium lead halide perovskite thin film material, comprising the following steps: A) mixing cesium halide containing the same halogen element with lead halide and then grinding to obtain a mixed powder; B) mixing the mixed The powder is placed in a CVD tube furnace, the carrier gas is passed through, and the substrate is placed in the downstream direction of the carrier gas. Under the condition of 100-200Pa, the tube furnace The temperature in the furnace cavity is raised to 500-700° C., maintained for 5-30 minutes, and then lowered, and cesium lead halide perovskite film material grows on the surface of the substrate. The cesium lead halide perovskite thin film material prepared by the chemical vapor deposition method provided by the invention has better crystal quality and optical quality, and the prepared light-emitting diode has higher injection current and brightness.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to a cesium lead halide perovskite film material, a light emitting diode and a preparation method thereof. Background technique [0002] Light-emitting diodes can be used in personal or commercial equipment such as display, lighting, stage and advertisement, and have extremely wide application prospects and demands. However, in order to achieve different emission wavelengths at this stage, it is necessary to use complex synthesis or growth processes to prepare different systems or types of light-emitting layer materials, which increases the difficulty and cost. Therefore, it is necessary to develop the same system of light-emitting layer materials with adjustable wavelength to realize light-emitting diodes of different colors. [0003] Perovskite materials have ultra-fast charge generation speed, high mobility and long carrier lifetime, and have high excit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/26H01L33/48H01L33/00
CPCH01L33/005H01L33/26H01L33/48
Inventor 王飞田灿灿梅晶晶刘洪珍王云鹏赵东旭
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com