Snapshot imaging spectrometer based on stepped phase reflector, and manufacturing method
An imaging spectrometer and mirror technology, applied in the field of multi-channel micro-snapshot infrared interference imaging spectrometer, to achieve high real-time performance, fast detection speed, and strong stability
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Embodiment 1
[0090] Example 1: for Figure 8 The grid beam splitter shown in s is manufactured, and the material is a double-sided polished (100) single crystal silicon wafer with high flatness and high parallelism. Its preparation method is:
[0091] 1. Growth or evaporation of silicon dioxide and silicon nitride and other dielectric films or composite films on the cleaned double-sided polished single crystal silicon surface as a masking film;
[0092] 2. Directional photolithography to expose the side groove pattern, and remove the masking film in the side groove pattern by etching to expose the surface of the single crystal silicon. Use monocrystalline silicon anisotropic etching solution to etch the side groove, and the etching depth is equal to the final thickness of the beam splitter window; the shape of the side groove can also be formed by arranging multiple rectangles or squares at a certain distance apart from the figure shown in the figure.
[0093] 3. Carry out the second pho...
Embodiment 2
[0095] Embodiment 2: For both horizontal and vertical grid rib structures Figure 9 The double-sided grating beam splitter of f can be made by the above method, the difference is that a double-sided masking film needs to be prepared, which is realized by double-sided photolithography and double-sided etching, and the upper and lower surface patterns are the same. In the first photolithographic etching, the sum of the etching depths of the upper and lower surface side grooves is the final thickness value of the beam splitter window.
Embodiment 3
[0096] Example 3: For a grid beam splitter with a structure such as Figure 8 The shape of k is made, and the material is a double-sided polished silicon wafer with high flatness and high parallelism. Its production process is as follows:
[0097] 1. Evaporate aluminum film or heat-grown silicon dioxide or evaporate silicon nitride and other metal films or dielectric films or composite films on the cleaned double-sided polished single crystal silicon surface as a masking film;
[0098] 2. Photolithography to expose the side groove pattern, and remove the masking film in the side groove pattern by etching to expose the surface of the single crystal silicon. Using ICP or RIE technology for side grooves, the corrosion depth is equal to the final thickness of the beam splitter window; besides the figure shown, the shape of the side grooves can also be formed by multiple rectangles, squares, circles, ellipses or other polygonal shapes arranged at a certain distance. become.
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