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Multi-wavelength silicon-based microcavity laser array and preparation method thereof

A laser array and multi-wavelength technology, applied in the direction of lasers, laser devices, laser components, etc., can solve problems affecting the quality of epitaxial layers, etc., to solve lattice mismatch and thermal mismatch, reduce absorption loss, and reduce loss Effect

Inactive Publication Date: 2018-06-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These dislocations and antiphase domain boundaries will extend to the surface of the epitaxial layer, seriously affecting the quality of the epitaxial layer, so the growth of Si-based III-V materials must solve these problems

Method used

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  • Multi-wavelength silicon-based microcavity laser array and preparation method thereof
  • Multi-wavelength silicon-based microcavity laser array and preparation method thereof
  • Multi-wavelength silicon-based microcavity laser array and preparation method thereof

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preparation example Construction

[0036] As a preferred embodiment, the present invention discloses a method for preparing a multi-wavelength silicon-based microcavity laser array, comprising the following steps:

[0037] Step 1, sequentially epitaxially growing a germanium layer, a nucleation layer, a buffer layer and a laser epitaxial layer on a silicon substrate;

[0038] Step 2, performing a well layer hybrid process on the waveguide area outside the light-emitting area in the epitaxial layer of the laser;

[0039] Step 3, etching on the epitaxial layer of the laser to form a coupling waveguide and microcavities of at least two sizes, corresponding to at least two emission wavelengths of the laser array;

[0040] Step 4, depositing a silicon dioxide layer, opening a window, making electrodes, and completing the preparation of a multi-wavelength silicon-based microcavity laser array.

[0041] Wherein, the silicon substrate is an off-cut n-type (100) substrate, which is put into an epitaxial growth reaction...

Embodiment 1

[0053] Such as Figure 1-8 As described, this embodiment provides a method for preparing a multi-wavelength silicon-based microcavity laser array, such as figure 1 As shown, this method includes the following steps:

[0054] Step 1, sequentially epitaxially growing a germanium layer, a nucleation layer, a buffer layer and a laser epitaxial layer on a silicon substrate; this step specifically includes the following sub-steps:

[0055] Step 1-1. Select an N-type low-resistance silicon substrate 1 with an off-cut angle, and put it into an ultra-high vacuum chemical vapor deposition reaction chamber after cleaning a standard silicon wafer;

[0056] Step 1-2, such as figure 2 As shown, the germanium layer 2 is epitaxially grown on the upper surface of the silicon substrate 1 by using the UHVCVD method, which needs to be less than 1×10 6 cm -2 High defect density and surface roughness less than 1nm, and N-type low resistance.

[0057] Step 1-3, such as figure 2 As shown, a g...

Embodiment 2

[0068] This embodiment provides a multi-wavelength silicon-based microcavity laser array, such as the cross-sectional view at A-A' Figure 7 As shown, the laser array is described.

[0069] The laser array includes N-type low-resistance silicon-based substrate 1, N-type low-resistance germanium layer 2, gallium arsenide nucleation layer 3, gallium arsenide buffer layer 4, laser epitaxial layer 5 with ridge-table structure, and two layers from bottom to top. The silicon oxide layer 6, the positive electrode 7, and the negative electrode 8 located under the silicon-based substrate 1 are also included.

[0070] Wherein, the upper surface of the laser epitaxial layer 5 has a microcavity with a ring structure etched to the upper surface of the buffer layer and a coupling waveguide with a rectangular parallelepiped structure, and the positive electrode 7 corresponds to the microcavity through an electrode isolation pattern.

[0071] Wherein the silicon dioxide layer 6 has an electr...

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Abstract

The invention relates to a multi-wavelength silicon-based microcavity laser array and a preparation method thereof. The preparation method includes the following steps that: a germanium layer, a nucleation layer, a buffer layer and a laser epitaxial layer are sequentially epitaxially grown on a silicon substrate; well layer mixing process is performed on the waveguide region of the laser epitaxiallayer; a coupling waveguide and microcavities having at least two kinds of sizes are formed on the laser epitaxial layer through etching, so that the microcavities having at least two kinds of sizescan respectively correspond to at least two kinds of emission wavelengths of the laser array; and the preparation of the multi-wavelength silicon-based microcavity laser array is completed. The invention belongs to the optical communication device field. According to the multi-wavelength silicon-based microcavity laser array and the preparation method thereof of the invention, ultra-high vacuum chemical vapor deposition and MOCVD are combined so as to fabricate the silicon-based microcavity laser array; and different wavelength outputs are realized by controlling the sizes of the microcavities. The multi-wavelength silicon-based microcavity laser array and the preparation method thereof are applied to silicon-based photoelectric integration and silicon-based photonics.

Description

technical field [0001] The invention relates to the field of optical communication devices, in particular to a multi-wavelength silicon-based microcavity laser array and a preparation method thereof. Background technique [0002] Microelectronics technology is developing rapidly, but it is about to encounter double bottlenecks in physics and technology. For this reason, people turn their attention to photonics and hope to realize the next information industry revolution with the help of silicon-based photonic integration technology. However, the most important light source in this technology has not been integrated on silicon. Although people have been exploring for many years on silicon-based light sources with group IV materials as the active region and silicon-based III-V mixed light sources, these achievements are far from being practical. [0003] At present, silicon / germanium lasers with continuous lasing at room temperature can be produced by using special methods (...

Claims

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Application Information

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IPC IPC(8): H01S5/40H01S5/343H01S5/10
CPCH01S5/40H01S5/1042H01S5/34326
Inventor 周旭亮李召松王梦琦王嘉琪于红艳潘教青王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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