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A low-profile power module for high-frequency applications

A power module, a thin technology, applied in the direction of output power conversion device, AC power input conversion to DC power output, high-efficiency power electronic conversion, etc., can solve problems such as chip breakdown, burning modules, etc.

Active Publication Date: 2020-04-17
南京银茂微电子制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the distributed inductance is too high, the total voltage superimposed on the bus voltage, if it exceeds the withstand voltage value of the silicon carbide MOSFET chip, will cause the breakdown of the chip and burn the module

Method used

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  • A low-profile power module for high-frequency applications
  • A low-profile power module for high-frequency applications
  • A low-profile power module for high-frequency applications

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Embodiment Construction

[0020] The present invention is a power module suitable for high-frequency applications. It balances the distributed inductance of the gate control loop and power loop of each chip for wide-bandgap semiconductor chips, such as silicon carbide MOSFETs, so that when the module is turned on, The current borne by each chip is basically balanced, and when the module is turned off, the voltage borne by each chip is also basically balanced. The invention is illustrated with the most common half-bridge power module. Such as figure 1 As shown, the half-bridge power module includes two silicon carbide MOSFET power units, the upper-bridge MOSFET1 and the lower-bridge MOSFET2. In actual operation, the silicon carbide MOSFETs in the upper and lower bridge arms are turned on and off alternately to control the output current. The gate loop of the upper bridge arm is G1-S1, and the gate loop of the lower bridge arm is G2-S2. The corresponding power loop of the upper bridge arm is the posit...

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PUM

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Abstract

The invention discloses a thin power module suitable for high-frequency applications, which sequentially includes a heat-conducting bottom plate, a copper-clad substrate, and a chip, and the connection between the chip and the chip and the copper sheet is realized by bonding wires, and the front of the module is provided with an output terminal, a positive electrode and a chip. The negative power terminal and the signal terminal are set on the back of the module. The chip is divided into an upper bridge arm group and a lower bridge arm group. The upper bridge arm and the lower bridge arm are symmetrically distributed. The even-numbered power units in the arm are distributed symmetrically up and down, the positive and negative power terminals respectively adopt double pins, the pins are symmetrically arranged left and right and the two pins of each power terminal are welded symmetrically up and down on the copper sheet of the copper-clad substrate, At the same time, inside the module, the power terminals adopt a bent vertical stacked structure. The structure of the invention can reduce and equalize the distributed inductance while realizing the thinning of the power module.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a design and realization method of a thin silicon carbide (SiC) or other type MOSFET module suitable for high-frequency applications. Background technique [0002] Silicon carbide MOSFET is a wide bandgap semiconductor, which not only can withstand high voltage and provide high current, but also is easy to control, and has the characteristics of higher allowable operating temperature. It is an important power device for a new generation of motor control and power inverter. Moreover, compared with silicon-based power devices, silicon carbide MOSFETs can meet higher switching frequency (>50kHz) requirements, which provides the possibility for power systems to further increase power density and reduce volume. Silicon carbide MOSFET single chip, due to the limitation of the performance of silicon carbide material, the output current of a single chip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H02M7/00
CPCH01L25/072H02M7/003H01L2224/49111Y02B70/10
Inventor 庄伟东姚二现
Owner 南京银茂微电子制造有限公司
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