Resistive random access memory cell and manufacturing method thereof, electronic device

Abstract

The invention provides a resistive random access memory cell, a manufacturing method thereof, and an electronic device. The manufacturing method of the resistive random access memory cell comprises the steps of: providing a semiconductor substrate, and forming patterned first electrode material layers on the semiconductor substrate; forming variable resistance material layers and second left electrode material layers on sidewalls of the first electrode material layers sequentially; forming a first interlayer dielectric layer on the semiconductor substrate, wherein the first interlayer dielectric layer covers the sidewalls of the second left electrode material layers; and cutting the first electrode material layers, the variable resistance material layers and the second electrode material layers along a first direction to form a plurality of spaced resistive random access memory cells. The resistive random access memory cell has an improved working window and improved storage density, thus has higher storage density and lower cost, as well as better performance. The manufacturing method of the resistive random access memory cell can improve the storage density and the working windowof a device. The electronic device has similar advantages.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a resistive random access memory storage unit, a manufacturing method thereof, and an electronic device. Background technique [0002] Resistive random access memory (RRAM) is a non-volatile memory (NVM) device that records and stores data information based on changes in resistance. In recent years, NVM devices have occupied an increasingly important position in the development of memory due to their high density, high speed and low power consumption. As a traditional NVM device, silicon-based flash memory has been widely used in removable memory applications. However, bottlenecks such as insufficient working life, insufficient reading and writing speed, high voltage in write operations and the inability to continue to shrink in size have restricted the further development of flash memory in many aspects. Instead, a variety of emerging devices have received widespread...

AI Technical Summary

Problems solved by technology

However, the current conductive bridge random access memory unit (cell) cannot realize multi-level well, which makes it difficult to increase the storage density of conductive bridge random access memory.

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