A Terahertz Third Harmonic Mixer Based on Fin Wire Structure
A sub-harmonic mixer and terahertz technology, applied in the direction of waveguide devices, circuits, electrical components, etc., to achieve high compression points, block fundamental wave signals, and reduce the effects of circuits
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Embodiment 1
[0036] Such as Figure 1-6 As shown, the present invention includes a terahertz third harmonic mixer based on a fin wire structure, including a metal cavity for placing a circuit, a substrate 12, a radio frequency input circuit and a local oscillator transition circuit, and the substrate 12 Located in the metal cavity, the radio frequency input circuit and the local oscillator transition circuit are located on the substrate 12, the radio frequency input circuit and the local oscillator transition circuit are connected through the local oscillator matching branch 5, and the radio frequency transition waveguide 1 is connected to the input end of the radio frequency input circuit , the RF input circuit includes a fin line 3 and a Schottky diode pair 4, the branch structure of the fin line 3 is directly connected to the metal cavity, the Schottky diode pair 4 is installed on the fin line 3, and the branch structure of the fin line 3 is also connected to the metal cavity The DC gro...
Embodiment 2
[0046] This embodiment is preferably as follows on the basis of Embodiment 1: the fin line 3 includes a main body part and a branch structure connected to each other, the main body part includes an input section and an output section connected in sequence, and the diameter of the end adjacent to the radio frequency transition waveguide 1 of the input section is larger than that on the input section The diameter of the adjacent output section, the two sides of the input section are concave arc lines, and the output section is an inverted T-shaped structure.
[0047] The local oscillator matching stub 5 includes a rectangular transmission line frame, a first parallel transmission line and a second parallel transmission line connected in sequence, the distance between the first parallel transmission lines is smaller than the distance between the second parallel transmission lines, the rectangular transmission line frame and the output section are located at the Schott On both side...
Embodiment 3
[0052] This embodiment is preferably as follows on the basis of the foregoing embodiments: the pair of Schottky diodes 4 is a pair of diodes connected in series in the same direction, and the pairs of diodes connected in series in the same direction are connected by a cross-shaped microstrip line. The diode is the core device of the mixer, and its performance is directly related to the level of frequency conversion loss and the working bandwidth of the mixer. In the terahertz frequency band, the wavelength is very small, and the package size of the diode will have a great impact on its performance. In this scheme, a diode with relatively small cascaded resistance and junction capacitance is selected.
[0053] The substrate 12 is a 50um quartz substrate.
[0054] The intermediate frequency output port 8 is located on a base plate 11, and the base plate 11 includes two interconnected square plates of different sizes. The arrangement of the square board facilitates the connectio...
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