Preparation method and application of a nano-gap controllable silicon-based array
A nano-gap and array technology, applied in the field of nano-gap array materials, can solve the problems of complex preparation methods, small construction area, and poor uniformity, and achieve the effect of simple process, large construction area, and good uniformity
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preparation example Construction
[0029] Such as Figure 4 As shown, a method for preparing a nano-gap controllable silicon-based array comprises the following steps:
[0030] Step A, preparing closely arranged single-layer polystyrene colloidal crystal arrays on the silicon substrate, thereby obtaining a single-layer polystyrene colloidal crystal array on the silicon substrate.
[0031] Step B, using reactive ion etching to etch the single-layer polystyrene colloidal crystal array on the silicon wafer base, and removing the single-layer polystyrene colloidal crystal array on the silicon wafer base after the etching is completed, to obtain Tapered silicon-based arrays.
[0032] Step C, using the conical silicon-based array as a template, depositing a layer of gold film with a thickness of 10-50 nm on the surface of the template by physical deposition, and depositing gold nanospheres on the top of the conical silicon-based array, by Controlling the deposition time adjusts the distance between the gold nanosph...
Embodiment approach
[0034] (1) The preparation of a tightly arranged single-layer polystyrene colloidal crystal array on a silicon substrate comprises the following steps:
[0035] Step A1, put the silicon wafer base into acetone, ethanol, the first mixed solution, and deionized water in sequence for ultrasonic cleaning, then dry the cleaned silicon wafer base, and then place it in an ultraviolet ozone cleaner for 10 days of irradiation. ~40min to obtain a silicon substrate with a hydrophilic surface. Wherein, the first mixed solution is formed by mixing concentrated sulfuric acid with a mass concentration of 1.84 g / ml and hydrogen peroxide with a mass concentration of 1.1 g / ml according to a volume ratio of 3:1.
[0036] Step A2, put the silicon chip substrate with hydrophilic surface into polystyrene colloidal ball ethanol diluent, and use the air-liquid interface self-assembly method to prepare a tightly arranged single-layer polystyrene layer on the silicon chip substrate Colloidal Crystal Arr...
Embodiment 1
[0047] Such as Figure 4 As shown, a method for preparing a nano-gap controllable silicon-based array may specifically include the following steps:
[0048] Step a1, put the silicon chip substrate into acetone, ethanol, and the first mixed solution in turn (the first mixed solution is composed of concentrated sulfuric acid with a mass concentration of 1.84g / ml and hydrogen peroxide with a mass concentration of 1.1g / ml according to the volume ratio of 3 : 1 mixed), ultrasonically cleaned in deionized water, and then dried on the cleaned silicon substrate, and then placed in an ultraviolet ozone cleaning machine for 10-40 minutes of irradiation to obtain a silicon wafer with a hydrophilic surface base.
[0049] Step b1, take the polystyrene colloidal sphere suspension (2.5wt%) that the polystyrene colloidal sphere diameter is 120nm, and mix with ethanol equal volume, carry out 10~30min ultrasonic oscillation treatment again, thus make the homogeneously dispersed polystyrene Et...
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