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Low-angle offset light filter based on boron-doped silane and preparing method of low-angle offset light filter

A technology of boron doping and silicon hydride, which is applied in the field of optical filters, can solve the problem of large angular shift of the center wavelength of optical filters, etc., and achieve the effects of small passband bandwidth, improved signal-to-noise ratio, and large field of view

Pending Publication Date: 2018-07-27
HUBEI W OLF PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problem that the central wavelength of the filter in the prior art is relatively large, the present invention provides a low-angle-shift filter based on boron-doped hydrogenated silicon and its preparation method. The equivalent refractive index can be Reach above 3.0, so that under the light incident angle of 30°, the central wavelength shift can be reduced to within 12nm, even down to 8nm

Method used

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  • Low-angle offset light filter based on boron-doped silane and preparing method of low-angle offset light filter
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preparation example Construction

[0040] A method for preparing a low-angle shift optical filter based on boron-doped silicon hydride, comprising the following steps:

[0041] Step A, preparing the first coating layer

[0042] (A1) Preparation of boron-doped hydrogenated silicon layer

[0043] There are mainly two ways:

[0044] Approach 1: In the magnetron sputtering equipment, the silicon target is used as the sputtering target for sputtering, and argon, hydrogen and boron-containing gas are introduced, and the boron-containing gas is mixed with argon and hydrogen, and both argon and hydrogen are high Pure gases, boron-containing gases including BH 4 , B 2 h 6 As well as other boron-containing compounds, a boron-doped silicon hydride layer is plated on one side of the substrate 1 or on the opposite two sides by magnetron sputtering, wherein the concentration of the boron-containing gas is 0.0001ppm to 10000ppm, preferably, The concentration of the boron-containing gas is 0.1 ppm-1000 ppm, more preferabl...

Embodiment 1

[0061] Such as Figure 1-2 As shown, the low-angle shift filter based on boron-doped hydrogenated silicon includes a glass substrate 1, a first coating layer 2 and a second coating layer 3, and the substrate 1 is arranged on the first coating layer 2 and the second coating layer Between the layers 3, the first coating layer 2 is prepared with alternating boron-doped silicon hydride and silicon dioxide as the coating material, and the second coating layer 3 is prepared with alternating boron-doped silicon hydride and silicon dioxide as the coating material As a high refractive index material, boron-doped silicon hydride has a refractive index between 3.0 and 4.0, an extinction coefficient between 0.01 and 0.00001, and silicon dioxide (SiO 2 ) as a low refractive index material reduces the central wavelength angle shift of the filter, wherein the first coating layer 2 is sequentially deposited from the inside to the outside by a total of 36 layers of boron-doped hydrogenated sil...

example 2

[0073] Step A, preparing the first coating layer

[0074] (A1) Preparation of boron-doped hydrogenated silicon layer

[0075] DC magnetron sputtering is adopted, the sputtering target uses high-purity silicon target, and B 2 h 6 Gas, mixture of hydrogen and argon, B 2 h 6 The gas concentration is 130ppm, a boron-doped hydrogenated silicon layer is formed on one side of the substrate 1, the sputtering power is 8kW, and the power pulse frequency is 130kHz.

[0076] (A2) Preparation of silicon dioxide layer

[0077] When preparing a low-refractive-index silicon dioxide layer, a high-purity silicon target is used as a sputtering target, and oxygen gas is introduced during sputtering to form silicon oxide, which is sputtered onto the boron-doped hydrogenated silicon layer in step (A1), and then sequentially Step (A1) and step (A2) are repeated to prepare the first coating layer 2 .

[0078] The rest are the same as embodiment 1.

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Abstract

The invention discloses a low-angle offset light filter based on boron-doped silane and a preparing method of the low-angle offset light filter. The low-angle offset light filter comprises a substrate, a first coating layer and a second coating layer, wherein the substrate is arranged between the first coating layer and the second coating layer, a boron-doped silane layer and a silicon dioxide layer are alternately deposited in the first coating layer from inside to outside in sequence, the boron-doped silane layer is arranged at the innermost layer of the first coating layer, the silicon dioxide layer is arranged at the outermost layer of the first coating layer, a boron-doped silane layer and a silicon dioxide layer are alternately deposited in the second coating layer from inside to outside in sequence, the boron-doped silane layer is arranged at the innermost layer of the second coating layer, the silicon dioxide layer is arranged at the outermost layer of the second coating layer.By means of the low-angle offset light filter based on boron-doped silane and the preparing method of the low-angle offset light filter, under a large incident angle, the wavelength drift amount of the light filter is lowered, and the center wavelength angle offset of the light filter is reduced within the range of 12 nm; under the same spectral bandwidth, a large field of view can be achieved; under the same field angle, the low-angle offset light filter has a smaller passband width, the signal-to-noise ratio of a near-infrared imaging system is increased, and the manufacturing cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of optical filters, in particular to a boron-doped silicon hydride-based low-angle offset optical filter and a preparation method thereof. Background technique [0002] At present, in the near-infrared imaging systems used in gesture recognition, face recognition, 3D structured light, and lidar, it is generally necessary to use a band-pass narrow-band filter with a center wavelength of 800nm ​​to 1000nm to filter out visible light and other unnecessary near-infrared Infrared light usually adopts a narrow-band filter of traditional optical materials. The high-refractive-index material of the narrow-band filter in the prior art adopts TiO2, Ta2O5, Nb2O5, etc., and the low-refractive index material adopts SiO2, etc. The disadvantage is: equivalent refraction The ratio is only about 2.0, resulting in a wavelength shift of about 30nm at a light incident angle of 30°, resulting in a narrow field of view range, or ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/28C23C14/35C23C14/10C23C14/06
CPCG02B5/285C23C14/06C23C14/10C23C14/35
Inventor 杨根
Owner HUBEI W OLF PHOTOELECTRIC TECH CO LTD