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Infrared light source material and preparation method thereof

A technology of infrared light source and laser, which is applied in the field of infrared light source, can solve the problems of high mechanical strength, high resistivity, and low high-temperature radiation intensity, achieve high strength and thermal conductivity, solve the effects of difficult processing, and high infrared emissivity

Active Publication Date: 2018-08-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the nickel-chromium wire is easy to oxidize at high temperature, the radiation power consumption is large, and the life of the light source is short; while the infrared laser is easy to modulate to a high frequency, its wavelength is selective, and its manufacturing cost is high. In addition, it needs low temperature refrigeration, which limits its use. Practical application; Nernst light source is a hollow rod or solid rod structure sintered from a mixture of zirconia, yttrium oxide, and thorium oxide. Platinum wires are wound at both ends as electrodes, and the emitted light intensity is strong, but the mechanical strength is poor. , it needs to be preheated before use, and the operation is inconvenient, which limits its scope of use
The thermal radiation of the SiC infrared light source emits a near-black body wide-spectrum infrared light, which has high operating temperature, high mechanical strength, and long service life. However, there are still some shortcomings in the process of preparation and use, such as high temperature radiation due to high resistivity. Low strength, high hardness and difficult to process

Method used

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  • Infrared light source material and preparation method thereof
  • Infrared light source material and preparation method thereof
  • Infrared light source material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] SiC (75wt%), AlN (5wt%) and MoSi 2 (20 wt%) 100 g in total, 1 g of phenolic resin, 200 g of SiC balls as the ball milling medium, and mixed for 24 hours. Then dry and sieve, the obtained powder is molded on a flatbed machine under 5MPa pressure, and then isostatically pressed under 200MPa pressure. After debonding, it was sintered under normal pressure argon atmosphere, the sintering temperature was 1900°C, and the sintering time was 2 hours. The obtained SiC-based composite ceramic material had a bending strength of 130MPa and a thermal conductivity of 42W m -1 ·K -1 . The obtained SiC-based multiphase ceramic material was processed into a Φ12 disc with a thickness of 2mm, coated with silver paste electrodes evenly on both sides, and then placed in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by a Keithley 2450 multi-channel test system, and their resistivity was 110Ω·cm. The thickness of the obtained SiC-based composite ceram...

Embodiment 2

[0041] SiC (65wt%), AlN (5wt%) and MoSi 2 (30wt%) 100g in total, 1g of phenolic resin, 200g of SiC balls as the ball milling medium, and mixed for 24h. Then dry and sieve, the obtained powder is molded on a flatbed machine under 100MPa pressure, and then isostatically pressed under 150MPa pressure. After debonding, it was sintered under normal pressure argon atmosphere, the sintering temperature was 2000°C, and the sintering time was 1 hour. The obtained SiC-based composite ceramic material had a bending strength of 140MPa and a thermal conductivity of 40W m -1 ·K -1 . The obtained SiC-based multiphase ceramic material was processed into a Φ12 disc with a thickness of 2mm, coated with silver paste electrodes evenly on both sides, and then placed in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by a Keithley (Keithley) 2450 multi-channel test system, and their resistivity was 24Ω·cm. The thickness of the obtained SiC-based composite cer...

Embodiment 3

[0043] SiC (55wt%), AlN (5wt%) and MoSi 2 (40wt%) 100g in total, 1g of phenolic resin, 200g of SiC balls as the ball milling medium, and mixed for 24h. Then dry and sieve, the obtained powder is molded on a flatbed machine under 5MPa pressure, and then isostatically pressed under 200MPa pressure. After debonding, it was sintered under normal pressure argon atmosphere, the sintering temperature was 1900°C, and the sintering time was 1 hour. The obtained SiC-based composite ceramic material had a bending strength of 181MPa and a thermal conductivity of 44W m -1 ·K -1 . The obtained SiC-based multiphase ceramic material was processed into a Φ12 disc with a thickness of 2mm, coated with silver paste electrodes evenly on both sides, and then placed in a muffle furnace at 750°C for 10min. The obtained electronic components were tested by a Keithley (Keithley) 2450 multi-channel test system, and their resistivity was 12Ω·cm. The thickness of the obtained SiC-based composite ceram...

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Abstract

The invention provides an infrared light source material and a preparation method thereof. The infrared light source material comprises the following components: 54-79wt% of SiC matrix, 1-6wt% of AlNand 20-40wt% of MoSi2 second phase material, wherein the sum of the contents of the components is 100wt%; preferably, the infrared light source material comprises the following components: 55-75wt% ofSiC matrix, 5wt% of AlN and 20-40wt% of MoSi2 second phase material, wherein the sum of the contents of the components is 100wt%.

Description

technical field [0001] The invention relates to an infrared light source material and a preparation method thereof, belonging to the field of infrared light sources. Background technique [0002] With the rapid development of optoelectronic technology, infrared technology has been widely used in information technology and communication, national defense industry, aerospace, environmental monitoring, medical care and other fields. As the most critical part of infrared technology, infrared light source has become one of the focuses of infrared research. [0003] At present, the infrared light sources widely used in various instruments mainly include metal filaments (usually nickel-chromium wires), infrared lasers, Nernst light sources and silicon carbide (SiC) light sources. Among them, the nickel-chromium wire is easy to oxidize at high temperature, the radiation power consumption is large, and the life of the light source is short; while the infrared laser is easy to modula...

Claims

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Application Information

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IPC IPC(8): C04B35/565
CPCC04B35/565C04B2235/3865C04B2235/3891C04B2235/96C04B2235/9607C04B2235/9646
Inventor 陈健郑嘉棋黄政仁朱云洲管晶裴兵兵袁明孙安乐
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI