Method for preparing porous nano-copper structure

A technology of nano-copper and copper target, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc. It can solve the problems that metal copper is easy to be oxidized, and the research on decomposition products is less in-depth and detailed. , to avoid oxidation

Active Publication Date: 2018-08-17
HANGZHOU DIANZI UNIVERSTIY INFORMATION ENG SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The metal copper decomposed by electron beam or laser beam exposure is easy to be oxidized, so the current research on the decomposition products mainly focuses on whether the composition of the product is copper metal, and there are few in-depth and detailed studies on the decomposition products.

Method used

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  • Method for preparing porous nano-copper structure
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  • Method for preparing porous nano-copper structure

Examples

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Effect test

Embodiment 1

[0051] The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 40 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 20:1; turn on the radio frequency source, preheat for 5 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 50W unti...

Embodiment 2

[0053] The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 30 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 10:1; turn on the radio frequency source, preheat for 10 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 150W un...

Embodiment 3

[0055] The present invention prepares Cu on Si substrate by magnetron sputtering 3 N thin film, using SEM to expose the sample to an electron beam, finally forming a nanoporous copper structure, thereby completing the preparation of the SERS substrate. Firstly, the substrate used for depositing samples was ultrasonically cleaned with detergent, acetone, absolute alcohol and deionized water for 15 minutes, and then the substrate was placed on the sample holder of the magnetron sputtering equipment, and the sample holder was parallel to the target surface And the distance is 55mm, when the background pressure in the vacuum chamber is lower than 6×10 －6 At mbar, feed a mixed gas with a flow rate of 40 sccm into the vacuum chamber, and the flow ratio of the mixed gas nitrogen and argon is 5:1; turn on the radio frequency source, preheat for 8 minutes, turn on the radio frequency, and increase the radio frequency power to pre-sputtering Power, the pre-sputtering power is 100W unti...

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Abstract

The invention discloses a method for preparing a porous nano-copper structure. The method comprises the following steps: firstly washing an Si substrate of a deposition sample, and placing the substrate on a sample frame, wherein the sample frame is parallel to a target surface and 55 mm apart from the target surface; while a background air pressure in a vacuum chamber is lower than 6x10-6 mbar, introducing a mixed gas, thereby sputtering a copper target; after the sputter coating, taking out a Cu3N film sample and placing in an SEM sample chamber, vacuumizing, selecting an electron beam lithography mode, regulating the electron beam focusing, controlling a beam spot of an electron beam to be about 1 microns, and performing the electron beam lithography on a Cu3N film selected area; finally, starting an SEM scanning mode, performing the SEM imaging on an exposure area, according to an SEM scanning image result, regulating exposure parameters, until the expected porous nano-copper structure occurs. The method is capable of effectively forming the expected porous nano-copper structure. The porous nano-copper structure has the coarse surface in nano-scale, and has the possibility forgenerating a 'hotspot'.

Description

technical field [0001] The invention belongs to the field of semiconductor film preparation, in particular to a method for preparing a porous nano-copper structure. Background technique [0002] Cuprous nitride (Cu) with anti-ReO3 structure and low decomposition temperature 3 N) Semiconductor materials have very bright application prospects in optical information storage and large-scale integrated circuits. Recently, it has been reported that this material can also be used in spintronic devices, solar cells, fuel cells, magnetic tunnel junctions and other fields, so this system has attracted wide attention internationally. [0003] Cu 3 The stability of N is very poor, and the decomposition temperature is between 100-470°C. After a short-term exposure to electron beams or laser beams, Cu3N semiconductor films will decompose rapidly and locally due to thermal effects, leaving a metal line or forming a series of metal points. , it is the poor thermal stability that has brou...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/58B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C23C14/0036C23C14/0641C23C14/35C23C14/5846
Inventor 杜允俞优姝
Owner HANGZHOU DIANZI UNIVERSTIY INFORMATION ENG SCHOOL
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