Tungsten processing slurry with catalyst

A technology of carrier and compound, applied in the direction of polishing composition containing abrasive, water-based dispersant, other chemical processes, etc., to achieve the effect of excellent surface morphology

Active Publication Date: 2018-08-31
CMC MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Protrusions can cause defective products made from processed substrates and, if present, may require additional processing steps to remove

Method used

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  • Tungsten processing slurry with catalyst
  • Tungsten processing slurry with catalyst
  • Tungsten processing slurry with catalyst

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0101] The oxidizing agent can be added, if desired, at any time during preparation of the polishing composition or prior to use in CMP processing. For example, a polishing composition without an oxidizing agent can be prepared and shipped or stored prior to use without the addition of an oxidizing agent. The oxidizing agent can be added shortly before the CMP composition is used in the CMP process (eg, within about 1 minute, or within about 10 minutes, or within about 1 hour, or within about 1 day, or within about 1 week of the CMP operation). The polishing composition can also be prepared by mixing the components just prior to contacting the substrate surface (eg, on the polishing pad) during the CMP operation.

[0102] Can be used as a single catalyst containing charged colloidal silica particles, a catalyst (eg, an iron-containing catalyst), a phosphorus-containing zwitterionic compound, an optional inhibitor, an optional oxidizing agent, an optional biocide, water, etc. ...

Embodiment 1

[0112] This example demonstrates that compositions containing phosphorous-containing ligands of the type described herein (P-compounds) perform better in slurries than otherwise identical slurries containing phosphorous-containing ligands of the type known in the art. Advantages in terms of stability. The compositions are set forth in Table 1. Silica-A is a charged colloidal silica particle with a secondary particle size of about 55 nm and a charge of about 25 mV. From the particle size data presented in Table 2 it is evident that the inventive slurry with alendronic acid (no particle growth observed) was as good as an otherwise identical slurry with phosphonic acid (Dequest 2010) (particle size diameter has almost doubled) compared with excellent stability.

[0113] Table 1. Slurry Composition

[0114]

[0115] Abr. = abrasive; cat. = iron nitrate nonahydrate; MA = malonic acid; surfactant (N,N,N',N',N'-pentamethyl-N-tallow-1,3 - propane diammonium dichloride).

[011...

Embodiment 2

[0120] This example teaches the advantages of the example formulations as described in tungsten etching. The slurry formulations are set forth in Tables 3 and 4. The corresponding tungsten etch rates (45°C) are provided in Tables 5 and 6. It is evident from the examples that the example compositions (Inv.) as described can have significantly lower tungsten static etch rates than the comparative (Comp.) compositions. For example, Inventive Paste 3-B has a static etch rate of 20% or less of Comparative Paste 3-A, while Inventive Paste 3-C has only the observed static etch rate of Comparative Paste 3-B 70% of the etch rate. In formulations without abrasives (Table 4), the inventive slurries also had significantly lower static etch rates compared to the control. For example, Inventive Composition 4B has a static etch rate of less than 1% of Comparative 4A, while Inventive Composition 4C has a static etch rate of less than 25% of Comparative 4A.

[0121] Table 3. Formulations w...

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Abstract

Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Description

technical field [0001] The present invention relates to compositions (eg, slurries) suitable for use in methods of chemical mechanical processing (eg, polishing or planarizing) the surface of tungsten-containing substrates, the slurries containing metal cation catalysts. Background technique [0002] Methods, materials and equipment suitable for chemical mechanical processing (CMP), including methods of polishing or planarizing substrates, are highly variable and can be used to process a wide range of substrates with different surfaces and end uses. Substrates processed by CMP methods include optical products, semiconductor substrates, and other microelectronic device substrates at any of various stages of manufacture. A wide range of CMP apparatuses, slurries, polishing pads and methods are well known, while new products are continuously being developed. Various liquid compositions, also known as polishing slurries, CMP slurries, and CMP compositions, are designed to proce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02
CPCH01L21/31053C09G1/02H01L21/3212C09K3/14C09K3/1409C09K3/1454C09K13/06C09G1/04C09K13/00
Inventor K.P.多克里黄禾琳M.卡恩斯G.惠特纳
Owner CMC MATERIALS INC
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