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Method for preparing an AlN nano-pattern template on the basis of Ni metal self-assembly

A technology of metal self-assembly and nano-patterning, applied in the direction of nanotechnology, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as high cost, time-consuming, complex process, etc., to improve photoelectric response and gain, and promote horizontal Effect of epitaxial growth and improvement of material quality

Inactive Publication Date: 2018-09-11
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is complex and expensive to prepare templates, which is not conducive to industrial production
Another nano-patterning method is the electron beam exposure method. The electron beam exposure lithography is used to transfer the pattern for subsequent etching. The electron beam exposure itself is time-consuming and expensive.
These methods prepare periodic regular patterns. Compared with the Ni metal self-assembly method, in addition to high cost and cumbersome process, it is impossible to selectively avoid dislocations at the surface stress release.
The use of Ni metal self-assembly to prepare patterns has been used in LED and other fields, but there is no report on the preparation of AlN nano-pattern epitaxial templates, and the selective etching of dislocations after Ni metal self-assembly annealing is also one of the research innovations of the present invention one

Method used

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  • Method for preparing an AlN nano-pattern template on the basis of Ni metal self-assembly
  • Method for preparing an AlN nano-pattern template on the basis of Ni metal self-assembly
  • Method for preparing an AlN nano-pattern template on the basis of Ni metal self-assembly

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Embodiment 1

[0030] A method for preparing an AlN nano-patterned substrate based on a Ni metal self-assembly method, comprising the following steps:

[0031] (1) Treatment of the AlN substrate template: Put the 3 μm AlN / sapphire composite substrate into deionized water, ultrasonically clean it at room temperature for 10 minutes, remove the dirt particles on the surface of the AlN substrate template, and then pass through acetone, ethanol, and deionized water for 10 minutes each Ultrasonic washing once, after removing surface organic matter, blow dry with high-purity dry nitrogen;

[0032] (2) Preparation of Ni metal thin film: at a temperature of 500°C and a vacuum of 5×10 -7Under the high vacuum condition of Pa, a layer of Ni metal film with a thickness of 5 nm is evaporated on the substrate processed in step (1) by electron beam, and the evaporated metal is Ni simple substance;

[0033] (3) Preparation of Ni nano-island mask: In a nitrogen atmosphere at a temperature of 800 °C, the meta...

Embodiment 2

[0038] The method for preparing AlN nano-patterned substrate based on Ni metal self-assembly method includes the following steps:

[0039] (1) Treatment of AlN substrate template: put the 3 μm AlN / sapphire composite substrate into deionized water, ultrasonically clean it for 10 minutes at room temperature, remove the sticky particles on the surface of the AlN substrate template, and then pass through acetone, ethanol and deionized water respectively. Each ultrasonic washing was performed for 10 minutes, and the surface organics were removed, and then dried with high-purity dry nitrogen;

[0040] (2) Preparation of Ni metal thin film: at a temperature of 500 °C and a vacuum of 5 × 10 -7 Under the high vacuum condition of Pa, a layer of Ni metal film with a thickness of 10 nm is evaporated on the substrate processed in step (1) by electron beam, and the evaporated metal is Ni simple substance;

[0041] (3) Preparation of Ni nano-island mask: In a nitrogen atmosphere at a temper...

Embodiment 3

[0045] The method for preparing AlN nano-patterned substrate based on Ni metal self-assembly method includes the following steps:

[0046] (1) Treatment of AlN substrate template: put the 3 μm AlN / sapphire composite substrate into deionized water, ultrasonically clean it for 10 minutes at room temperature, remove the sticky particles on the surface of the AlN substrate template, and then pass through acetone, ethanol and deionized water respectively. Each ultrasonic washing was performed for 10 minutes, and the surface organics were removed, and then dried with high-purity dry nitrogen;

[0047] (2) Preparation of Ni metal thin film: under high vacuum conditions at a temperature of 500 °C, the vacuum degree is 5 × 10 -7 Pa, on the substrate processed by step (1), a layer of 5nm thick Ni metal film is evaporated by electron beam;

[0048] (3) Preparation of Ni nano-island mask: at a temperature of 800 °C in a nitrogen atmosphere, the Ni metal film obtained in step (2) was subj...

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Abstract

The invention discloses a method for preparing an AlN nano-pattern template on the basis of Ni metal self-assembly. The method comprises the following steps: (1) cleaning the surface of an AlN substrate template; (2) making a layer of an Ni metal film through evaporation; (3) placing a sample in the step (2) at the nitrogen atmosphere of 750-900 DEG C to conduct rapid thermal annealing treatment,and enabling the Ni metal film to form Ni nanoparticles through a self-assembly effect; (4) etching the sample that has undergone annealing in the step (3) by means of inductively coupled plasmas, andforming an AlN nano-pattern template; and (5) removing residual Ni metal on the AlN nano-pattern template. The method for preparing an AlN nano-pattern template can filter dislocations on an AlN surface and release stress between an AlN substrate and a subsequent epitaxial AlGaN. The prepared AlN nano-pattern template can promote transverse epitaxial growth of device film materials and facilitategrowth of high Al-component AlGaN films with high quality and low defect. According to the invention, the photoelectric response and the gain of an AlGaN photodetector are expected to be greatly improved.

Description

technical field [0001] The patent of the present invention relates to the field of semiconductor optoelectronic materials, in particular to a method for preparing AlN nano-pattern templates based on Ni metal self-assembly. Background technique [0002] Ultraviolet detection is another new detection technology developed rapidly after laser detection and infrared detection technology. Ultraviolet detection technology mostly detects the sun-blind band and deep ultraviolet band in the near-Earth atmosphere. Among them, ultraviolet detectors working in the sun-blind spectral region have very important applications, and have great demands in the fields of ultraviolet early warning, ultraviolet communication, ultraviolet imaging-assisted navigation, and radar detection. Among many ultraviolet detection applications, the development of missile warning based on sun-blind ultraviolet band is the most successful. Due to the urgent demand for optoelectronic devices in the solar-blind ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/00H01L31/0236H01L31/18B82Y40/00
CPCH01L31/02366H01L31/1856H01L33/0075H01L33/22B82Y40/00Y02P70/50
Inventor 陈敦军蔡青陈鹏张荣郑有炓
Owner NANJING UNIV
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