TiZrVHf quaternary getter thin film and preparation method thereof
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A getter thin film and thin film technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve the problems of small conductance, unsatisfactory particle accelerator, high secondary electron emission coefficient, etc., and achieve long-term Effects of service life, reduction of secondary electron emission coefficient, and improvement of operating efficiency
Active Publication Date: 2018-09-14
INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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Due to the slender diameter of the particle accelerator vacuum pipe, the conductance is too small, and the secondary electron emission coefficient of the i
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Embodiment 1
[0034] Embodiment 1, the preparation method of TiZrVHf quaternary getter film of the present invention comprises the following steps:
[0035] 1) pretreat the substrate pipeline;
[0036] 2) The pretreated substrate pipe is subjected to pulsed magnetron sputtering, the deposition temperature is 90°C, the Kr flow rate is 2sccm, the sputtering power is 60W, the gas pressure is 1Pa, and the deposition time is 50min, so that Ti, Zr, V, and Hf are formed on the substrate pipe. Dense layer of four elements;
[0037] 3) The substrate obtained in step 2) is subjected to DC magnetron sputtering, the deposition temperature is 150°C, the Kr flow rate is 2sccm, the sputtering power is 100W, the gas pressure is 1Pa, and the deposition time is 300min, so that Ti, Zr, V, and Hf are formed on the substrate pipeline. Columnar layers of four elements.
Embodiment 2
[0038]Embodiment 2, the preparation method of TiZrVHf quaternary getter film of the present invention, comprises the following steps:
[0039] 1) Pretreat the substrate pipeline;
[0040] 2) The pretreated substrate pipe is subjected to pulsed magnetron sputtering, the deposition temperature is 85°C, the Kr flow rate is 4 sccm, the sputtering power is 80W, the gas pressure is 1.2Pa, and the deposition time is 70min, so that Ti, Zr, V, Dense layer of four elements of Hf;
[0041] 3) The substrate obtained in step 2) is subjected to DC magnetron sputtering, the deposition temperature is 200°C, the Kr flow rate is 8sccm, the sputtering power is 80W, the gas pressure is 1.5Pa, and the deposition time is 600min, so that Ti, Zr, V, A columnar layer of the four elements Hf.
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Abstract
The invention discloses a TiZrVHf quaternary getter thin film. The TiZrVHf quaternary getter thin film comprises four elements, namely, Ti, Zr, V and Hf, and the atomic number ratio is (0.9-1.1): (0.9-1.1): (0.9-1.1): (0.9-1.1): (0.9-1.1). The TiZrVHf quaternary getter thin film comprises a compact layer and a prismatic layer, wherein the compact layer and the prismatic layer sequentially grow inthe inner wall of a substrate pipe. The compact layer is a thin film, has a flat surface, and has no obvious grain structure under an electron microscope. The prismatic layer is a thin film has a rough surface, and has a obvious grain structure under the electron microscope. The prismatic layer has a large surface area and a large suction area, so that the suction rate per unit area of the substrate pipeline increases significantly. The TiZrVHf quaternary getter thin film belongs to the technical field of getter thin films. The TiZrVHf quaternary getter film can be activated at low temperature, strong adhesion and long service life are achieved, the vacuum degree of a particle accelerator is effectively improved, and the secondary electron emission coefficient is reduced.
Description
technical field [0001] The invention belongs to the technical field of getter films, and specifically refers to a TiZrVHf quaternary getter film and a preparation method thereof. Background technique [0002] The getter material can absorb the residual active gas in the vacuum device or the active gas released during the use of the device through physical or chemical adsorption, improve the ultimate vacuum level of the vacuum system, avoid the decline of the vacuum quality with the service life, and reduce the activity. Vibration damping of components, reduction of heat dissipation in the inner cavity, avoiding pollution or quality changes caused by the reaction of gas and precision components, to achieve the purpose of maintaining the vacuum quality and ideal working environment of vacuum equipment or sealed devices. Getter materials are mainly divided into evaporable getter and non-evaporable getter or NEG. The former needs to be evaporated and deposited on the inner wall...
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IPC IPC(8): C23C14/35C23C14/16C23C14/02
CPCC23C14/02C23C14/165C23C14/3485C23C14/35
Inventor 马永胜
Owner INST OF HIGH ENERGY PHYSICS CHINESE ACADEMY OF SCI
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