TiZrVHf quaternary getter thin film and preparation method thereof

Abstract

The invention discloses a TiZrVHf quaternary getter thin film. The TiZrVHf quaternary getter thin film comprises four elements, namely, Ti, Zr, V and Hf, and the atomic number ratio is (0.9-1.1): (0.9-1.1): (0.9-1.1): (0.9-1.1): (0.9-1.1). The TiZrVHf quaternary getter thin film comprises a compact layer and a prismatic layer, wherein the compact layer and the prismatic layer sequentially grow inthe inner wall of a substrate pipe. The compact layer is a thin film, has a flat surface, and has no obvious grain structure under an electron microscope. The prismatic layer is a thin film has a rough surface, and has a obvious grain structure under the electron microscope. The prismatic layer has a large surface area and a large suction area, so that the suction rate per unit area of the substrate pipeline increases significantly. The TiZrVHf quaternary getter thin film belongs to the technical field of getter thin films. The TiZrVHf quaternary getter film can be activated at low temperature, strong adhesion and long service life are achieved, the vacuum degree of a particle accelerator is effectively improved, and the secondary electron emission coefficient is reduced.

Description

technical field [0001] The invention belongs to the technical field of getter films, and specifically refers to a TiZrVHf quaternary getter film and a preparation method thereof. Background technique [0002] The getter material can absorb the residual active gas in the vacuum device or the active gas released during the use of the device through physical or chemical adsorption, improve the ultimate vacuum level of the vacuum system, avoid the decline of the vacuum quality with the service life, and reduce the activity. Vibration damping of components, reduction of heat dissipation in the inner cavity, avoiding pollution or quality changes caused by the reaction of gas and precision components, to achieve the purpose of maintaining the vacuum quality and ideal working environment of vacuum equipment or sealed devices. Getter materials are mainly divided into evaporable getter and non-evaporable getter or NEG. The former needs to be evaporated and deposited on the inner wall...

AI Technical Summary

Problems solved by technology

Due to the slender diameter of the particle accelerator vacuum pipe, the conductance is too small, and the secondary electron emission coefficient of the inner wall of the traditional stainless steel, oxygen-free copper, and aluminum pipes is also high, so it cannot meet the needs of the particle accelerator.

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