Method for preparing temperature-sensitive film with heat insulation buffer layer structure

A heat-sensitive film and buffer layer technology, applied in the direction of resistors with negative temperature coefficient, resistance manufacturing, non-adjustable metal resistors, etc., can solve the problem of fast response temperature sensing, increasing the heat capacity of sensitive units, Issues such as increased response time of thin film materials

Active Publication Date: 2018-09-18
中科传感(佛山)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a thermally sensitive film is deposited directly on the surface of an ordinary Si substrate, the high thermal conductivity of the Si substrate (156W / cm·℃) will cause heat conduction between the thermally sensitive film and the substrate, which will virtually increase the size of the sensitive unit. The heat capacity of the thin film material increases the response time, so it is difficult to meet the demand for fast response temperature sensing in the field of extreme temperature monitoring

Method used

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  • Method for preparing temperature-sensitive film with heat insulation buffer layer structure
  • Method for preparing temperature-sensitive film with heat insulation buffer layer structure
  • Method for preparing temperature-sensitive film with heat insulation buffer layer structure

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Effect test

Embodiment 1

[0018] a. Preparation of thermal insulation buffer layer: firstly, immerse the purchased silicon substrate 1 in acetone, absolute ethanol, and deionized water, and perform ultrasonic washing for 3 times, each washing time is 5 minutes, take out the silicon substrate 1, and use high-purity Dry the surface of the silicon substrate 1 with nitrogen gas, then make masks of various shapes on the surface of the silicon substrate 1, put the silicon substrate 1 into the cavity of the electron beam evaporation equipment, and place the mask hollowed out on the surface of the silicon substrate 1 Growing the silicon material 2 to form a silicon column, by adjusting the voltage 1, the evaporation time is 5 minutes, controlling the height of the silicon material 2 of the silicon column to be 10nm, and utilizing the air stored in the hole 3 in the gap of the silicon column to realize thermal insulation;

[0019] b. Preparation of silicon dioxide insulating layer: put the silicon substrate 1 pr...

Embodiment 2

[0022] a. Preparation of thermal insulation buffer layer: firstly, immerse the purchased silicon substrate 1 in acetone, absolute ethanol, and deionized water, and perform ultrasonic washing 3 times for 10 minutes each time. Dry the surface of the silicon substrate 1 with nitrogen gas, then make masks of various shapes on the surface of the silicon substrate 1, put the silicon substrate 1 into the cavity of the electron beam evaporation equipment, and place the mask hollowed out on the surface of the silicon substrate 1 Growing silicon material 2 to form silicon balls, controlling the height of the silicon material 2 of the silicon balls to 200 μm by adjusting the voltage of 2 kV and evaporation time of 60 minutes, using the air stored in the holes 3 in the gaps of the silicon balls to realize thermal insulation;

[0023] b. Preparation of silicon dioxide insulating layer: put the silicon substrate 1 prepared in step a into a thermal oxidation furnace at a temperature of 1050°C...

Embodiment 3

[0026] a. Preparation of the thermal insulation buffer layer: firstly, the purchased silicon substrate 1 was immersed in acetone, absolute ethanol, and deionized water in sequence, and ultrasonically washed 3 times, each washing time was 8 minutes, the silicon substrate 1 was taken out, and the Dry the surface of the silicon substrate 1 with nitrogen gas, then make masks of various shapes on the surface of the silicon substrate 1, put the silicon substrate 1 into the cavity of the electron beam evaporation equipment, and place the mask hollowed out on the surface of the silicon substrate 1 Growing silicon material 2 to form silicon rods, controlling the height of the silicon material 2 of the silicon rods to be 150 μm by adjusting the voltage to 1.5kV and evaporating for 20 minutes, and utilizing the air stored in the holes 3 in the gaps of the silicon rods to realize thermal insulation;

[0027] b. Preparation of silicon dioxide insulating layer: put the silicon substrate 1 pr...

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Abstract

The invention discloses a method for preparing a temperature-sensitive film with a heat insulation buffer layer structure. The method comprises the following steps: preparing a heat insulation bufferlayer on the surface of a silicon substrate; preparing a silicon dioxide insulation layer on the surface of the heat insulation buffer layer; and preparing a temperature-sensitive film on the surfaceof the silicon dioxide insulation layer to obtain the temperature-sensitive film with the heat insulation buffer layer structure. The heat insulation buffer layer is a porous silicon-based structure with different structure characteristics, formed by growing silicon pillars, silicon spheres or silicon rods on the surface of a silicon wafer, and air stored in pores is sued to achieve heat insulation between the temperature-sensitive film and the silicon substrate, so the whole heat capacity and the heat dissipation of the temperature-sensitive film are reduced, and the response time of a thermistor is shortened, thereby the temperature-sensitive film can be developed into a miniature thermistor with fast response characteristics, very suitable for the field of fast response temperature monitoring. .

Description

technical field [0001] The invention relates to a method for preparing a heat-sensitive film with a heat-insulating buffer layer structure. Background technique [0002] Negative temperature coefficient (NTC) thermistor is a common temperature measurement and control element. It has the characteristics of high temperature measurement accuracy, high sensitivity, good reliability, low cost and long working life. It is widely used in aviation, marine and civil fields. Applications. With the continuous advancement of the electronic industry and information technology, modern electronic information systems are developing towards miniaturization and monolithic integration. Compared with bulk ceramic thermistors, thin-film NTC thermistors are easier to achieve the goals of miniaturization, fast response, and integration of temperature sensors, and have broad application prospects in the fields of semiconductors, integrated circuits, and micro-nano devices. [0003] Since the heat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/04H01C17/075H01C17/08
CPCH01C7/041H01C17/075H01C17/08
Inventor 孔雯雯王倩常爱民姚金城
Owner 中科传感(佛山)科技有限公司
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